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in subjects: "Silicon"

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Low-Cost Solar Array Project. Progress report 14, August 1979-December 1979 and proceedings of the 14th Project Integration Meeting

Progress made by the Low-Cost Solar Array Project during the period August through November 1979, is described. Progress on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering, and operations, and the steps taken to integrate these efforts are detailed. A report on the Project Integration Meeting held December 5-6, 1979, including copies of the visual materials used, … more

Date: January 1, 1980

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980

During this reporting period, the primary activity has been to develop microprocessor control of the crystal growth process and to develop and demonstrate the accelerated crystal growth program. Accelerated recharging of the quartz crucible by the RF melting of polycrystalline silicon feed rods was deemphasized by JPL primarily due to the unavailability of suitable quality feed rods at an effective economical price. The development of the cold crucible program as an alternative method of crucib… more

Date: January 1, 1980

Creator: Roberts, E. G.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Damage nucleation in Si during ion irradiation

Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects … more

Date: January 1, 1984

Creator: Holland, O.W.; Fathy, D. & Narayan, J.

Item Type: Article

Partner: UNT Libraries Government Documents Department

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X-ray measurements of stresses and defects in EFG and large grained polycrystalline silicon ribbons. First quarterly report

The first model of a modified Bond goniometer has been built and tested for the precision measurement of interplanar spacings in Si-single crystals. A change in interplanar spacing ..delta..d/d approximately = to +- 10/sup -5/ can be detected which corresponds to surface stresses of the order of +- 1000 psi. A second version of the goniometer is being assembled incorporating a removable microscope for precision alignment of the Si-strip into the primary X-ray beam.

Date: January 1, 1978

Creator: Wagner, C.N.J.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 2

Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation in solar cells are reported. Investigations on homogenization of the laser beam were continued. In addition to the 30 mm diameter fused silica rod with a 90/sup 0/ bend configuration, quartz tubes were obtained and briefly tried. Best results were obtained with the rod homogenizer. Laser annealing experimentation resulted in complete recrystallization of … more

Date: October 1, 1980

Creator: Katzeff, J. S.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Physics of antimatter-matter reactions for interstellar propulsion

At the stage of the antiproton-nucleon annihilation chain of events relevant to propulsion the annihilation produces energetic charged pions and gamma rays. If annihilation occurs in a complex nucleus, protons, neutrons, and other nuclear fragments are also produced. The charge, number, and energy of the annihilation products are such that annihilation rocket engine concepts involving relatively low specific impulse (I/sub sp/ approx. = 1000 to 2000 s) and very high I/sub sp/ (3 x 10/sup 7/ s) … more

Date: August 22, 1986

Creator: Morgan, D.L. Jr.

Item Type: Article

Partner: UNT Libraries Government Documents Department

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Radiation-induced segregation in HT-9 martensitic steel

Miniature notched-bar specimens of normalized and tempered HT-9 were neutron irradiated to approx.13 dpa and broken at liquid nitrogen temperatures in a UHV chamber. Fracture surfaces were analyzed using scanning Auger electron spectroscopy. Following irradiation at 410/sup 0/C, the fracture surface contained a small number of large relatively smooth facets, which are thought to be prior austenite grain boundaries. Strong segregation of Ni, Cr, Si, and P was detected at these surfaces, the rema… more

Date: January 1, 1986

Creator: Clausing, R.E.; Heatherly, L.; Faulkner, R.G.; Rowcliffe, A.F. & Farrell, K.

Item Type: Article

Partner: UNT Libraries Government Documents Department

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Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process. Quarterly progress report, October-December 1979

This program consists of the engineering design, fabrication, assembly, operation, economic analysis, and process support R and D for an Experimental Process System Development Unit (EPSDU). EPSDU equipment specification, vendor development, and evaluation of quotations represent a significant effort which will permit the start of ordering EPSDU equipment during the next quarter. Initial mini-burner test results are encouraging. It appears that a fairly simple and cost-effective waste treatment… more

Date: January 1, 1979

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Development of passive electronic components for instrumentation of improved geothermal logging tools and components. Annual progress report

Short term objectives for well-logging instrumentation are circuits which can operate at temperatures in the range 275/sup 0/C to 350/sup 0/C; the medium term goal is operation up to 500/sup 0/C, and the long term goal is to achieve operation at 1000/sup 0/C. It is apparent that useful electronic circuits will require the combination of both passive components and active devices. In order to meet the compatibility requirements, the basic technology which has been selected in this project is the… more

Date: October 20, 1977

Creator: Raymond, L.S.; Hamilton, D.J. & Kerwin, W.J.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Investigations of CuInSe sub 2 Thin Films and Contacts

This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, … more

Date: October 1, 1991

Creator: Nicolet, M. A.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Low-cost solar array project. Task I. Silicon material. Investigation of the hydrogenation of SiCl/sub 4/

Reaction kinetic measurements on the hydrochlorination of SiCl/sub 4/ and m.g. silicon metal were last reported as a function of reaction temperature, reactor pressure, H/sub 2//SiCl/sub 4/ ratio and silicon metal particle size distribution, 3 SiCl/sub 4/ + 2 H/sub 2/ + Si reversible 4 SiHCl/sub 3/. The effect of impurities in the m.g. silicon metal on the rate of this reaction has been investigated in this quarter. The m.g. silicon was replaced with high purity, electronic grade silicon metal … more

Date: October 7, 1980

Creator: Mui, J. Y. P. & Seyferth, D.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Development and evaluation of die and container materials. Final report

Specific compositions of high purity silicon aluminum oxynitride (Sialon) and silicon beryllium oxynitride (Sibeon) solid solutions are shown to be promising refractory materials for handling and manipulating solar grade silicon into silicon ribbon. Well controlled processing schedules were developed for fabricating high purity Sialon and Sibeon materials. Essentially the impurity content of the hot pressed ceramics was due only to impurities from the original starting powders. A ceramic shapin… more

Date: May 1, 1979

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Silicon mass transfer in sodium loops and the resulting/thermal hydraulic effects. [LMFBR]

The element silicon in the surface of new, 300 series stainless steel has been shown to rapidly dissolve in sodium above 525/sup 0/C. It deposits in slightly cooler regions as a crystalline compound with sodium and oxygen. In tests, the deposits have caused increases in hydraulic friction factor (hence, increased pressure loss) of up to 300% at Reynolds Numbers of 14/sup 4/ to 10/sup 5/.Also, they have contributed to local losses of heat transfer rate to 1/10 the original value, at a Reynolds N… more

Date: February 1, 1980

Creator: Yunker, W.H.

Item Type: Article

Partner: UNT Libraries Government Documents Department

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Edge-on ion irradiation of electron microscope specimens

A special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect… more

Date: January 1, 1992

Creator: Otero, M. P. & Allen, C. W.

Item Type: Article

Partner: UNT Libraries Government Documents Department

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Silicon ingot casting: Heat Exchanger Method (HEM)/multi-wire slicing: Fixed Abrasive Slicing Technique (FAST), Phase IV. Quarterly progress report No. 2, April 1, 1980-June 30, 1980

Silicon ingot size cast by HEM has been extended to 34 cm x 34 cm x 10 cm. A 20 kg ingot has been solidified at 3 kg/hr with no crucible attachment or ingot cracking problems. Another ingot of 26 kg weight has also been solidified. The heat treatment used to develop a graded structure caused cracking on the inside surface of the first large crucibles. The thermal conditions were altered to minimize high gradients and the cracking was eliminated. A high degree of single crystallinity has been ma… more

Date: August 1, 1980

Creator: Schmid, F.; Khattak, C.P. & Basaran, M.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Novel duplex vapor-electrochemical method for silicon solar cells. Quarterly progress report No. 7, August 1, 1977--October 31, 1977

Silicon obtained by the SiF/sub 4/-Na reaction was analyzed by spark source mass spectrometry (SSMS). A partial listing of the results is given below. The concentration units in parentheses are ppM wt. B(0.1), Al(0.8), Ga(0.06), P(0.2), F(0.1), Na(1.0), V(0.04), Mo(0.3), Ti(2.0), Zr(2.0), Mn(0.1), Ni(2.0), Zn(0.01), Cu(20.0), Cr(11.0), Fe(55.0). An excellent starting material for silicon solar cells is obtained on the basis of the low levels of B, Al, Ga, P and As. The source of the Fe and Cr i… more

Date: December 1, 1977

Creator: Kapur, V.K.; Nanis, L. & Sanjurjo, A.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Array automated assembly: Phase 2. Quarterly report

An analysis was made of cost trade-offs for shaping modified square wafers from cylindrical crystals. For reasonably expectable silicon and sheet costs, the optimum shape will be nearer a circle than a square. Tests were conducted of the effectiveness of texture etching for removal of surface damage on sawed wafers. Four glass systems have survived preliminary screening tests for use as edge masking dielectrics. These include beta-spodumen, MgO-Al/sub 2/O/sub 3/ borosilicate, baria and titania … more

Date: February 1, 1978

Creator: Taylor, W.E.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Fossil Energy Advanced Research and Technology Development (AR TD) Materials Program semiannual progress report for the period ending September 30, 1991

The objective of the Fossil Energy Advanced Research and Technology Development Materials Program is to conduct research and development on materials for fossil energy applications with a focus on the longer-term and generic needs of the various fossil fuel technologies. The Program includes research aimed toward a better understanding of materials behavior in fossil energy environments and the development of new materials capable of substantial enhancement of plant operations and reliability. … more

Date: April 1, 1992

Creator: Judkins, R.R. & Cole, N.C. (comps.)

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. C… more

Date: March 1, 1980

Creator: Yaws, C.L. & Li, K.Y.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Process feasibility study in support of silicon material task 1. Quarterly technical progress report (XX), June 1-August 31, 1980

Analyses of process system properties were continued for chemical materials important in the production of silicon including compilation and collection activities of the property data for use in the final report. Major efforts in chemical engineering analysis centered on the DCS process - Case A which involves production of dichlorosilane (DCS) as a silicon source material for polysilicon production in the Hemlock Semiconductor Corporation program. The preliminary process design of a plant to p… more

Date: September 1, 1980

Creator: Yaws, C.L. & Li, K.Y.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Solutions to heavy ion induced avalanche burnout in power devices

Silicon power devices fall into two broad categories, bipolar and field effect. Transistors using both of these technologies are often used in satellite applications for power conversion. The present trend is toward integrating power transistors and control electronics on the same chip. In this case, it is the power portion of the chip that is most susceptible to burnout failures, because of it's high voltage operation. Hence, it is important to understand the operational limitations of power t… more

Date: January 1, 1991

Creator: Wrobel, T. F. & Beutler, D. E.

Item Type: Article

Partner: UNT Libraries Government Documents Department

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Silicon halide-alkali metal flames as a source of solar grade silicon. Second quarterly report, September 1--November 30, 1977

The experimental effort on this program has concentrated thus far on Na/SiCl/sub 4/ and K/SiCl/sub 4/ opposed jet diffusion flames in an evacuated reaction vessel; both reactants are supplied as vapors. The flames are self-igniting, fast burning and intensely chemiluminescent. Solid reaction products have been collected, separated by simple washing, and some preliminary analyses performed which indicate that the concentrations of most impurities in the reagents are reduced during the course of … more

Date: December 1, 1977

Creator: Miller, W.J.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Continuous Czochralski growth. Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array Project. First quarterly progress report, October--December 1977

The development of equipment and processes to produce single crystal solar silicon by a continuous Czochralski method was studied. ''Continuous'' is defined as the ability to produce 100 kilograms of crystal from only one melt container. The equipment to be used is a Hamco CG2000 Production Crystal Grower. Certain modifications will be made to the grower to enable periodic replenishment of silicon into the crucible and removal of grown crystals. The crystal grower was constr… more

Date: December 31, 1977

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Heat exchanger method: ingot casting; fixed abrasive method: multi-wire slicing (Phase II). Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Quarterly progress report No. 1, November 21, 1977--December 31, 1977

A high degree of crystallinity has been achieved in ingots cast. Since most of the growth took place near the solidification temperature, the top portion of the ingot was solidified by freezing from the surface. The thickness of this layer was reduced with the control of thermal flow characteristics in the furnace. The crucibles used in this study have a nonuniform bottom which is not conducive to proper heat transfer during solidification. In an effort to achieve high packing density of solar … more

Date: January 6, 1978

Creator: Schmid, F. & Khattak, C.P.

Item Type: Report

Partner: UNT Libraries Government Documents Department