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Two-Dimensional Carrier-Carrier Screening in a Quantum Well

Description: The behavior of carrier-carrier screening is investigated in a GaAs-GaAIAs quantum well structure by measuring the band-to-band polarization dephasing with femtosecond photon echoes. The variation of the electron-hole polarization dephasing time with the carrier concentration reveals the two-dimensional character of the short range screening between the interacting carriers.
Date: July 1, 1991
Creator: Bigot, J.-Y.; Portella, M.T.; Schoenlein, R.W.; Cunningham, J.E. & Shank, C.V.
Partner: UNT Libraries Government Documents Department

Non-free-electron momentum- and thickness-dependent evolution ofquantum well states in the Cu/Co/Cu(001) system

Description: We present systematic k{sub {parallel}}-dependent measurements of the Fermi surface and underlying band structure of quantum well states in Cu/Co/Cu(001). Compared to bands from normal emission, we find a complicated evolution of ''split'' QW states as a function of the thicknesses of both the copper overlayer and the cobalt barrier layer. Self-consistent calculations show that the penetration of the quantum well states into the cobalt barrier layer is significant and leads to the observed very non-free-electron behavior of these states.
Date: May 21, 2005
Creator: Rotenberg, Eli; Wu, Y.Z.; An, Joonhee M.; Van Hove, Michel A.; Canning, Andrew; Wang, Lin-Wang et al.
Partner: UNT Libraries Government Documents Department

Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices

Description: In this work, ordered all-binary short-period strained InAs/GaAs superlattice quantum wells were studied as an alternative to strained ternary alloy InGaAs/GaAs quantum wells. InGaAs quantum wells QWs have been of great interest in recent years due to the great potential applications of these materials in future generations of electronic and optoelectronic devices. The all binary structures are expected to have all the advantages of their ternary counterparts, plus several additional benefits related to growth, to the elimination of alloy disorder scattering and to the presence of a higher average indium content.
Date: December 1993
Creator: Huang, Xuren
Partner: UNT Libraries

Surface Plasmon Based Nanophotonic Optical Emitters

Description: Group- III nitride based semiconductors have emerged as the leading material for short wavelength optoelectronic devices. The InGaN alloy system forms a continuous and direct bandgap semiconductor spanning ultraviolet (UV) to blue/green wavelengths. An ideal and highly efficient light-emitting device can be designed by enhancing the spontaneous emission rate. This thesis deals with the design and fabrication of a visible light-emitting device using GaN/InGaN single quantum well (SQW) system with enhanced spontaneous emission. To increase the emission efficiency, layers of different metals, usually noble metals like silver, gold and aluminum are deposited on GaN/InGaN SQWs using metal evaporator. Surface characterization of metal-coated GaN/InGaN SQW samples was carried out using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Photoluminescence is used as a tool for optical characterization to study the enhancement in the light emitting structures. This thesis also compares characteristics of different metals on GaN/InGaN SQW system thus allowing selection of the most appropriate material for a particular application. It was found out that photons from the light emitter couple more to the surface plasmons if the bandgap of former is close to the surface plasmon resonant energy of particular metal. Absorption of light due to gold reduces the effective mean path of light emitted from the light emitter and hence quenches the quantum well emission peak compared to the uncoated sample.
Access: This item is restricted to the UNT Community Members at a UNT Libraries Location.
Date: December 2005
Creator: Vemuri, Padma Rekha
Partner: UNT Libraries

Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

Description: Semiconductor heterostructures incorporating multiple degrees of spatial confinement have recently attracted substantial interest for photonic applications. One example is the quantum dots-in-a-well (DWELL) heterostructure, consisting of zero-dimensional quantum dots embedded in a two-dimensional quantum well and surrounded by three-dimensional bulk material. This structure offers several advantages over conventional photonic devices while providing a model system for the study of light-matter interactions across multiple spatial dimensions. Here, we use ultrafast differential transmission spectroscopy2 to temporally and spectrally resolve density-dependent carrier dynamics in a DWELL heterostructure. We observe excitation-dependent shifts of the quantum dot energy levels at low densities, while at high densities we observe an anomalous induced absorption at the quantum dot excited state that is correlated to quantum well population dynamics. These studies of density-dependent light-matter interactions across multiple coupled spatial dimensions provide clues to the underlying physics governing quantum dot properties, with important implications for DWELL-based photonic devices.
Date: January 1, 2009
Creator: Prasankumar, Rohit P; Taylor, Antoinette J; Chow, W W; Attaluri, R S & Shenoi, R
Partner: UNT Libraries Government Documents Department

Rapidly Reconfigurable All-Optical Universal Logic Gates

Description: We present designs and simulations for a highly cascadable, rapidly reconfigurable, all-optical, universal logic gate. We will discuss the gate's expected performance, e.g. speed, fanout, and contrast ratio, as a function of the device layout and biasing conditions. The gate is a three terminal on-chip device that consists of: (1) the input optical port, (2) the gate selection port, and (3) the output optical port. The device can be built monolithically using a standard multiple quantum well graded index separate confinement heterostructure laser configuration. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog electrical or optical signal at the gate selection port. Specifically, the same gate can be selected to execute one of the 2 basic unary operations (NOT or COPY), or one of the 6 binary operations (OR, XOR, AND, NOR, XNOR, or NAND), or one of the many logic operations involving more than two inputs. The speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal modulation speed of a laser, which can be on the order of tens of GHz. The reprogrammable nature of the universal gate offers maximum flexibility and interchangeability for the end user since the entire application of a photonic integrated circuit built from cascaded universal logic gates can be changed simply by adjusting the gate selection port signals.
Date: June 21, 2006
Creator: Goddard, L L; Kallman, J S & Bond, T C
Partner: UNT Libraries Government Documents Department

Filling-factor dependence of magneto-luminescence in IT-VT QWs with 2DEG

Description: Photoluminescence spectra of modulation-doped quantum well structures based on IT--VT semiconductors (CdTe/CdMgTe and ZnSe/ZnBeMgSe) were studied in high magnetic fields it the range of 2D electron concentrations of (1 --5) x 1011 cm2. The following peculiarities were found at low magnetic fields: (i) linear increase of the photoluminescence energy with increasing magnetic fields, (ii) jumps in this dependence at integer filling-factors, (iii) periodical changing of Zeeman splitting. The observed behavior are interpreted in a frame of a model which takes into account combined exciton electron recombination processes in the presence of magnetic fields.
Date: January 1, 2003
Creator: Gurevich, A. S.; Astakhov, G. V.; Suris, R. A. (Robert A.); Kochereshko, V. P.; Yakovlev, D. R.; Ossau, W. et al.
Partner: UNT Libraries Government Documents Department

Nonlinear Light Generation from Optical Cavities and Antennae

Description: Semiconductor based micro- and nano-structures grown in a systematic and controlled way using selective area growth are emerging as a promising route toward devices for integrated optical circuitry in optoelectronics and photonics field. This dissertation focuses on the experimental investigation of the nonlinear optical effects in selectively grown gallium nitride micro-pyramids that act as optical cavities, zinc oxide submicron rods and indium gallium nitride multiple quantum well core shell submicron tubes on the apex of GaN micro pyramids that act as optical antennae. Localized spatial excitation of these low dimensional semiconductor structures was optimized for nonlinear optical light (NLO) generation due to second harmonic generation (SHG) and multi-photon luminescence (MPL). The evolution of both processes are mapped along the symmetric axis of the individual structures for multiple fundamental input frequencies of light. Effects such as cavity formation of generated light, electron-hole plasma generation and coherent emission are observed. The efficiency and tunability of the frequency conversion that can be achieved in the individual structures of various geometries are estimated. By controlling the local excitation cross-section within the structures along with modulation of optical excitation intensity, the nonlinear optical process generated in these structures can be manipulated to generate coherent light in the UV-Blue region via SHG process or green emission via MPL process. The results show that these unique structures hold the potential to convert red input pulsed light into blue output pulsed light which is highly directional.
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Date: May 2017
Creator: Butler, Sween J
Partner: UNT Libraries

Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Description: In this work I investigate the expulsion of carriers from nanostructures using the double-barrier quantum well (DBQW) as an example and discuss manifestations of this effect in the spectrum of the DBQW in absence of bias, and in the tunneling current in presence of bias. Assuming equality of the Fermi energy in all regions of the considered system, I compute the relative density of carriers localized in the DBQW and conclude that a fraction of carriers is expelled from this nanostructure.
Date: March 1992
Creator: Chyla, Wojciech Tadeusz
Partner: UNT Libraries

Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs heterostructures

Description: Using ion channeling techniques, we investigate the lattice locations of Mn in Ga{sub 1-x}Mn{sub x}As quantum wells between Be-doped Ga{sub 1-y}Al{sub y}As barriers. The earlier results showed that the Curie temperature T{sub C} depends on the growth sequence of the epitaxial layers. A lower T{sub C} was found in heterostructures in which the Ga{sub 1-x}Mn{sub x}As layer is grown after the modulation-doped barrier. Here we provide direct evidence that this reduction in T{sub C} is directly correlated with an increased formation of magnetically inactive Mn interstitials. The formation of interstitials is induced by a shift of the Fermi energy as a result of the transfer of holes from the barrier to the quantum well during the growth.
Date: January 30, 2004
Creator: Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Lim, W.L.; Liu, X.; Dobrowolska, M. et al.
Partner: UNT Libraries Government Documents Department

Non-diffusive spin dynamics in a two-dimensional electron gas

Description: We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs/GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves in the wavevector range from zero to 6 x 10{sup 4} cm{sup -1}. We find that the spin polarization lifetime is maximal at nonzero wavevector, in contrast with expectation based on ordinary spin diffusion, but in quantitative agreement with recent theories that treat diffusion in the presence of spin-orbit coupling.
Date: April 28, 2010
Creator: Weber, C.P.
Partner: UNT Libraries Government Documents Department

Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

Description: We present the results of a three year LDRD project that has focused on overcoming major materials roadblocks to achieving AlGaN-based deep-UV laser diodes. We describe our growth approach to achieving AlGaN templates with greater than ten times reduction of threading dislocations which resulted in greater than seven times enhancement of AlGaN quantum well photoluminescence and 15 times increase in electroluminescence from LED test structures. We describe the application of deep-level optical spectroscopy to AlGaN epilayers to quantify deep level energies and densities and further correlate defect properties with AlGaN luminescence efficiency. We further review our development of p-type short period superlattice structures as an approach to mitigate the high acceptor activation energies in AlGaN alloys. Finally, we describe our laser diode fabrication process, highlighting the development of highly vertical and smooth etched laser facets, as well as characterization of resulting laser heterostructures.
Date: December 1, 2011
Creator: Armstrong, Andrew M.; Miller, Mary A.; Crawford, Mary Hagerott; Alessi, Leonard J.; Smith, Michael L.; Henry, Tanya A. et al.
Partner: UNT Libraries Government Documents Department

Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

Description: In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.
Date: January 3, 2007
Creator: Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S et al.
Partner: UNT Libraries Government Documents Department

Quantum Well Thermoelectrics for Converting Waste Heat to Electricity

Description: Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type and N-type Si/Si{sub 80}Ge{sub 20} films with encouraging results. These films are fabricated on Si substrates and are being developed for low as well as high temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved over 4000 hours at T{sub H} of 300 C and T{sub C} of 50 C with little or no degradation. Emphasis is now shifting towards couple and module design and fabrication, especially low resistance joining between N and P legs. These modules can be used in future energy conversion systems as well as for air conditioning.
Date: April 1, 2007
Creator: Ghamaty, Saeid
Partner: UNT Libraries Government Documents Department

Singlet and triplet states of trions in ZuSe-based quantum wells probed by magnetic fields to 50 Tesla

Description: Singlet and triplet states of positively (X{sup +}) and negatively (X{sup -}) charged excitons in ZnSe-based quantum wells have been studied by means of photoluminescence in pulsed magnetic fields up to 50 T. The binding energy of the X{sup -} singlet state shows a monotonic increase with magnetic field with a tendency to saturation, while that of the X{sup +} slightly decreases. The triplet X{sup +} and X{sup -} states, being unbound at zero magnetic field, noticeably increase their binding energy in high magnetic fields. The experimental evidence for the interaction between the triplet and singlet states of lTions leading to their anticrossing in magnetic fields has been found.
Date: January 1, 2002
Creator: Astakhov, G. V.; Yakovlev, D. R.; Crooker, S. A. (Scott A.); Barrick, T. (Todd); Dzyubenko, A. B.; Sander, Thomas et al.
Partner: UNT Libraries Government Documents Department


Description: Spin-polarized photoelectron spectroscopy has developed into a versatile tool for the study of surface and thin film magnetism. In this chapter, we examine the methodology of the technique and its recent application to a number of different problems. We first examine the photoemission process itself followed by a detailed review of spin-polarization measurement techniques and the related experimental requirements. We review studies of spin polarized surface states, interface states and quantum well states followed by studies of the technologically important oxide systems including half-metallic transition metal oxides, ferromagnet/oxide interfaces and the antiferromagnetic cuprates that exhibit high Tc Superconductivity. We also discuss the application of high-resolution photoemission with spin resolving capabilities to the study of spin dependent self energy effects.
Date: November 1, 2006
Partner: UNT Libraries Government Documents Department

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

Description: Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.
Date: March 19, 2010
Creator: Yang, Wen; Chang, Kai & Zhang, Shou-Cheng
Partner: UNT Libraries Government Documents Department

Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient-grating spectroscopy

Description: We use phase-resolved transient grating spectroscopy to measure the drift and diffusion of electron-hole density waves in a semiconductor quantum well. The unique aspects of this optical probe allow us to determine the frictional force between a two-dimensional Fermi liquid of electrons and a dilute gas of holes. Knowledge of electron-hole friction enables prediction of ambipolar dynamics in high-mobility electron systems.
Date: April 26, 2011
Creator: Yang, Luyi; Koralek, J. D.; Orenstein, J.; Tibbetts, D. R.; Reno, J. L. & Lilly, M. P.
Partner: UNT Libraries Government Documents Department

Effect of GaN template layer strain on the growth of InxGa1-xN/GaN MQW light emitting diodes

Description: GaN template layer strain effects were investigated on the growth of InGaN/GaN LED devices. Seven period InGaN/GaN multiple quantum well structures were deposited on 5{micro}m and 15{micro}m GaN template layers. It was found that the electroluminescence emission of the 15{micro}m device was red-shifted by approximately 132meV. Triple-axis X-Ray Diffraction and Cross-Sectional Transmission Electron Microscopy show that the 15{micro}m templay layer device was virtually unstrained while the 5{micro}m layer experienced tensile strain. Dynamic Secondary Ion Mass Spectrometry depth profiles show that the 15{micro}m template layer device had an average indium concentration of 11% higher than that of the 5{micro}m template layer device even though the structures were deposited during the same growth run. It was also found that the 15{micro}m layer device had a higher growth rate than the 5{micro}m template layer device. This difference in indium concentration and growth rate was due to changes in thermodynamic limitations caused by strain differences in the template layers.
Date: January 15, 2004
Creator: Johnson, M.C.; Bourret-Courchesne, E.D.; Wu, J.; Liliental-Weber, Z.; Zakharov, D.N.; Jorgenson, R.J. et al.
Partner: UNT Libraries Government Documents Department

Time, Energy, and Spatially Resolved TEM Investigations of Defectsin InGaN

Description: A novel sample preparation technique is reported to fabricate electron transparent samples from devices utilizing a FIB process with a successive wet etching step. The high quality of the obtained samples allows for band gap--and chemical composition measurements of In{sub x}Ga{sub 1-x}N quantum wells where electron beam induced damage can be controlled and shown to be negligible. The results reveal indium enrichment in nanoclusters and defects that cause fluctuations of the band gap energy and can be measured by low loss Electron Energy Spectroscopy with nm resolution. Comparing our time, energy, and spatially resolved measurements of band gap energies, chemical composition, and their related fluctuations with literature data, we find quantitative agreement if the band gap energy of InN is 1.5-2 eV.
Date: October 1, 2005
Creator: Jinschek, J. R. & Kisielowski, C.
Partner: UNT Libraries Government Documents Department

Non-diffusive spin dynamics in a two-dimensional electrongas

Description: We describe measurements of spin dynamics in thetwo-dimensional electron gas in GaAs/GaAlAs quantum wells. Opticaltechniques, including transient spin-grating spectroscopy, are used toprobe the relaxation rates of spin polarization waves in the wavevectorrange from zero to 6E4 cm-1. We find that the spin polarization lifetimeis maximal at nonzero wavevector, in contrast with expectation based onordinary spin diffusion, but in quantitative agreement with recenttheories that treat diffusion in the presence of spin-orbitcoupling.
Date: December 12, 2006
Creator: Weber, Christopher P.; Orenstein, Joseph; Bernevig, B. Andrei; Zhang, Shou-Cheng; Stephens, Jason & Awschalom, David D.
Partner: UNT Libraries Government Documents Department

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes

Description: GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.
Date: November 23, 2004
Creator: Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY. & Kisielowski, Christian
Partner: UNT Libraries Government Documents Department