Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions
Description:
A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over i…
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Date:
May 2006
Creator:
Roth, Elaine Grannan
Partner:
UNT Libraries