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Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs

Description: BC13, with addition of Nz, Ar or Hz, is found to provide smooth anisotropic pattern transfer in GaAs, GaN, GaP, GaSb and AIGriAs under Inductively Coupled Plasma conditions, Maxima in the etch rates for these materials are observed at 33% N2 or 87$'40 Hz (by flow) addition to BC13, whereas Ar addition does not show this behavior. Maximum etch rates are typically much higher for GaAs, Gap, GaSb and AIGaAs (-1,2 @rein) than for GaN (-0.3 ymu'min) due to the higher bond energies of the iatter. The rates decrease at higher pressure, saturate with source power (ion flux) and tend to show maxima with chuck power (ion energy). The etched surfaces remain stoichiometric over abroad range of plasma conditions.
Date: December 4, 1998
Creator: Abernathy, C.R,; Han, J.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Lee, J.W. et al.
Partner: UNT Libraries Government Documents Department

Structure, Stoichiometry and Stability in Magnetoplumbite and {beta}-Alumina Structured Type Ceramics. Final Report

Description: Work has been completed on the atomistic simulation of hexa-aluminate ceramics with the magnetoplumbite and beta-alumina type structures. In this report, three aspects of the work are highlighted. One is the simulation of surface structures. The second concerns details of the interstitially mechanisms observed in molecular dynamics simulations. The novel result here is the observation that the lattice ion always leaves its Beevers-Ross site before the aBR interstitial begins to move towards the lattice site. It is also found that, as expected, the interstitial mechanism is the most common mechanism in the heavily disordered nonstoichiometric structure, as well as in the stoichiometric material. Finally, the disposition of trivalent europium in the phosphor material BAM has been elucidated.
Date: March 1, 2004
Creator: Cormack, A. N.
Partner: UNT Libraries Government Documents Department

Passive Control of Particle Dispersion in a Particle-Laden Circular Jet Using Elliptic Co-Annular Flow: A Means for Improving Utilization and Emission Reductions in Pulverized Coal Burner

Description: A passive control technology utilizing elliptic co-flow to control the particle flinging and particle dispersion in a particle (coal)-laden flow was investigated using experimental and numerical techniques. Preferential concentration of particles occurs in particle-laden jets used in pulverized coal burner and causes uncontrollable NO{sub x} formation due to inhomogeneous local stoichiometry. This particular project was aimed at characterizing the near-field flow behavior of elliptic coaxial jets. The knowledge gained from the project will serve as the basis of further investigation on fluid-particle interactions in an asymmetric coaxial jet flow-field and thus is important to improve the design of pulverized coal burners where non-homogeneity of particle concentration causes increased NO{sub x} formation.
Date: June 1, 2003
Creator: Choudhuri, Ahsan R.
Partner: UNT Libraries Government Documents Department

The Resolution of Chiral, Tetrahedral M4L6 Metal-LigandHosts

Description: The supramolecular metal-ligand assemblies of M{sub 4}1{sub 6} stoichiometry are chiral (M = Ga{sup III}, Al{sup III}, In{sup III}, Fe{sup III}, Ti{sup IV}, or Ge{sup IV}, H{sub 4}1 = N,N'-bis(2,3-dihydroxybenzoyl)-1,5-diaminonaphthalene). The resolution process of {Delta}{Delta}{Delta}{Delta}- and {Lambda}{Lambda}{Lambda}{Lambda}-[M{sub 4}1{sub 6}]{sup 12-} by the chiral cation s-nicotinium (S-nic{sup +}) is described for the Ga{sup III}, Al{sup III}, and Fe{sup III} assemblies, and the resolution is shown to be proton dependent. From a methanol solution of M(acac){sub 3}, H{sub 4}1, S-nicI, and KOH, the {Delta}{Delta}{Delta}{Delta}-KH{sub 3}(S-nic){sub 7}[(S-nic) {contained_in}M{sub 4}1{sub 6}] complexes precipitate, and the {Lambda}{Lambda}{Lambda}{Lambda}-K{sub 6}(S-nic){sub 5}[(S-nic) {contained_in} M{sub 4}1{sub 6}] complexes subsequently can be isolated from the supernatant. Ion exchange enables the isolation of the (NEt{sub 4}{sup +}){sub 12}, (NMe{sub 4}{sup +}){sub 12} and K{sub 12}{sup +} salts of the resolved structures, which have been characterized by CD and NMR spectroscopies. Resolution can also be accomplished with one equivalent of NEt{sub 4}{sup +} blocking the cavity interior, demonstrating that external binding sites are responsible for the difference in S-nic{sup +} enantiomer interactions. Circular dichroism data demonstrate that the (NMe{sub 4}{sup +}){sub 12} and (NEt{sub 4}{sup +}){sub 12} salts of the resolved [Ga{sub 4}1{sub 6}]{sup 12-} and [Al{sub 4}1{sub 6}]{sup 12-} structures retain their chirality over extended periods of time (>20 d) at room temperature; heating the (NEt{sub 4}{sup +}){sub 12}[Ga{sub 4}1{sub 6}] assembly to 75 C also had no effect on its CD spectrum. Finally, experiments with the resolved K{sub 12}[Ga{sub 4}1{sub 6}] assemblies point to the role of a guest in stabilizing the resolved framework.
Date: August 28, 2007
Creator: Davis, Anna V.; Fiedler, Dorothea; Ziegler, Marco; Terpin,Andreas & Raymond, Kenneth N.
Partner: UNT Libraries Government Documents Department

Ytterbium divalency and lattice disorder in near-zero thermalexpansion YbGaGe

Description: While near-zero thermal expansion (NZTE) in YbGaGe is sensitive to stoichiometry and defect concentration, the NZTE mechanism remains elusive. We present x-ray absorption spectra that show unequivocally that Yb is nearly divalent in YbGaGe and the valence does not change with temperature or with 1% B or 5% C impurities, ruling out a valence-fluctuation mechanism. Moreover, substantial changes occur in the local structure around Yb with B and C inclusion. Together with inelastic neutron scattering measurements, these data indicate a strong tendency for the lattice to disorder, providing a possible explanation for NZTE in YbGaGe.
Date: May 8, 2006
Creator: Booth, C.H.; Christianson, A.D.; Lawrence, J.M.; Pham, L.; Lashley, J. & Drymiotis, F.R.
Partner: UNT Libraries Government Documents Department

X-ray Scattering Techniques for Characterization of Nanosystems in Lifescience

Description: The intent of this chapter is to provide the basics of using x-ray diffraction techniques in order to obtain information on the structure and morphology of the nanosystems, and also to point out some of its strengths and weaknesses when compare to other characterization techniques. X-ray scattering examines over a wide range of density domains from a tenth to a thousandth angstrom. Essentially, this covers a whole range of condensed matter, including the structure and morphology of nanosystems, particularly useful for examining nanostructures in lifescience. This range of domain size requires both the wide-angle x-ray scattering (WAXS) and small-angle (SAXS) x-ray scattering techniques. Roughly WAXS covers from 2 nm down, and SAXS covers from .5 nm to 100 nm and possibly 1,000 nm for a finely tuned instrument. Brief theoretical description of both WAXS and SAXS will be given in this chapter. WAXS, by itself is a powerful technique in providing information on the crystallographic structure or lack of structure, atomic positions and sizes in a unit cell, to some extend, chemical compositions and as well as chemical stoichiometry. Examples of such experiments will also be given. In order to be able to describe the technique of x-ray scattering, some historical and theoretical background will be given in the hope of making this subject interesting and simple.
Date: April 11, 2005
Creator: Saw, C K
Partner: UNT Libraries Government Documents Department


Description: Due to higher than expected hydrogen generation during the Tank 51-Sludge Batch 4 (SB4) qualification run, DWPF engineering requested the Savannah River National Laboratory (SRNL) to expand the ongoing catalytic hydrogen generation program. The work presented in this Technical Report was identified as part of SRNL/Liquid Waste Organization (LWO) meetings to define potential causes of catalytic hydrogen generation as well as from an external technical review panel commissioned to evaluate SRNL hydrogen related data and programs. New scope included improving the understanding of SRAT/SME process chemistry, particularly as it related to acid consumption and hydrogen generation. The expanded hydrogen program scope was covered under the technical task request (TTR): HLW-DWPF-TTR-2007-0016. A task technical and quality assurance plan (TT&QAP) was issued to cover focus areas raised in meetings with LWO plus a portion of the recommendations made by the review panel. A supporting analytical study plan was issued. It was also noted in the review of catalytic hydrogen generation that control of the DWPF acid stoichiometry was an important element in controlling hydrogen generation. A separate TTR was issued to investigate ways of improving the determination of the acid requirement during processing: HLWDWPF-TTR-0015. A separate TT&QAP was prepared for this task request. This report discusses some progress on this task related to developing alternative acid equations and to performing experimental work to supplement the existing database. Simulant preparation and preliminary flowsheet studies were already documented. The prior work produced a sufficient quantity of simulant for the hydrogen program and melter feed rheology testing. It also defined a suitable acid addition stoichiometry. The results presented in this report come from samples and process data obtained during sixteen 22-L SRAT/SME simulations that were performed in the second half of 2007 to produce eight SME products with frit 418 and a matching set of ...
Date: December 3, 2008
Creator: Koopman, D; David Best, D & Bradley Pickenheim, B
Partner: UNT Libraries Government Documents Department

Stoichiometry, spin fluctuations, and superconductivity in LaNiPO

Description: Superconductivity in LaNiPO is disrupted by small ({approx}5%) amounts of non-stoichiometry on the lanthanum site, even though the electronic contribution to the heat capacity increases with increasing non-stoichiometry. All samples also exhibit specific heat anomalies consistent with the presence of ferromagnetic spin fluctuations (T{sub sf}{approx} 14K). Comparison of layered nickel phosphide and nickel borocarbide superconductors reveals different structure-property correlations in the two families.
Date: January 1, 2009
Creator: Klimczuk, Tomasz; Mcqueen, Tyrel M; Williams, Anthony J; Huang, Qiang & Cava, Robert J
Partner: UNT Libraries Government Documents Department

Structure, chemistry, and properties of mineral nanoparticles

Description: Nanoparticle properties can depart markedly from their bulk analog materials, including large differences in chemical reactivity, molecular and electronic structure, and mechanical behavior. The greatest changes are expected at the smallest sizes, e.g. 10 nm and below, where surface effects are expected to dominate bonding, shape and energy considerations. The precise chemistry at nanoparticle interfaces can have a profound effect on structure, phase transformations, strain, and reactivity. Certain phases may exist only as nanoparticles, requiring transformations in chemistry, stoichiometry and structure with evolution to larger sizes. In general, mineralogical nanoparticles have been little studied.
Date: December 2, 2008
Creator: Waychunas, G.A.; Zhang, H. & Gilbert, B.
Partner: UNT Libraries Government Documents Department

Measurements of the Distribution of Solutes between Liquid Water and Steam

Description: Direct measurements of the concentration of solutes in both liquid and steam phases in equilibrium with each other have been made in a static mode utilizing a platinum-lined autoclave to a maximum of 350 deg C. Partitioning constants were derived from these measurements based on existing experimental or estimated values of the stoichiometric mean activity coefficients for the solutes in the liquid phase. Independent measurements of the conductance of some of the solutes in dilute aqueous solutions to 600 deg C and 300MPa were also made. The combined results are discussed in terms of a speciated model and the implications of these results to industrial and natural hydrothermal processes are presented. PARTITIONING CONSTANT, ION-ASSOCIATION, CONDUCTIVITY, SPECIATION, CORROSION.
Date: December 31, 1997
Creator: Palmer, D.A.; Simonson, J.M. & Ho, P.C.
Partner: UNT Libraries Government Documents Department

(Ba,Sr)TiO{sub 3} dielectrics: Relationship between bulk and thin film properties

Description: Thin films of complex perovskites have a number of potentially important applications. Of major scientific and practical concern is the scaling of properties as film dimensions are reduced. This paper describes a satisfactory relationship between bulk and thin film dielectric properties of (Ba,Sr)TiO{sub 3}. Relative contributions of strain, A:B cation stoichiometry, and interface are separated to explain temperature dependent dielectric behavior.
Date: December 22, 1999
Creator: Kingon, A. I.; Streiffer, S. K.; Parker, C. B. & Stemmer, S.
Partner: UNT Libraries Government Documents Department

The chemical vapor deposition of zirconium carbide onto ceramic substrates

Description: Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system.
Date: July 1, 1999
Creator: Glass, John A, Jr.; Palmisiano, Nick, Jr. & Welsh, R. Edward
Partner: UNT Libraries Government Documents Department

Twinning in Incommensurate and Commensurate Structures of ReSi{sub 2-x} Alloys

Description: ReSi{sub 2-x} is usually referred to as rhenium disilicide but it actually has a stoichiometry of ReSi{sub 1.75}. Also it is usually described as having the tetragonal MoSi{sub 2}C11{sub b} structure but in fact it exhibits a number of incommensurate and commensurate structures which are based on the C11{sub b} structure. Structure A has an incommensurate periodicity of 4.14a along the a axis. It has a small orthorhombic distortion (b/a {approximately}1.005) accompanied by twinning on the (110) plane and a small monoclinic distortion (b {approximately}90.2 {degree}) accompanied by twinning on the (001) plane. Structure B is also incommensurate but has a larger monoclinic angle of 107 {degree}; B appears to result from a shear transformation of A, giving rise to (001) twins. Prolonged annealing at high temperatures results in structure C which is commensurate and has planes parallel to, and exactly 4 times the spacing of, the (101) planes of the underlying C11{sub b} structure. Structure C is also twinned. The various structures are apparently caused by attempts to accommodate the Si structural vacancies. The relationship between these structures and the Nowotny chimney-ladder structures that have the general formula T{sub n}Si{sub 2n-m} and are based on the TiSi{sub 2} structure is discussed.
Date: February 1, 1999
Creator: Misra, A. & Mitchell, T.E.
Partner: UNT Libraries Government Documents Department

A Method to Improve Activation of Implanted Dopants in SiC

Description: Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) is achieved by using the highest possible processing temperature. This includes implantation at > 600 C followed by furnace annealing at temperatures as high as 1,750 C. Despite such aggressive and extreme processing, implantation suffers because of poor dopant activation, typically ranging between < 2%--50% with p-type dopants represented in the lower portion of this range and n-types in the upper. Additionally, high-temperature processing can led to several problems including changes in the stoichiometry and topography of the surface, as well as degradation of the electrical properties of devices. A novel approach for increasing activation of implanted dopants in SiC and lowering the activation temperature will be discussed. This approach utilizes the manipulation of the ion-induced damage to enhance activation of implanted dopants. It will be shown that nearly amorphous layers containing a small amount of residual crystallinity can be recrystallized at temperatures below 900 C with little residual damage. It will be shown that recrystallization traps a high fraction of the implanted dopant residing within the amorphous phase (prior to annealing) onto substitutional sites within the SiC lattice.
Date: January 16, 2001
Creator: Holland, O.W.
Partner: UNT Libraries Government Documents Department

AnGa{sub 2}O{sub 4} Thin-Film Phosphors Grown by Pulsed Laser Ablation

Description: The growth and properties of undoped and Mn-doped ZnGa{sub 2}O{sub 4} thin-film phosphors on (100) MgO and glass substrates using pulsed laser ablation were investigated. Blue-white and green emission were observed for as-deposited undoped and Mn-doped films, respectively. Luminescent properties as well as crystallinity were considerably affected by processing conditions and film stoichiometry. Films with enhanced luminescent characteristics were obtained on single crystal substrates without post-annealing.
Date: April 5, 1999
Creator: Lee, Y. E.; Rouleau, C. M.; Park, C. & Norton, D. P.
Partner: UNT Libraries Government Documents Department

Spectral hole burning studies of photosystem II

Description: Low temperature absorption and hole burning spectroscopies were applied to the D1-D2-cyt b{sub 559} and the CP47 and CP43 antenna protein complexes of Photosystem H from higher plants. Low temperature transient and persistent hole-burning data and theoretical calculations on the kinetics and temperature dependence of the P680 hole profile are presented and provide convincing support for the linker model. Implicit in the linker model is that the 684-nm-absorbing Chl a serve to shuttle energy from the proximal antenna complex to reaction center. The stoichiometry of isolated Photosystem H Reaction Center (PSII RC) in several different preparations is also discussed. The additional Chl a are due to 684-nm-absorbing Chl a, some contamination by the CP47 complex, and non-native Chl a absorbing near 670 nm. In the CP47 protein complex, attention is focused on the lower energy chlorophyll a Q{sub y}-states. High pressure hole-burning studies of PSII RC revealed for the first time a strong pressure effect on the primary electron transfer dynamics. The 4.2 K lifetime of P680*, the primary donor state, increases from 2.0 ps to 7.0 ps as pressure increases from 0.1 to 267 MPa. Importantly, this effect is irreversible (plastic) while the pressure induced effect on the low temperature absorption and non-line narrowed P680 hole spectra are reversible (elastic). Nonadiabatic rate expressions, which take into account the distribution of energy gap values, are used to estimate the linear pressure shift of the acceptor state energy for both the superexchange and two-step mechanisms for primary charge separation. It was found that the pressure dependence could be explained with a linear pressure shift of {approximately} 1 cm{sup -1}/MPa in magnitude for the acceptor state. The results point to the marriage of hole burning and high pressures as having considerable potential for the study of primary transport dynamics in reaction centers ...
Date: November 1, 1995
Creator: Chang, H.C.
Partner: UNT Libraries Government Documents Department

Stoichiometry and Deposition Temperature Dependence of the Microstructural and Electrical Properties of Barium Strontium Titanate Thin Films

Description: Barium Strontium Titanate (BST) was deposited on Pt/ZrO2 / SiO2/Si substrates using liquid source metal organic chemical vapor deposition. A stoichiometry series was deposited with various GrII/Ti ratios (0.658 to 1.022) and a temperature series was deposited at 550 to 700°C. The thin films were characterized using transmission electron microscopy. Both series of samples contained cubic perovskite BST and an amorphous phase. The grain size increased and the volume fraction of amorphous phase decreased with increasing deposition temperature. The electrical and microstructural properties improved as the GrII/Ti ratio approached 1 and deteriorated beyond 1. This research demonstrates that BST thin films are a strong candidate for future MOS transistor gate insulator applications.
Date: May 1998
Creator: Pena, Piedad
Partner: UNT Libraries

Deposition and Characterization of Highly Oriented Mg(3)(VO(4))(2) Thin Film Catalyst

Description: Magnesium vanadates are potentially important catalytic materials for the conversion of alkanes to alkenes via oxidative dehydrogenation. However, little is known about the active sites at which the catalytic reactions take place. It may be possible to obtain a significant increase in the catalytic efficiency if the effects of certain material properties on the surface reactions could be quantified and optimized through the use of appropriate preparation techniques. Given that surface reactivity is often dependent upon surface structure and that the atomic level structure of the active sites in these catalysts is virtually unknown, we desire thin film samples consisting of a single magnesium vanadate phase and a well defined crystallographic orientation in order to reduce complexity and simplify the study of active sites. We report on the use of reactive RF sputter deposition to fabricate very highly oriented, stoichiometric Mg{sub 3}(VO{sub 4}){sub 2} thin films for use in these surface analysis studies. Deposition of samples onto amorphous substrates resulted in very poor crystallinity. However, deposition of Mg{sub 3}(VO{sub 4}){sub 2} onto well-oriented, lattice-matched thin film ''seed'' layers such as Ti(0001), Au(111), or Pt(111) resulted in very strong preferential (042) crystallographic orientation (pseudo-hexagonal oxygen planes parallel to the substrate). This strong preferential growth of the Mg{sub 3}VO{sub 4}{sub 2} suggests epitaxial (single-crystal) growth of this mixed metal oxide on the underlying metal seed layer. The effects of the seed layer material, deposition temperature, and post-deposition reactive treatments on thin film properties such as stoichiometry, crystallographic orientation, and chemical interactions will be discussed.
Date: October 22, 1999
Partner: UNT Libraries Government Documents Department

Regulation of Vacuolar pH in Citrus limon

Description: The primary objective of this grant was to characterize the vacuolar V-ATPase of lemon fruits. Lemon fruit vacuoles have an internal pH of about 2.5. Since a typical plant vacuole has a luminal pH of around 5.5, the lemon fruit V-APTase must have special properties which allow it to acidify the lumen to such a low pH: (1) it might have a different structure; (2) it might have a different H{sup +}/ATP stoichiometry; and (3) it might be regulated differently. During the course of the investigations (which began in 1996) they characterized these aspects of the V-ATPases of both lemon fruits and lime fruits. They examined lime fruits because of the availability of both acidic limes with a low vacuolar pH and sweet limes, which have a much higher vacuolar pH. The existence of two types of lime fruits allowed a comparison of the V-ATPases of the two varieties. In this report they are including two publications from 1996 and 1997 as background for the later publications. A review article with Heven Sze on V-ATPase nomenclature was also generated during the funding period. In addition to the studies on citrus fruit vacuoles, they also initiated studies in two new areas: polar auxin transport and the regulation of stomatal opening by UV-B irradiation. These studies were intended to serve as a basis of future separate grants, but the proposals they submitted on these topics were not funded.
Date: June 22, 2005
Creator: Taiz, Lincoln
Partner: UNT Libraries Government Documents Department

The Hydriding Kinetics of Organic Hydrogen Getters

Description: The aging of hermetically sealed systems is often accompanied by the gradual production of hydrogen gas that is a result of the decay of environmental gases and the degradation of organic materials. In particular, the oxygen, water, hydrogen ''equilibrium'' is affected by the removal of oxygen due the oxidation of metals and organic materials. This shift of the above ''equilibrium'' towards the formation of hydrogen gas, particularly in crevices, may eventually reach an explosive level of hydrogen gas or degrade metals by hydriding them. The latter process is generally delayed until the oxidizing species are significantly reduced. Organic hydrogen getters introduced by Allied Signal Aerospace Company, Kansas City Division have proven to be a very effective means of preventing hydrogen gas accumulation in sealed containers. These getters are relatively unaffected by air and environmental gases. They can be packaged in a variety of ways to fit particular needs such as porous pellets, fine or coarse [gravel] powder, or loaded into silicone rubber. The hydrogen gettering reactions are extremely irreversible since the hydrogen gas is converted into an organic hydrocarbon. These getters are based on the palladium-catalyzed hydrogenation of triple bonds to double and then single bonds in aromatic aryl compounds. DEB (1,4 bis (phenyl ethynyl) benzene) typically mixed with 25% by weight carbon with palladium (1% by weight of carbon) is one of the newest and best of these organic hydrogen getters. The reaction mechanisms are complex involving solid state reaction with a heterogeneous catalyst leading to the many intermediates, including mixed alkyl and aryl hydrocarbons with the possibilities of many isomers. The reaction kinetics mechanisms are also strongly influenced by the form in which they are packaged. For example, the hydriding rates for pellets and gravel have a strong dependence on reaction extent (i.e., DEB reduction) and a kinetic ...
Date: February 11, 2002
Creator: Powell, G. L.
Partner: UNT Libraries Government Documents Department

Deformation of nonstoichiometric CuO polycrystals

Description: The current interest in fabrication methods for high temperature superconductors has fostered heightened interest in the precursor materials. It has been shown that the reaction kinetics for formation of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub x}, (Bi,Pb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x} and YBa{sub 2}Cu{sub 3}O{sub x} are related to the copper oxide precursor through both the size of the starting powder and the oxidation state, with finer CuO powders reacting faster. Many proposed fabrication methods include a high temperature mechanical working step during the reaction process. However, little is known about the diffusional and mechanical properties of CuO at the fabrication temperatures of interest. The literature indicates only that the electrical conductivity of CuO is independent of the oxygen partial pressure (PO{sub 2}). Therefore, only intrinsic ionization occurs for CuO. Thus, for a given temperature, the concentrations of electrons and holes are fixed. In this study, compression creep was employed to shed light upon the diffusion of rate-controlling defects in nonstoichiometric CuO. Tests were performed on polycrystalline samples over a range of temperature (T), PO{sub 2}, and strain rate ({epsilon}). Data were analyzed with standard equations for steady-state creep. Electron microscopy was used in conjunction with the data analysis to identify the operative creep mechanisms. These results for CuO will be contrasted with previous work performed on another copper oxide compound, Cu{sub 2}O.
Date: July 1, 1994
Creator: Boling-Risser, M. A.; Goretta, K. C. & Routbort, J. L.
Partner: UNT Libraries Government Documents Department