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The Preparation of Beta Silicon Carbide

Description: This report explores the production of beta silicon carbide, a low-temperature, cubic modification of cubic silicon carbide. The temperature, heating time, type of starting material, and proportion of starting materials were all varied in order to test yields of beta silicon carbide.
Date: December 29, 1952
Creator: Gambino, J. R.; Mixer, W. G., Jr.; Wagner, H. E. & Harman, Cameron G.
Partner: UNT Libraries Government Documents Department

The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates

Description: Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was successfully grown by sublimation of silicon from epitaxy-ready, Si and C terminated, 6H-SiC wafers in high-vacuum and argon atmosphere. The graphene formation was accompanied by a significant enhancement of Ohmic behavior, and, was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy (HRTEM) showed that the interface between the metal and SiC remained sharp and free of macroscopic defects even after 30 min, 1430 °C anneals. The impact of high dielectric constant Al2O3 and its deposition by radio frequency (RF) magnetron sputtering on the structural and electrical properties of MLG is discussed. HRTEM analysis confirms that the Al2O3/MLG interface is relatively sharp and that thickness approximation of the MLG using angle resolved X-ray photoelectron spectroscopy (ARXPS) as well as variable-angle spectroscopic ellipsometry (VASE) is accurate. The totality of results indicate that ARXPS can be used as a nondestructive tool to measure the thickness of MLG, and that RF sputtered Al2O3 can be used as a (high-k) constant gate oxide in multilayer grapheme based transistor applications.
Date: May 2011
Creator: Maneshian, Mohammad Hassan
Partner: UNT Libraries

An Application of the Concepts of Particle Packing to the Consolication of Silicon Carbide Powders

Description: From introduction: Silicon carbide is being considered as a basis material for nonmetallic fuel elements because of its high thermal conductivity, low nuclear cross section, high resistance to thermal rupture, and high degree of stability at high temperature in air. A requirement of the fuel elements is that they be thin and have as low porosity as possible. One shape of element under consideration is 0.050 to 0.070 inch thick by a few inches in width and breadth.
Date: August 15, 1952
Creator: Harman, Cameron G.; Shinn, J. & Wagner, H. E.
Partner: UNT Libraries Government Documents Department

Nondestructive Evaluation Techniques for Silicon Carbide Heat-Exchanger Tubes : Second Annual Report, October 1978-September 1979

Description: This report discusses the development of ultrasonic testing, acoustic microscopy, dye-enhanced radiography, holographic interferometry, and infrared scanning techniques for flaw detection in silicon carbide (SiC) heat-exchanger tubing. Both preservice and in-service testing requirements are discussed. An ultrasonic boreside probe and an acoustic microscope stage have been designed for continuous monitoring of SiC tubing. Preliminary results with these acoustic systems are presented. In addition, a novel technique for detecting small surface flaws using holographic interferometry is discussed. Fracture mechanics analysis suggests that detection of flaws on the order of 100 um is necessary to assure good reliability of ceramic heat exchangers. The acoustic and holographic techniques have been shown to be capable of detecting flaws of this size. However, the sensitivity of ultrasonic flaw detection in SiC is affected by the microstructure of the component. The practical considerations involved in the use of these techniques are discussed.
Date: November 1979
Creator: Kupperman, D. S.; Yuhas, D.; Deininger, W. & Sciammarella, Cesar A.
Partner: UNT Libraries Government Documents Department

Nondestructive Evaluation Techniques for Silicon Carbide Heat-Exchanger Tubes : Annual Report, October 1977-September 1978

Description: This report discusses the adequacy of several nondestructive evaluation techniques for the detection of flaws in silicon carbide heat-exchanger tubing. Experimental results have been obtained for conventional ultrasonic testing, acoustic microscopy, conventional and dye-enhanced radiography, holographic interferometry, infrared scanning and internal-friction measurements.
Date: March 1979
Creator: Kupperman, D. S.; Yuhas, D.; Sciammarella, Cesar A.; Lapinski, N. P. & Fiore, N. F.
Partner: UNT Libraries Government Documents Department


Description: In April 2007, the Department of Energy (DOE) designated the Advanced Test Reactor (ATR) a National Scientific User Facility (NSUF) to advance US leadership in nuclear science and technology. By attracting new users from universities, laboratories, and industry, the ATR will support basic and applied nuclear research and development and help address the nation's energy security needs. In support of this new program, the Idaho National Laboratory (INL) has developed in-house capabilities to fabricate, test, and qualify new and enhanced temperature sensors for irradiation testing. Although most efforts emphasize sensors capable of providing real-time data, selected tasks have been completed to enhance sensors provided in irradiation locations where instrumentation leads cannot be included, such as drop-in capsule and Hydraulic Shuttle Irradiation System (HSIS) or 'rabbit' locations. For example, silicon carbide (SiC) monitors are now available to detect peak irradiation temperatures between 200°C and 800°C. Using a resistance measurement approach, specialized equipment installed at INL's High Temperature Test Laboratory (HTTL) and specialized procedures were developed to ensure that accurate peak irradiation temperature measurements are inferred from SiC monitors irradiated at the ATR. Comparison examinations were completed by INL to demonstrate this capability, and several programs currently rely on SiC monitors for peak temperature detection. This paper discusses the use of SiC monitors at the ATR, the process used to evaluate them at the HTTL, and presents representative measurements taken using SiC monitors.
Date: July 1, 2012
Creator: Davis, K. L.; Chase, B.; Unruh, T.; Knudson, D. & Rempe, J. L.
Partner: UNT Libraries Government Documents Department

Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

Description: This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.
Date: September 1, 2013
Creator: Contescu, Cristian I
Partner: UNT Libraries Government Documents Department

KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor

Description: Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.
Date: November 29, 1999
Creator: Muntele, C.I.; Ila, D.; Williams, E.K.; Poker, D.B. & Hensley, D.K.
Partner: UNT Libraries Government Documents Department

Surface Intensive Materials Processing for Multi-Functional Purposes

Description: We have chosen silicon carbide (SiC) as a multi-functional material to demonstrate the application of surface intensive processing for device fabrication. We will highlight two devices which are produced in house at the Center for Irradiation of materials of Alabama A and M university: (A) High temperature electronic gas sensor, (B) High temperature optical properties/sensor.
Date: March 6, 2000
Creator: Ila, D.; Williams, E.K.; Muntele, C.I.; George, M.A.; Poker, D.B.; Hensley, D.K. et al.
Partner: UNT Libraries Government Documents Department

High Temperature Steam Corrosion of Cladding for Nuclear Applications: Experimental

Description: Stability of cladding materials under off-normal conditions is an important issue for the safe operation of light water nuclear reactors. Metals, ceramics, and metal/ceramic composites are being investigated as substitutes for traditional zirconium-based cladding. To support down-selection of these advanced materials and designs, a test apparatus was constructed to study the onset and evolution of cladding oxidation, and deformation behavior of cladding materials, under loss-of-coolant accident scenarios. Preliminary oxidation tests were conducted in dry oxygen and in saturated steam/air environments at 1000OC. Tube samples of Zr-702, Zr-702 reinforced with 1 ply of a ß-SiC CMC overbraid, and sintered a-SiC were tested. Samples were induction heated by coupling to a molybdenum susceptor inside the tubes. The deformation behavior of He-pressurized tubes of Zr-702 and SiC CMC-reinforced Zr-702, heated to rupture, was also examined.
Date: January 2013
Creator: McHugh, Kevin M.; Garnier, John E.; Rashkeev, Sergey; Glazoff, Michael V.; Griffith, George W. & Bragg-Sitton, Shannong M.
Partner: UNT Libraries Government Documents Department

Tritium Inventory in Aries-AT

Description: This report documents an investigation into the tritium inventory expected in the ARIES-AT fusion reactor. ARIES-AT features silicon carbide fibers in a silicon carbide matrix as its primary construction. It uses the same fusion power core as the previous ARIES-RS. Based on experimental results of several researchers, consideration was given to swelling, sputtering, film coatings, erosion, and implantation. Estimates were made of tritium inventory using the TMAP4 code. About 700 g of tritium may be expected in the machines, two thirds of which would reside in the first wall. Under assumed accident conditions that involve firs wall temperatures up to 1000°C, evolution of retained tritium may be expected to vary from 0.8 to nearly 40 percent depending on the temperature of the first wall.
Date: February 1, 2001
Creator: Longhurst, Glen Reed
Partner: UNT Libraries Government Documents Department

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

Description: A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can be used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.
Date: November 30, 2012
Creator: Chen, Cheng-Po; Shaddock, David; Sandvik, Peter; Saia, Rich; Amita Patil, Alexey Vert & Zhang, Tan
Partner: UNT Libraries Government Documents Department

Report on the deuterium retention in CVD coated W on SiC in support of the Ultramet Company’s Small Business Innovation Research (SBIR) project: SOW DE-FG02-07ER84941

Description: A tungsten (W) coated (0.0005-inch thickness) silicon carbide (SiC) (1.0-inch diameter and 0.19-inch thickness) sample was exposed to a divertor relevant high-flux (~1022 m-2s-1) deuterium plasma at 200 and 400°C in the Idaho National Laboratory’s (INL’s) Tritium Plasma Experiment (TPE), and the total deuterium retention was subsequently measured via the thermal desorption spectroscopy (TDS) method. The deuterium retentions were 6.4x1019 m-2 and 1.7x1020 m-2, for 200 and 400°C exposure, respectively. The Tritium Migration Analysis Program (TMAP) was used to analyze the measured TDS spectrum to investigate the deuterium behavior in the W coated SiC, and the results indicated that most of the deuterium was trapped in the W coated layer even at 400°C. This thin W layer (0.0005-inch ~ 13µm thickness) prevented deuterium ions from bombarding directly into the SiC substrate, minimizing erosion of SiC and damage creation via ion bombardment. The shift in the D desorption peak in the TDS spectra from 200 C to 400°C can be attributed to D migration to the bulk material. This unexpectedly low deuterium retention and short migration might be due to the porous nature of the tungsten coating, which can decrease the solution concentration of deuterium atoms.
Date: June 1, 2012
Creator: Shimada, Masashi
Partner: UNT Libraries Government Documents Department

Final Scientific Report

Description: The response of dielectric material to electromagnetic waves in the millimeter wavelength range (30 to 300 GHz) has received relatively little study and the processes that give rise to absorption in this region are often poorly understood. Understanding the origin of absorption at these wavelengths has basic significance for solid state physics as well as importance for development of technology in this region of the RF spectrum. This project has provided high-quality data on the temperature dependence of the dielectric loss in high-purity, semi-insulating silicon carbide (HPSI SiC), a material that holds much promise for application, especially in devices that must operate in the high power and high frequency regime. Comparison of this experimental data with theoretical predictions for various loss processes provides convincing evidence that the loss in HPSI SiC arises almost entirely from intrinsic lattice loss (ILL) as described by Garin. Fitting the data to this model yields an accurate value for the Debye temperature that characterizes crystalline SiC. In addition, our results refute a previous study(2) which reported much higher loss, attributed to the presence of free charge. The quality of the data acquired in this project is clear evidence for the value of the experimental technique that was employed here. This technique combines the excitation of a high-quality open resonator by a phase-locked backward wave oscillator (BWO) with use of a spectrum analyzer to measure the change in the resonator response curve when the sample is inserted. This system has demonstrated consistent results for very challenging measurements and does not suffer from the artifacts that often arise when using other techniques that rely on thermal sources. The low absorption loss found in HPSI SiC, when combined with its other outstanding material properties, e.g. high thermal conductivity, high tensile strength, and high carrier mobility, should provide incentive ...
Date: December 31, 2012
Creator: Jones, Charles R
Partner: UNT Libraries Government Documents Department

Synthesis and Analysis of Alpha Silicon Carbide Components for Encapsulation of Fuel Rods and Pellets

Description: The chemical, mechanical and thermal properties of silicon carbide (SiC) along with its low neutron activation and stability in a radiation field make it an attractive material for encapsulating fuel rods and fuel pellets. The alpha phase (6H) is particularly stable. Unfortunately, it requires very high temperature processing and is not readily available in fibers or near-net shapes. This paper describes an investigation to fabricate a-SiC as thin films, fibers and near-net-shape products by direct conversion of carbon using silicon monoxide vapor at temperatures less than 1700 C. In addition, experiments to nucleate the alpha phase during pyrolysis of polysilazane, are also described. Structure and composition were characterized using scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. Preliminary tensile property analysis of fibers was also performed.
Date: September 1, 2011
Creator: McHugh, Kevin M.; Garnier, John E. & Griffith, George W.
Partner: UNT Libraries Government Documents Department

Evaluations of University of Wisconsin Silicon Carbide Temperature Monitors 300 LO and 400 LO B

Description: Silicon carbide (SiC) temperature monitors 05R4-02-A KG1403 (300 LO) and 05R4-01-A KG1415 (400 LO B) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak irradiation temperatures. HTTL measurements indicate that the peak irradiation temperature for the 300 LO monitor was 295 {+-} 20 C and the peak irradiation temperature for the 400 LO B monitor was 294 {+-} 25 C. Two silicon carbide (SiC) temperature monitors irradiated in the Advanced Test Reactor (ATR) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak temperature during irradiation. These monitors were irradiated as part of the University of Wisconsin Pilot Project with a target dose of 3 dpa. Temperature monitors were fabricated from high density (3.203 g/cm3) SiC manufactured by Rohm Haas with a nominal size of 12.5 mm x 1.0 mm x 0.75 mm (see Attachment A). Table 1 provides identification for each monitor with an expected peak irradiation temperature range based on preliminary thermal analysis (see Attachment B). Post irradiation calculations are planned to reduce uncertainties in these calculated temperatures. Since the early 1960s, SiC has been used as a post-irradiation temperature monitor. As noted in Reference 2, several researchers have observed that neutron irradiation induced lattice expansion of SiC annealed out when the post-irradiation annealing temperature exceeds the peak irradiation temperature. As noted in Reference 3, INL uses resistivity measurements to infer peak irradiation temperature from SiC monitors. Figure 1 depicts the equipment at the HTTL used to evaluate the SiC monitors. The SiC monitors are heated in the annealing furnace using isochronal temperature steps that, depending on customer needs, can range from 50 to 800 C. This furnace is located under a ventilation hood within the stainless steel enclosure. The ventilation system is activated during heating so that any released vapors ...
Date: December 1, 2011
Creator: Davis, K. L.; Rempe, J. L.; Knudson, D. L.; Chase, B. M. & Unruh, T. C.
Partner: UNT Libraries Government Documents Department

Wide-Area Thermal Processing of Light-Emitting Materials

Description: Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is significant as higher thermal and electrical conductivities ...
Date: September 30, 2011
Creator: Duty, C. & Quick, N. (AppliCote Associates, LLC)
Partner: UNT Libraries Government Documents Department

Development of Radiation-Hardening Ceramic Composites for Fusion Applications

Description: This Progress Report describes work performed as a collaborative effort between Rensselaer Polytechnic Institute (RPI) and Oak Ridge National Laboratory (ORNL). This research is focused in four areas considered to be critical issues for using SiC fiber-reinforced SiC matrix composites (SiC/SiC) as structural materials in a fusion environment: (1) Calculation of the critical dose and temperature for amorphization of SiC by using the TRIM computer code to analyze ORNL and literature data; (2) Measurement of irradiation-induced creep in monolithic SiC or stoichiometric SiC fibers; (3) Determining the effects of high-temperature irradiation on monolithic SiC as part of ORNL's METS experiment; and (4) Gauging the effectiveness of polymer impregnation pyrolysis in improving SiC/SiC composite hermicity. Progress in each area is described, as well as plans for next year.
Date: August 31, 2004
Creator: Steiner, Don
Partner: UNT Libraries Government Documents Department

A Multi-Layered Ceramic Composite for Impermeable Fuel Cladding for COmmercial Wate Reactors

Description: A triplex nuclear fuel cladding is developed to further improve the passive safety of commercial nuclear plants, to increase the burnup and durablity of nuclear fuel, to improve the power density and economics of nuclear power, and to reduce the amount of spent fuel requiring disposal or recycle.
Date: March 3, 2008
Creator: Feinroth, Herbert
Partner: UNT Libraries Government Documents Department

Silicon Carbide Derived Carbons: Experiments and Modeling

Description: The main results of the computational modeling was: 1. Development of a new genealogical algorithm to generate vacancy clusters in diamond starting from monovacancies combined with energy criteria based on TBDFT energetics. The method revealed that for smaller vacancy clusters the energetically optimal shapes are compact but for larger sizes they tend to show graphitized regions. In fact smaller clusters of the size as small as 12 already show signatures of this ‘graphitization’. The modeling gives firm basis for the ‘slit-pore’ modeling of porous carbon materials and explains some of their properties. 2. We discovered small vacancy clusters and their physical characteristics that can be used to spectroscopically identify them. 3. We found low barrier pathways for vacancy migration in diamond-like materials by obtaining for the first time optimized reaction pathways.
Date: February 28, 2011
Creator: Kertesz, Miklos
Partner: UNT Libraries Government Documents Department

Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

Description: Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation
Date: October 29, 2001
Creator: DiBona, R. Suplinskas G. & Grant, W.
Partner: UNT Libraries Government Documents Department

High-temperature morphological evolution of lithographically introduced cavities in silicon carbide

Description: Internal cavities of controlled geometry and crystallography were introduced in 6H silicon carbide single crystals by combining lithographic methods, ion beam etching, and solid-state diffusion bonding. The morphological evolution of these internal cavities (negative crystals) in response to anneals of up to 128 h duration at 1900 degrees C was examined using optical microscopy. Surface energy anisotropy and faceting have a strong influence on both the geometric and kinetic characteristics of evolution. Decomposition of 12{bar 1}0 cavity edges into 101{bar 0} facets was observed after 16 h anneals, indicating that 12{bar 1}0 faces are not components of the Wulff shape. The shape evolution kinetics of penny-shaped cavities were also investigated. Experimentally observed evolution rates decreased much more rapidly with those predicted by a model in which surface diffusion is assumed to be rate-limiting. This suggests that the development of facets, and the associated loss of ledges and terraces during the initial stages of evolution results in an evolution process limited by the nucleation rate of attachment/detachment sites (ledges) on the facets.
Date: December 1, 2000
Creator: Narushima, Takayuki & Glaeser, Andreas M.
Partner: UNT Libraries Government Documents Department

Advanced Process Heater

Description: The Roadmap for Process Heating Technology (March 16, 2001), identified the following priority R&D needs: Improved performance of high temperature materials; Improved methods for stabilizing low emission flames; Heating technologies that simultaneously reduce emissions, increase efficiency, and increase heat transfer. This Category I award entitled ''Proof of Concept of an Advanced Process Heater (APH) for Steel, Aluminum, and Petroleum Industries of the Future'' met the technical feasibility goals of: (1) Doubling the heat transfer rates (2) Improving thermal efficiencies by 20%, (3) Improving temperature uniformity by 100 degrees F and (4) simultaneously reducing NOx and CO2 emissions. The APH address EERE's mission priority of increasing efficiency/reducing fuel usage in energy intensive industries. One component of the APH, the SpyroCorTM, was commercialized by STORM Development's partner, Spinworks LLC. Over 2000 SpyrCorsTM were sold in 2004 resulting in 480 million BTU's of energy savings, 20% reduction in NOx and CO2 levels, and 9 jobs in N.W. Pennsylvania. A second component, the HeatCorTM, a low-cost high-temperature heat exchanger will be demonstrated by Spinworks in 2005 in preparation for commercial sales in 2006. The project occurred in the 21st Congressional District of Pennsylvania. Once fully commercialized, the APH energy savings potential is 339 trillion BTUs annually in the U.S. and will process 1.5 million more tons annually without major capital equipment expenditures. Spinworks will commercialize the APH and add over 100 U.S. workers. To accomplish the objective, STORM Development LLC teamed with Penn State University, SyCore, Inc, Spinworks LLC, and Schunk-INEX, Inc. The project consisted of component engineering and integration of the APH followed by parametric testing. All components of the system were tested in a lab furnace that simulates a full scale industrial installation. The target areas for development include: (1) Scale up STORM's Finned Stabilized Combustion, (2) Optimization of SyCore's SiGr Inserts ...
Date: March 7, 2005
Creator: Tom Briselden, Chris Parrish
Partner: UNT Libraries Government Documents Department