678 Matching Results

Search Results

Advanced search parameters have been applied.
in subjects: "Switches"  
Results: 1 - 24 next
open access

High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch.

Description: Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's over a period of 1.5 ms. For the second test the MEMS devices were assembled in a gun-fired penetrator and shot into a cement target at the Army Waterways Experiment Station in Vicksburg Mississippi. This test resulted in a peak acceleration of 7191 g's for a duration of 5.5 ms… more
Date: October 1, 2005
Creator: Baker, Michael Sean & Pohl, Kenneth Roy
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

LDRD 102610 final report new processes for innovative microsystems engineering with predictive simulation.

Description: This LDRD Final report describes work that Stephen W. Thomas performed in 2006. The initial problem was to develop a modeling, simulation, and optimization strategy for the design of a high speed microsystem switch. The challenge was to model the right phenomena at the right level of fidelity, and capture the right design parameters. This effort focused on the design context, in contrast to other Sandia efforts focus on high-fidelity assessment. This report contains the initial proposal and the… more
Date: August 1, 2007
Creator: Mattsson, Ann Elisabet; Mitchell, Scott A. & Thomas, Stephen W.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Final report task order number B239641 between the Regents of the University of California and Institute of Experimental Physics task 2: Switch development.

Description: The LLNL project of the pulsed power system for the National Ignition Facility requires a switch with the following operational parameters: peak current of 400 kA, the transferred charge of 150 C, operating voltage of 25 kV, and reliable operating life of 10,000 shots. A review of high-power switches is given with detailed studies on vacuum switches and semiconductor switches.
Date: December 31, 1994
Creator: Galakhov, I. V.; Gruzin, I. A.; Gudov, S. N.; Kirillov, G. A.; Logutenko, S. L.; Murugov, V. M. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

High-speed, sub-pull-in voltage MEMS switching.

Description: We have proposed and demonstrated MEMS switching devices that take advantage of the dynamic behavior of the MEMS devices to provide lower voltage actuation and higher switching speeds. We have explored the theory behind these switching techniques and have demonstrated these techniques in a range of devices including MEMS micromirror devices and in-plane parallel plate MEMS switches. In both devices we have demonstrated switching speeds under one microsecond which has essentially been a firm lim… more
Date: January 1, 2008
Creator: Spahn, Olga Blum; Brewer, Steven; Olsson, Roy H.; Bogart, Gregory R.; Luck, David L.; Watts, Michael R. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

A low power ultra-fast current transient measuring device.

Description: We have studied the feasibility of an innovative device to sample 1ns low-power single current transients with a time resolution better than 10 ps. The new concept explored here is to close photoconductive semiconductor switches (PCSS) with a Laser for a period of 10 ps. The PCSSs are in a series along a Transmission Line (TL). The transient propagates along the TL allowing one to carry out a spatially resolved sampling of charge at a fixed time instead of the usual timesampling of the current.… more
Date: October 1, 2004
Creator: Doyle, Barney Lee; Rossi, Paolo; Armendariz, Marcelino G.; Sullivan, John Patrick; Foltynowicz, Robert J. & Zutavern, Fred J.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Active RF Pulse Compression using Electrically Controlled Semiconductor Switches

Description: In this paper, we will present our recent results on the research of the ultra-fast high power RF switches based on silicon. We have developed a switch module at X-band which can use a silicon window as the switch. The switching is realized by generation of carriers in the bulk silicon. The carriers can be generated electrically or/and optically. The electrically controlled switches use PIN diodes to inject carrier. We have built the PIN diode switches at X-band, with <300ns switching time. … more
Date: January 30, 2008
Creator: Guo, J. & Tantawi, S. G.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

Description: Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and m… more
Date: December 18, 2013
Creator: Hirshfield, Jay L.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Si-based RF MEMS components.

Description: Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity si… more
Date: January 1, 2005
Creator: Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D. & Dyck, Christopher William
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Development of a high-explosive driven crowbar switch

Description: A compact explosively-driven, metal-to-metal contact, solid dielectric switch was developed for use as a low-resistance, <10- mu OMEGA , low- inductance, < 10-nH, crowbar switch. A l00-milligram high-explosive charge is used to extrude a 0.090-in. plate through 0.040-in. polyethylene and achieve a hard current contact with a 0.625-in.-diameter die plate. The closure time, from the signal, which initiates the charge, to beginning of current rise in the switch, is 11.0 mu sec plus or minus 0.3 mu… more
Date: January 1, 1973
Creator: Dike, R.S. & Kewish, R.W. Jr.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

High speed switching in gases

Description: A fast, efficient and reliable switch is the basic ingredient of a pulse power accelerator. Two switches have been proposed so far: the solid state switch, and the vacuum photodiode switch. The solid state version has been tested to some extent, albeit at low (few kilovolts) level, with risetime around 10 ps in the radial line transformer configuration. The vacuum photodiode is being investigated by Fisher and Rao at Brookhaven National Laboratory. Common to both switches is the need of a short… more
Date: February 1, 1989
Creator: Cassell, R.E. & Villa, F.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

New integrated polysilicon photoconductors for ultrafast measurements on silicon

Description: A fully-integrated silicon-optical-switch technology is reported that demonstrates one picosecond sampling aperture when excited by a femtosecond laser. Fabrication of the polycrystalline-silicon-switch structure is accomplished with standard-integrated-circuit processing techniques to insure full compatibility with standard-VLSI processes. Photoresist-masked ion-beam irradiation is used to generate trapping sites in the photoconductive layer and tailor the switch on-time. Limited optimization … more
Date: January 1, 1985
Creator: Bowman, D. R.; Hammond, R. B. & Dutton, R. W.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Wide Bandgap Extrinsic Photoconductive Switches

Description: Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single c… more
Date: January 17, 2012
Creator: Sullivan, J S
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries Government Documents Department
open access

6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

Description: Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse sw… more
Date: February 13, 2007
Creator: Sullivan, J S & Stanley, J R
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Steady State Properties of Lock-On Current Filaments in GaAs

Description: Collective impact ionization has been used to explain lock-on in semi-insulating GaAs under high-voltage bias. The authors have used this theory to study some of the steady state properties of lock-on current filaments. In steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-equilibrium Maxwell-Boltzmann distribution. In this report they examine the validity of this… more
Date: February 29, 2000
Creator: Kambour, K.; Kang, Samsoo; Myles, Charles W. & Hjalmarson, Harold P.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Fault tolerant issues in the BTeV trigger

Description: The BTeV trigger performs sophisticated computations using large ensembles of FPGAs, DSPs, and conventional microprocessors. This system will have between 5,000 and 10,000 computing elements and many networks and data switches. While much attention has been devoted to developing efficient algorithms, the need for fault-tolerant, fault-adaptive, and flexible techniques and software to manage this huge computing platform has been identified as one of the most challenging aspects of this project. … more
Date: December 3, 2002
Creator: al., Jeffrey A. Appel et
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Laser triggering of water switches in terrawatt-class pulse power accelerators.

Description: Focused Beams from high-power lasers have been used to command trigger gas switches in pulse power accelerators for more than two decades. This Laboratory-Directed Research and Development project was aimed at determining whether high power lasers could also command trigger water switches on high-power accelerators. In initial work, we determined that focused light from three harmonics of a small pulsed Nd:YAG laser at 1064 nm, 532 nm, and 355 nm could be used to form breakdown arcs in water, w… more
Date: December 1, 2005
Creator: Woodworth, Joseph Ray; Johnson, David Lee (Titan Pulse Sciences, San Leandro, CA); Wilkins, Frank (Bechtel Nevada, Las Vegas, NV); Van De Valde, David (EG&G Technical Services, Albuquerque, NM); Sarkisov, Gennady Sergeevich (Ktech Corporation, Albuquerque, NM); Zameroski, Nathan D. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Low inductance gas switching.

Description: The laser trigger switch (LTS) is a key component in ZR-type pulsed power systems. In ZR, the pulse rise time through the LTS is &gt; 200 ns and additional stages of pulse compression are required to achieve the desired &lt;100 ns rise time. The inductance of the LTS ({approx}500nH) in large part determines the energy transfer time through the switch and there is much to be gained in improving system performance and reducing system costs by reducing this inductance. The current path through the… more
Date: October 1, 2007
Creator: Chavez, Ray; Harjes, Henry Charles III; Wallace, Zachariah & Elizondo, Juan E.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
Back to Top of Screen