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Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry

Description: The summary of this report is that: in situ SE gives insight into growth mechanisms and accurate layer thickness; (2) ex situ SE measures completed device structures to determine integrated optical properties; and (3) the combination of in situ and ex situ SE provides a powerful method for pinpointing the effects of processing changes in actual SHJ devices and guiding optimization.
Date: May 1, 2006
Creator: Levi, D.; Iwaniczko, E.; Page, M.; Branz, H. & Wang, T.
Partner: UNT Libraries Government Documents Department
open access

Effective Interfaces in Silicon Heterojunction Solar Cells

Description: This paper reviews the current commercial status of CuInSe2 alloys (collectively, CIS) and CdTe-based photovoltaic (PV) modules, comparing the performance of commercial products with the results achieved for solar cell and prototype module champions. We provide an update for these PV cell and module technologies, and also compare CIS and CdTe performance levels to the results achieved by the crystalline Si PV industry. This comparison shows that CIS and CdTe module technology presently offers t… more
Date: February 1, 2005
Creator: Wang, T. H.; Iwaniczko, E.; Page, M. R.; Levi, D. H.; Yan, Y.; Yelundur, V. et al.
Partner: UNT Libraries Government Documents Department
open access

Photoconductive Decay Lifetime and Suns-Voc Diagnostics of Efficient Heterojunction Solar Cells: Preprint

Description: We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunction devices and compare Suns-Voc results to Light I-V measurements on 1 cm2 solar cell devices measured on an AM1.5 calibrated XT-10 solar simulator.
Date: May 1, 2008
Creator: Page, M. R.; Iwaniczko, E.; Xu, Y.; L., Roybal; Bauer, R.; Yan, H.-C. et al.
Partner: UNT Libraries Government Documents Department
open access

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint

Description: Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an ind… more
Date: May 1, 2008
Creator: Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R. et al.
Partner: UNT Libraries Government Documents Department
open access

Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si

Description: Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback o… more
Date: January 1, 2005
Creator: Levi, D.; Teplin, C.; Iwaniczko, E.; Wang, T.; Wang, Q.; Yan, Y. et al.
Partner: UNT Libraries Government Documents Department
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