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Final report of LDRD project : compact ultrabright multikilovolt x-ray sources for advanced materials studies, 3D nanoimaging, and attosecond x-ray technology.

Description: Experimental evidence and corresponding theoretical analyses have led to the conclusion that the system composed of Xe hollow atom states, that produce a characteristic Xe(L) spontaneous emission spectrum at 1 {at} 2.9 {angstrom} and arise from the excitation of Xe clusters with an intense pulse of 248 nm radiation propagating in a self-trapped plasma channel, closely represents the ideal situation sought for amplification in the multikilovolt region. The key innovation that is central to all aspects of the proposed work is the controlled compression of power to the level ({approx} 10{sup 20} W/cm{sup 3}) corresponding to the maximum achieved by thermonuclear events. Furthermore, since the x-ray power that is produced appears in a coherent form, an entirely new domain of physical interaction is encountered that involves states of matter that are both highly excited and highly ordered. Moreover, these findings lead to the concept of 'photonstaging', an idea which offers the possibility of advancing the power compression by an additional factor of {approx} 10{sup 9} to {approx} 10{sup 29} W/cm{sup 3}. In this completely unexplored regime, g-ray production ({h_bar}{omega}{sub {gamma}} {approx} 1 MeV) is expected to be a leading process. A new technology for the production of very highly penetrating radiation would then be available. The Xe(L) source at {h_bar}{omega}{sub x} {approx} 4.5 keV can be applied immediately to the experimental study of many aspects of the coupling of intense femtosecond x-ray pulses to materials. In a joint collaboration, the UIC group and Sandia plan to explore the following areas. These are specifically, (1) anomalous electromagnetic coupling to solid state materials, (2) 3D nanoimaging of solid matter and hydrated biological materials (e.g. interchromosomal linkers and actin filaments in muscle), and (3) EMP generation with attosecond x-rays.
Date: February 1, 2005
Creator: Loubriel, Guillermo Manuel; Rhodes, Charles Kirkham (University of Illinois at Chicago, Chicago, IL) & Mar, Alan
Partner: UNT Libraries Government Documents Department

Equation of state of warm condensed matter

Description: Recent advances in computational condensed matter theory have yielded accurate calculations of properties of materials. These calculations have, for the most part, focused on the low temperature (T=0) limit. An accurate determination of the equation of state (EOS) at finite temperature also requires knowledge of the behavior of the electron and ion thermal pressure as a function of T. Current approaches often interpolate between calculated T=0 results and approximations valid in the high T limit. Plasma physics-based approaches are accurate in the high temperature limit, but lose accuracy below T{approximately}T{sub Fermi}. We seek to ``connect up`` these two regimes by using ab initio finite temperature methods (including linear-response[1] based phonon calculations) to derive an equation of state of condensed matter for T{<=}T{sub Fermi}. We will present theoretical results for the principal Hugoniot of shocked materials, including carbon and aluminum, up to pressures P>100 GPa and temperatures T>10{sup 4}K, and compare our results with available experimental data.
Date: March 1, 1998
Creator: Barbee, T.W., III; Young, D.A. & Rogers, F.J.
Partner: UNT Libraries Government Documents Department

Isotopically controlled semiconductors

Description: A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.
Date: November 15, 2004
Creator: Haller, E. E.
Partner: UNT Libraries Government Documents Department

Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Description: In this work I investigate the expulsion of carriers from nanostructures using the double-barrier quantum well (DBQW) as an example and discuss manifestations of this effect in the spectrum of the DBQW in absence of bias, and in the tunneling current in presence of bias. Assuming equality of the Fermi energy in all regions of the considered system, I compute the relative density of carriers localized in the DBQW and conclude that a fraction of carriers is expelled from this nanostructure.
Date: March 1992
Creator: Chyla, Wojciech Tadeusz
Partner: UNT Libraries

Linear and Nonlinear Optical Techniques to Characterize Narrow Gap Semicondutors: (Hg /Cd)Te and InSb

Description: Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxTe (HgCdTe) (0.20<x<0.32) and InSb both in the presence of CO2 laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap Eg which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependence of the Hall coefficient and the magnetic field positions of the magnetophonon extrema from which their x-values were determined. The quality of the magnetophonon spectra is also shown to be related to the inhomogeneity Ax of the HgCdTe samples. One-photon magneto-absorption (OPMA) spectra have been obtained for x ~ 0.2 samples of p-HgCdTe thin films and n-HgCdTe bulk samples. Analysis of the OPMA transition energies allows the x-value to be determined to within « ±0.001. A method is also discussed which can be used to estimate the sample inhomogeneity Ax. Nonlinear optical properties of semiconductors are not only scientifically interesting to study, but are also proving to be technologically important as various nonlinear optical devices are being developed. One of the most valuable nonlinear optical characterization method uses twophoton absorption (TPA). Two techniques using TPA processes were developed and used to measure the cut-off wavelength of several different samples of HgCdTe (x ~ 0.3) from which x-values were determined to within «± 0.0005. Intensity and temperature dependent measurements on impurity and TPA processes have also been carried out and the results are compared with rate equations describing the photo-excited carrier dynamics. These results have yielded important information about the optical and material properties of HgCdTe such as the detection of impurity and trapping levels, TPA coefficients, carrier lifetimes, and recombination mechanisms. TPA and ...
Date: May 1986
Creator: McClure, Stephen Warren
Partner: UNT Libraries

Abstracts for Nonequilibrium Superconductivity, Phonons, and Kapitza Boundaries

Description: Compilation of abstracts for lectures that were presented at the NATO Advanced Study Institute on "Nonequilibrium Superconductivity, Phonons and Kapitza Boundaries." The topics primarily discuss work in the area of superconductivity, low-temperature phenomena, and energy-related problems in this field.
Date: May 1980
Creator: Gray, Kenneth E. & Langenberg, Donald N.
Partner: UNT Libraries Government Documents Department