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in subjects: "Semimetals 440101* -- Radiation Instrumentation-- General Detectors Or Monitors & Radiometric Instruments"

open access

Applications of a-Si:H radiation detectors

Device structures and operation principles are described for detecting various kinds of radiation with hydrogenated amorphous silicon (a-Si:H) layers. With some new configurations such as the buried p-i-n structure and the use of interdigitated electrodes, the a-Si:H radiation detectors will find their applications in many fields of science. Some applications in high energy physics, medical imaging, materials sciences and life sciences are discussed in this paper. 41 refs., 7 figs., 1 tab.

Date: July 1, 1989

Creator: Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S. N.; Perez-Mendez, V. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Some recent silicon detector spectroscopy applications at the Lawrence Berkeley Laboratory

The development and fabrication of specialized silicon detectors have long been an integral part of the LBL experimental capabilities. This silicon detector expertise utilizes two basic technologies, oxide-passivated diffused junction and lithium-ion drift. These technologies are complementary, with detectors of 10 {mu}m to 500 {mu}m thick fabricated using the diffused junction process and detectors 500 {mu}m to 10,000 {mu}m using the lithium-ion technique. Particle spectroscopy applications at… more

Date: October 1, 1990

Creator: Walton, J.T.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Epitaxial silicon semiconductor detectors, past developments, future prospects

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge def… more

Date: January 1, 1976

Creator: Gruhn, C. R.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Silicon Radiation Detectors: Materials and Applications

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfection… more

Date: October 1982

Creator: Walton, Jack T. & Haller, Eugene E.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

All epitaxial silicon diode heavy ion detector

An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm/sup 2/ and has a total thickness of 50 ..mu... The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed.

Date: January 1, 1976

Creator: Gruhn, C. R.; Goldstone, P. D. & Jarmie, N.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

X-ray and charged particle detection with CsI(Tl) layer coupled to a-Si:H photodiode layers

A compact real-time X-ray and charged particle imager with digitized position output can built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100--1000{mu}m thick were evaporated on glass substrates from a crystal CsI(Tl). When coupled to a crystalline Si or amorphous silicon (a-Si:H) photodiode and exposed to calibrated X-ray pulses, their light yields and speed were found to be comparable to those of a crystal CsI(… more

Date: October 1, 1990

Creator: Fujieda, I.; Cho, G.; Drewery, J.; Gee, T.; Jing, T.; Kaplan, S. N. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Detector materials: germanium and silicon

This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have … more

Date: November 1, 1981

Creator: Haller, E.E.

Item Type: Article

Partner: UNT Libraries Government Documents Department