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Low-Cost Solar Array Project. Progress report 14, August 1979-December 1979 and proceedings of the 14th Project Integration Meeting

Description: Progress made by the Low-Cost Solar Array Project during the period August through November 1979, is described. Progress on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering, and operations, and the steps taken to integrate these efforts are detailed. A report on the Project Integration Meeting held December 5-6, 1979, including copies of the visual materials used, … more
Date: January 1, 1980
Partner: UNT Libraries Government Documents Department
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Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980

Description: During this reporting period, the primary activity has been to develop microprocessor control of the crystal growth process and to develop and demonstrate the accelerated crystal growth program. Accelerated recharging of the quartz crucible by the RF melting of polycrystalline silicon feed rods was deemphasized by JPL primarily due to the unavailability of suitable quality feed rods at an effective economical price. The development of the cold crucible program as an alternative method of crucib… more
Date: January 1, 1980
Creator: Roberts, E. G.
Partner: UNT Libraries Government Documents Department
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Microcrystalline silicon growth for heterojunction solar cells. Second quarterly report, 1 April 1983-30 June 1983

Description: In this reporting period, a single source of evaporation with B mixed with highly doped Si was used instead of the co-evaporation of separate Si and B sources. The purpose was to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, were similar to last quarter when evaporation was used. The best Voc of the heterojunction was about 460mV and no improvement in Voc in the heteroface structure, was observed; slight Voc degradation occurred.… more
Date: January 1, 1983
Creator: Iles, P. A.; Leung, D. C. & Fang, P. H.
Partner: UNT Libraries Government Documents Department
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Damage nucleation in Si during ion irradiation

Description: Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects … more
Date: January 1, 1984
Creator: Holland, O.W.; Fathy, D. & Narayan, J.
Partner: UNT Libraries Government Documents Department
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X-ray measurements of stresses and defects in EFG and large grained polycrystalline silicon ribbons. First quarterly report

Description: The first model of a modified Bond goniometer has been built and tested for the precision measurement of interplanar spacings in Si-single crystals. A change in interplanar spacing ..delta..d/d approximately = to +- 10/sup -5/ can be detected which corresponds to surface stresses of the order of +- 1000 psi. A second version of the goniometer is being assembled incorporating a removable microscope for precision alignment of the Si-strip into the primary X-ray beam.
Date: January 1, 1978
Creator: Wagner, C.N.J.
Partner: UNT Libraries Government Documents Department
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Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 2

Description: Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation in solar cells are reported. Investigations on homogenization of the laser beam were continued. In addition to the 30 mm diameter fused silica rod with a 90/sup 0/ bend configuration, quartz tubes were obtained and briefly tried. Best results were obtained with the rod homogenizer. Laser annealing experimentation resulted in complete recrystallization of … more
Date: October 1, 1980
Creator: Katzeff, J. S.
Partner: UNT Libraries Government Documents Department
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Physics of antimatter-matter reactions for interstellar propulsion

Description: At the stage of the antiproton-nucleon annihilation chain of events relevant to propulsion the annihilation produces energetic charged pions and gamma rays. If annihilation occurs in a complex nucleus, protons, neutrons, and other nuclear fragments are also produced. The charge, number, and energy of the annihilation products are such that annihilation rocket engine concepts involving relatively low specific impulse (I/sub sp/ approx. = 1000 to 2000 s) and very high I/sub sp/ (3 x 10/sup 7/ s) … more
Date: August 22, 1986
Creator: Morgan, D.L. Jr.
Partner: UNT Libraries Government Documents Department
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Radiation-induced segregation in HT-9 martensitic steel

Description: Miniature notched-bar specimens of normalized and tempered HT-9 were neutron irradiated to approx.13 dpa and broken at liquid nitrogen temperatures in a UHV chamber. Fracture surfaces were analyzed using scanning Auger electron spectroscopy. Following irradiation at 410/sup 0/C, the fracture surface contained a small number of large relatively smooth facets, which are thought to be prior austenite grain boundaries. Strong segregation of Ni, Cr, Si, and P was detected at these surfaces, the rema… more
Date: January 1, 1986
Creator: Clausing, R.E.; Heatherly, L.; Faulkner, R.G.; Rowcliffe, A.F. & Farrell, K.
Partner: UNT Libraries Government Documents Department
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Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process. Quarterly progress report, October-December 1979

Description: This program consists of the engineering design, fabrication, assembly, operation, economic analysis, and process support R and D for an Experimental Process System Development Unit (EPSDU). EPSDU equipment specification, vendor development, and evaluation of quotations represent a significant effort which will permit the start of ordering EPSDU equipment during the next quarter. Initial mini-burner test results are encouraging. It appears that a fairly simple and cost-effective waste treatment… more
Date: January 1, 1979
Partner: UNT Libraries Government Documents Department
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Development of passive electronic components for instrumentation of improved geothermal logging tools and components. Annual progress report

Description: Short term objectives for well-logging instrumentation are circuits which can operate at temperatures in the range 275/sup 0/C to 350/sup 0/C; the medium term goal is operation up to 500/sup 0/C, and the long term goal is to achieve operation at 1000/sup 0/C. It is apparent that useful electronic circuits will require the combination of both passive components and active devices. In order to meet the compatibility requirements, the basic technology which has been selected in this project is the… more
Date: October 20, 1977
Creator: Raymond, L.S.; Hamilton, D.J. & Kerwin, W.J.
Partner: UNT Libraries Government Documents Department
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Investigations of CuInSe sub 2 Thin Films and Contacts

Description: This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, … more
Date: October 1, 1991
Creator: Nicolet, M. A.
Partner: UNT Libraries Government Documents Department
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Theoretical study of the structure, energetics, and dynamics of silicon and carbon systems using tight-binding approaches

Description: Semiempirical interatomic potentials are developed for silicon and carbon by modeling the total energy of the system using tight-binding approaches. The parameters of the models were obtained by fitting to results from accurate first-principles Local Density Functional calculations. Applications to the computation of phonons as a function of volume for diamond-structured silicon and carbon and the thermal expansions for silicon and diamond yields results which agree well with experiment. The ph… more
Date: October 25, 1991
Creator: Xu, Chunhui.
Partner: UNT Libraries Government Documents Department
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Micro-scale mass-transfer variations during electrodeposition

Description: Results of two studies on micro-scale mass-transfer enhancement are reported: (1) Profiled cross-sections of striated zinc surfaces deposited in laminar channel flow were analyzed with fast-fourier transforms (FFT) to determine preferred striation wavelengths. Striation frequency increases with current density until a minimum separation between striae of 150 {mu}m is reached. Beyond this point, independent of substrate used, striae meld together and form a relatively smooth, nodular deposit. Su… more
Date: August 1, 1991
Creator: Sutija, D.P.
Partner: UNT Libraries Government Documents Department
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Low-cost solar array project. Task I. Silicon material. Investigation of the hydrogenation of SiCl/sub 4/

Description: Reaction kinetic measurements on the hydrochlorination of SiCl/sub 4/ and m.g. silicon metal were last reported as a function of reaction temperature, reactor pressure, H/sub 2//SiCl/sub 4/ ratio and silicon metal particle size distribution, 3 SiCl/sub 4/ + 2 H/sub 2/ + Si reversible 4 SiHCl/sub 3/. The effect of impurities in the m.g. silicon metal on the rate of this reaction has been investigated in this quarter. The m.g. silicon was replaced with high purity, electronic grade silicon metal … more
Date: October 7, 1980
Creator: Mui, J. Y. P. & Seyferth, D.
Partner: UNT Libraries Government Documents Department
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Development and evaluation of die and container materials. Final report

Description: Specific compositions of high purity silicon aluminum oxynitride (Sialon) and silicon beryllium oxynitride (Sibeon) solid solutions are shown to be promising refractory materials for handling and manipulating solar grade silicon into silicon ribbon. Well controlled processing schedules were developed for fabricating high purity Sialon and Sibeon materials. Essentially the impurity content of the hot pressed ceramics was due only to impurities from the original starting powders. A ceramic shapin… more
Date: May 1, 1979
Partner: UNT Libraries Government Documents Department
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Silicon mass transfer in sodium loops and the resulting/thermal hydraulic effects. [LMFBR]

Description: The element silicon in the surface of new, 300 series stainless steel has been shown to rapidly dissolve in sodium above 525/sup 0/C. It deposits in slightly cooler regions as a crystalline compound with sodium and oxygen. In tests, the deposits have caused increases in hydraulic friction factor (hence, increased pressure loss) of up to 300% at Reynolds Numbers of 14/sup 4/ to 10/sup 5/.Also, they have contributed to local losses of heat transfer rate to 1/10 the original value, at a Reynolds N… more
Date: February 1, 1980
Creator: Yunker, W.H.
Partner: UNT Libraries Government Documents Department
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Edge-on ion irradiation of electron microscope specimens

Description: A special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect… more
Date: January 1, 1992
Creator: Otero, M. P. & Allen, C. W.
Partner: UNT Libraries Government Documents Department
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Silicon ingot casting: Heat Exchanger Method (HEM)/multi-wire slicing: Fixed Abrasive Slicing Technique (FAST), Phase IV. Quarterly progress report No. 2, April 1, 1980-June 30, 1980

Description: Silicon ingot size cast by HEM has been extended to 34 cm x 34 cm x 10 cm. A 20 kg ingot has been solidified at 3 kg/hr with no crucible attachment or ingot cracking problems. Another ingot of 26 kg weight has also been solidified. The heat treatment used to develop a graded structure caused cracking on the inside surface of the first large crucibles. The thermal conditions were altered to minimize high gradients and the cracking was eliminated. A high degree of single crystallinity has been ma… more
Date: August 1, 1980
Creator: Schmid, F.; Khattak, C.P. & Basaran, M.
Partner: UNT Libraries Government Documents Department
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Novel duplex vapor-electrochemical method for silicon solar cells. Quarterly progress report No. 7, August 1, 1977--October 31, 1977

Description: Silicon obtained by the SiF/sub 4/-Na reaction was analyzed by spark source mass spectrometry (SSMS). A partial listing of the results is given below. The concentration units in parentheses are ppM wt. B(0.1), Al(0.8), Ga(0.06), P(0.2), F(0.1), Na(1.0), V(0.04), Mo(0.3), Ti(2.0), Zr(2.0), Mn(0.1), Ni(2.0), Zn(0.01), Cu(20.0), Cr(11.0), Fe(55.0). An excellent starting material for silicon solar cells is obtained on the basis of the low levels of B, Al, Ga, P and As. The source of the Fe and Cr i… more
Date: December 1, 1977
Creator: Kapur, V.K.; Nanis, L. & Sanjurjo, A.
Partner: UNT Libraries Government Documents Department
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Array automated assembly: Phase 2. Quarterly report

Description: An analysis was made of cost trade-offs for shaping modified square wafers from cylindrical crystals. For reasonably expectable silicon and sheet costs, the optimum shape will be nearer a circle than a square. Tests were conducted of the effectiveness of texture etching for removal of surface damage on sawed wafers. Four glass systems have survived preliminary screening tests for use as edge masking dielectrics. These include beta-spodumen, MgO-Al/sub 2/O/sub 3/ borosilicate, baria and titania … more
Date: February 1, 1978
Creator: Taylor, W.E.
Partner: UNT Libraries Government Documents Department
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Fossil Energy Advanced Research and Technology Development (AR TD) Materials Program semiannual progress report for the period ending September 30, 1991

Description: The objective of the Fossil Energy Advanced Research and Technology Development Materials Program is to conduct research and development on materials for fossil energy applications with a focus on the longer-term and generic needs of the various fossil fuel technologies. The Program includes research aimed toward a better understanding of materials behavior in fossil energy environments and the development of new materials capable of substantial enhancement of plant operations and reliability. … more
Date: April 1, 1992
Creator: Judkins, R.R. & Cole, N.C. (comps.)
Partner: UNT Libraries Government Documents Department
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Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980

Description: Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. C… more
Date: March 1, 1980
Creator: Yaws, C.L. & Li, K.Y.
Partner: UNT Libraries Government Documents Department
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Process feasibility study in support of silicon material task 1. Quarterly technical progress report (XX), June 1-August 31, 1980

Description: Analyses of process system properties were continued for chemical materials important in the production of silicon including compilation and collection activities of the property data for use in the final report. Major efforts in chemical engineering analysis centered on the DCS process - Case A which involves production of dichlorosilane (DCS) as a silicon source material for polysilicon production in the Hemlock Semiconductor Corporation program. The preliminary process design of a plant to p… more
Date: September 1, 1980
Creator: Yaws, C.L. & Li, K.Y.
Partner: UNT Libraries Government Documents Department
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