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The Preparation of Beta Silicon Carbide

Description: This report explores the production of beta silicon carbide, a low-temperature, cubic modification of cubic silicon carbide. The temperature, heating time, type of starting material, and proportion of starting materials were all varied in order to test yields of beta silicon carbide.
Date: December 29, 1952
Creator: Gambino, J. R.; Mixer, W. G., Jr.; Wagner, H. E. & Harman, Cameron G.
Partner: UNT Libraries Government Documents Department

University Crystalline Silicon Photovoltaics Research and Development

Description: The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.
Date: August 18, 2008
Creator: Rohatgi, Ajeet; Yelundur, Vijay; Ebong, Abasifreke & Kim, Dong Seop
Partner: UNT Libraries Government Documents Department

Development of Silicon Nanowire Field Effect Transistors

Description: An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.
Date: December 2011
Creator: Nukala, Prathyusha
Partner: UNT Libraries

The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates

Description: Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was successfully grown by sublimation of silicon from epitaxy-ready, Si and C terminated, 6H-SiC wafers in high-vacuum and argon atmosphere. The graphene formation was accompanied by a significant enhancement of Ohmic behavior, and, was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy (HRTEM) showed that the interface between the metal and SiC remained sharp and free of macroscopic defects even after 30 min, 1430 °C anneals. The impact of high dielectric constant Al2O3 and its deposition by radio frequency (RF) magnetron sputtering on the structural and electrical properties of MLG is discussed. HRTEM analysis confirms that the Al2O3/MLG interface is relatively sharp and that thickness approximation of the MLG using angle resolved X-ray photoelectron spectroscopy (ARXPS) as well as variable-angle spectroscopic ellipsometry (VASE) is accurate. The totality of results indicate that ARXPS can be used as a nondestructive tool to measure the thickness of MLG, and that RF sputtered Al2O3 can be used as a (high-k) constant gate oxide in multilayer grapheme based transistor applications.
Date: May 2011
Creator: Maneshian, Mohammad Hassan
Partner: UNT Libraries

High-efficiency solar cells using HEM silicon

Description: Developments in Heat Exchanger Method (HEM) technology for production of multicrystalline silicon ingot production have led to growth of larger ingots (55 cm square cross section) with lower costs and reliability in production. A single reusable crucible has been used to produce 18 multicrystalline 33 cm square cross section 40 kg ingots, and capability to produce 44 cm ingots has been demonstrated. Large area solar cells of 16.3% (42 cm{sup 2}) and 15.3% (100 cm{sup 2}) efficiency have been produced without optimization of the material production and the solar cell processing.
Date: December 31, 1994
Creator: Khattak, C.P.; Schmid, F. & Schubert, W.K.
Partner: UNT Libraries Government Documents Department

New Opportunities in Crystalline Silicon R&D

Description: To support the expected growth of the silicon solar cell industry, we believe that research and development (R&D) activities should be carried out in the following areas: polysilicon feedstock for the PV industry; thin-layer silicon deposition methods, and more environmentally benign cell and module manufacturing processes. For each of these activities, we identify the main issues that needed to be addressed.
Date: October 6, 1998
Creator: Tsuo, Y. S.; Wang, T. H.; Ciszek, T. F. (National Renewable Energy Laboratory) & Menna, P. (ENEA, Portici, Italy)
Partner: UNT Libraries Government Documents Department

Nanofabricated SiO{sub 2}-Si-SiO{sub 2} Resonant Tunneling Diodes

Description: Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.
Date: April 6, 2000
Partner: UNT Libraries Government Documents Department

Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.
Date: May 1999
Creator: Venezia, Vincent C.
Partner: UNT Libraries

The Stopping Power of Amorphous and Channelled Silicon at All Energies as Computed with the Binary Encounter Approximation

Description: This thesis utilizes the binary encounter approximation to calculate the stopping power of protons penetrating silicon. The main goal of the research was to make predictions of the stopping power of silicon for low-energy and medium-energy channelled protons, in the hope that this will motivate experiments to test the theory developed below. In attaining this goal, different stopping power theories were compared and the binary encounter approach was applied to random (non-channelled) and high-energy channelled protons in silicon, and these results were compared with experimental data.
Date: December 1994
Creator: Bickel, David, 1970-
Partner: UNT Libraries

Time Resolved Shadowgraph Images of Silicon during Laser Ablation:Shockwaves and Particle Generation

Description: Time resolved shadowgraph images were recorded of shockwaves and particle ejection from silicon during laser ablation. Particle ejection and expansion were correlated to an internal shockwave resonating between the shockwave front and the target surface. The number of particles ablated increased with laser energy and was related to the crater volume.
Date: May 6, 2006
Creator: Liu, C.Y.; Mao, X.L.; Greif, R. & Russo, R.E.
Partner: UNT Libraries Government Documents Department

An Application of the Concepts of Particle Packing to the Consolication of Silicon Carbide Powders

Description: From introduction: Silicon carbide is being considered as a basis material for nonmetallic fuel elements because of its high thermal conductivity, low nuclear cross section, high resistance to thermal rupture, and high degree of stability at high temperature in air. A requirement of the fuel elements is that they be thin and have as low porosity as possible. One shape of element under consideration is 0.050 to 0.070 inch thick by a few inches in width and breadth.
Date: August 15, 1952
Creator: Harman, Cameron G.; Shinn, J. & Wagner, H. E.
Partner: UNT Libraries Government Documents Department

Three-Dimensional Silicon Photonic Crystals

Description: In this work, we report the realization of a series of silicon 3D photonic crystals operating in the infrared (IR), mid-IR and most importantly the near-IR (k= 1 -2pm) wavelengths. The structure maintains its crystal symmetry throughout the entire 6-inches wafer and holds a complete photonic bandgap.
Date: December 4, 1998
Creator: Biswas, R.; Fleming, J.G.; Hetherington, D.L.; Ho, K.M.; Lin, S.; Sigalas, M.M. et al.
Partner: UNT Libraries Government Documents Department

Nondestructive Evaluation Techniques for Silicon Carbide Heat-Exchanger Tubes : Second Annual Report, October 1978-September 1979

Description: This report discusses the development of ultrasonic testing, acoustic microscopy, dye-enhanced radiography, holographic interferometry, and infrared scanning techniques for flaw detection in silicon carbide (SiC) heat-exchanger tubing. Both preservice and in-service testing requirements are discussed. An ultrasonic boreside probe and an acoustic microscope stage have been designed for continuous monitoring of SiC tubing. Preliminary results with these acoustic systems are presented. In addition, a novel technique for detecting small surface flaws using holographic interferometry is discussed. Fracture mechanics analysis suggests that detection of flaws on the order of 100 um is necessary to assure good reliability of ceramic heat exchangers. The acoustic and holographic techniques have been shown to be capable of detecting flaws of this size. However, the sensitivity of ultrasonic flaw detection in SiC is affected by the microstructure of the component. The practical considerations involved in the use of these techniques are discussed.
Date: November 1979
Creator: Kupperman, D. S.; Yuhas, D.; Deininger, W. & Sciammarella, Cesar A.
Partner: UNT Libraries Government Documents Department

Microstructure studies of silicon-on-insulator for very large scale integrated circuit applications

Description: Silicon-on-insulator formed by high dose oxygen ion implantation and subsequent epitaxially grown silicon layers were studied and compared with silicon on sapphire materials. Czochralski grown, (100) silicon wafers were implanted with molecular oxygen ions, 0+2, to a total dose of 2.12 x 10^18 0+/cm^2 at an energy of 150 keV/atom.
Date: December 1982
Creator: Hamdi, Aboud Helal
Partner: UNT Libraries

Spectrophotometric Determination of Silicon in Zirconium

Description: Report presenting background and instructions on completing spectrophotometric determination of silicon in zirconium, which relies on the solubility of silicon tetrachloride in a small amount of nitric acid solution and the complexing of fluorides with boric acid.
Date: February 25, 1951
Creator: Read, E. B. & Martin, J. P.
Partner: UNT Libraries Government Documents Department

Lipid membranes on nanostructured silicon.

Description: A unique composite nanoscale architecture that combines the self-organization and molecular dynamics of lipid membranes with a corrugated nanotextured silicon wafer was prepared and characterized with fluorescence microscopy and scanning probe microscopy. The goal of this project was to understand how such structures can be assembled for supported membrane research and how the interfacial interactions between the solid substrate and the soft, self-assembled material create unique physical and mechanical behavior through the confinement of phases in the membrane. The nanometer scale structure of the silicon wafer was produced through interference lithography followed by anisotropic wet etching. For the present study, a line pattern with 100 nm line widths, 200 nm depth and a pitch of 360 nm pitch was fabricated. Lipid membranes were successfully adsorbed on the structured silicon surface via membrane fusion techniques. The surface topology of the bilayer-Si structure was imaged using in situ tapping mode atomic force microscopy (AFM). The membrane was observed to drape over the silicon structure producing an undulated topology with amplitude of 40 nm that matched the 360 nm pitch of the silicon structure. Fluorescence recovery after photobleaching (FRAP) experiments found that on the microscale those same structures exhibit anisotropic lipid mobility that was coincident with the silicon substructure. The results showed that while the lipid membrane maintains much of its self-assembled structure in the composite architecture, the silicon substructure indeed influences the dynamics of the molecular motion within the membrane.
Date: December 1, 2004
Creator: Slade, Andrea Lynn; Lopez, Gabriel P. (University of New Mexico, Albuquerque, NM); Ista, Linnea K. (University of New Mexico, Albuquerque, NM); O'Brien, Michael J. (University of New Mexico, Albuquerque, NM); Sasaki, Darryl Yoshio; Bisong, Paul (University of New Mexico, Albuquerque, NM) et al.
Partner: UNT Libraries Government Documents Department

Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon

Description: Deep reactive ion etching (DRIE) of silicon was utilized to fabricate dielectric membrane-based devices such as microhotplates, valves and flexural plate wave (FPW) devices. Through-wafer DRIE is characterized by fast etch rates ({approximately} 3 {micro}m/min), crystal orientation independence, vertical sidewall profiles and CMOS compatibility. Low-stress silicon nitride, a popular membrane material, has an appreciable DRIE etch rate. To overcome this limitations DRIE can be accompanied by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly lower etch rates on silicon nitride than does DRIE. The DRIE etch properties of composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide.
Date: August 1, 1998
Creator: Manginell, R.P.; Frye-Mason, G.C.; Schubert, W.K.; Shul, R.J. & Willison, C.G.
Partner: UNT Libraries Government Documents Department

Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells

Description: A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO{sub 2} (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 cm/s at the 1.3 {Omega}-cm p-type (100) silicon surface. Such low S is achieved by the stack even when the RTO and SiN films individually yield considerably poorer surface passivation. Critical to achieving low S by the stack is the use of a short, moderate temperature anneal (in this study 730 C for 30 seconds) after film growth and deposition. This anneal is believed to enhance the release and delivery of atomic hydrogen from the SiN film to the Si-SiO{sub 2} interface, thereby reducing the density of interface traps at the surface. Compatibility with this post-deposition anneal makes the stack passivation scheme attractive for cost-effective solar cell production since a similar anneal is required to fire screen-printed contacts. Application of the stack to passivated rear screen-printed solar cells has resulted in V{sub oc}`s of 641 mV and 633 mV on 0.65 {Omega}-cm and 1.3 {Omega}-cm FZ Si substrates, respectively. These V{sub oc} values are roughly 20 mV higher than for cells with untreated, highly recombinative back surfaces. The stack passivation has also been used to form fully screen-printed bifacial solar cells which exhibit rear-illuminated efficiency as high as 11.6% with a single layer AR coating.
Date: August 1, 1998
Creator: Rohatgi, A.; Narasimha, S. & Ruby, D.S.
Partner: UNT Libraries Government Documents Department

Improved performance of self-aligned, selective-emitter silicon solar cells

Description: The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. They used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. The authors also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.
Date: December 31, 1997
Creator: Ruby, D. S.; Yang, P.; Zaidi, S.; Brueck, S.; Roy, M. & Narayanan, S.
Partner: UNT Libraries Government Documents Department