Advancements in the characterization of 'hyper-thin' oxynitride gate dielectrics through exit wave reconstruction HRTEM and XPS
Description:
The physical thickness of silicon oxynitride gate dielectric materials currently in development have dimensions in the range of 15-20 Angstrom ({approx}6-8 oxygen atoms), while approaching the dielectric constant equivalent oxide thickness (EOT) of 12 Angstrom silicon dioxide. These structures present serious challenges in meeting stringent requirements within the semiconductor industry for precise determination of thickness, interfacial roughness and chemical distribution. Limitations in conve…
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Date:
September 1, 2002
Creator:
Principe, E.L.; Watson, D.G. & Kisielowski, C.
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UNT Libraries Government Documents Department