3 Matching Results

Search Results

Advanced search parameters have been applied.
in subjects: "Transient Photocapacitance"  
Results: 1 - 3
open access

Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007

Description: This report summarizes the development and evaluation of higher-bandgap absorbers in the CIS alloy system. The major effort focused on exploring suitable absorbers with significant sulfur alloying in collaboration with Shafarman's group at the Institute of Energy Conversion. Three series of samples were examined; first, a series of quaternary CuIn(SeS)2-based devices without Ga; second, a series of devices with pentenary Cu(InGa)(SeS)2 absorbers in which the Se-to-S and In-to-Ga ratios were cho… more
Date: August 1, 2008
Creator: Cohen, J. D.
Partner: UNT Libraries Government Documents Department
open access

Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005

Description: A major effort during this subcontract period has been to evaluate the microcrystalline Si material under development at United Solar Ovonics Corporation (USOC). This material is actually a hydrogenated nanocrystalline form of Si and it will be denoted in this report as nc-Si:H. Second, we continued our studies of the BP Solar high-growth samples. Third, we evaluated amorphous silicon-germanium alloys produced by the hot-wire chemical vapor deposition growth process. This method holds some pote… more
Date: November 1, 2005
Creator: Cohen, J. D.
Partner: UNT Libraries Government Documents Department
open access

Novel Capacitance Measurements in Copper Indium Gallium Diselenide Alloys: Final Subcontract Report, 1 July 1999--31 August 2003

Description: This subcontract report describes the University of Oregon's objectives to measure the electronic properties of the copper indium/gallium diselenide alloys using several well-developed capacitance techniques appropriate for probing materials with a continuous distribution of semiconducting gap electronic energy states. We applied a new synthetic method to the production of CIGS alloys, namely, the modulated elemental reactant method. To form CIGS by this method, alternating layers of Cu:In:Se a… more
Date: May 1, 2004
Creator: Johnson, D. C.
Partner: UNT Libraries Government Documents Department
Back to Top of Screen