3 Matching Results

Search Results

Advanced search parameters have been applied.

LaVo4: Eu Phosphor Films with Enhanced Eu Solubility

Description: Eu doped rare-earth orthovanadates are known to be good red phosphor materials. In particular, LaVO{sub 4}:Eu is a promising candidate due to the low Eu-site point symmetry, and thus high dipole transition probability within Judd-Ofelt theory. However, the low solubility limit (< 3 mol %) of Eu in LaVO{sub 4} prevents its efficient use as a phosphor. We present optical evidence of enhanced Eu solubility as high as 10 mol % in LaVO{sub 4}:Eu thin films grown by pulsed laser deposition and postannealing. The photoluminescent intensity exceeded that of YVO{sub 4}:Eu thin films when excited below the host bandgap, indicating stronger direct emission of Eu in LaVO{sub 4}.
Date: August 11, 2011
Creator: Hwang, Harold
Partner: UNT Libraries Government Documents Department

Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

Description: We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film far below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO ...
Date: August 11, 2011
Creator: Bell, Christopher
Partner: UNT Libraries Government Documents Department

Enhancing the Electron Mobility via Delta-Doping in SrTiO3

Description: We fabricated high-mobility {delta}-doped structures in SrTiO{sub 3} thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO{sub 3}
Date: August 11, 2011
Creator: Kozuka, Y.
Partner: UNT Libraries Government Documents Department