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Picosecond degenerate four-wave mixing in semiconductors

Description: This study reports on a variety of experimental and theoretical studies conducted in ZnSe, CdTe, and in semiconductor-doped glasses. The transient picosecond degenerate four-wave mixing (DFWM) experiments performed in these II-VI direct-gap semiconductors are part of our efforts to understand the picosecond dynamics of the free-carriers generated via two and three-photon absorption.
Date: May 1990
Creator: Canto, Edesly J.
Partner: UNT Libraries

Quantum-Confined CdS Nanoparticles on DNA Templates

Description: As electronic devices became smaller, interest in quantum-confined semiconductor nanostructures increased. Self-assembled mesoscale semiconductor structures of II-VI nanocrystals are an especially exciting subject because of their controllable band gap and unique photophysical properties. Several preparative methods to synthesize and control the sizes of the individual nanocrystallites and the electronic and optical properties have been intensively studied. Fabrication of patterned nanostructures composed of quantum-confined nanoparticles is the next step toward practical applications. We have developed an innovative method to fabricate diverse nanostructures which relies on the size and a shape of a chosen deoxyribonucleic acid (DNA) template.
Date: May 1998
Creator: Rho, Young Gyu
Partner: UNT Libraries

U.S. Semiconductor Manufacturing: Industry Trends, Global Competition, Federal Policy

Description: This report provides background information on the Zika virus, discusses challenges faced by governments and implementing partners in the Latin America and Caribbean region that are attempting to control the ongoing outbreak, and analyzes these above issues in the context of the U.S. Zika response.
Date: June 27, 2016
Creator: Platzer, Michaela D. & Sargent, John F., Jr.
Partner: UNT Libraries Government Documents Department

Edmonds et al. Reply

Description: This article is a response to an article by M. Adell et al. [Phy. Rev. Lett. 94, 139701 (2005)] about semiconductor-based spintronics research.
Date: April 8, 2005
Creator: Edmonds, Kevin; Boguslawski, Piotr; Wang, K. Y.; Campion, Richard Paul; Novikov, Sergei; Farley, N. R. S. et al.
Partner: UNT College of Arts and Sciences

Metallic Nanodroplet Induced Coulomb Catalysis for Off-Resonant Plasmonic Enhancement of Photoemission in Semiconductors

Description: This article reports a new mechanism based on electrostatic interactions of carriers and their image charges in metals to generate more photons from optical sources at frequencies that are off-resonant to the localized plasmon frequency.
Date: April 8, 2016
Creator: Neogi, Arup; Grycznski, Karol G.; Llopis, A.; Lin, Jie; Main, Kyle; Shimada, Ryoko et al.
Partner: UNT College of Arts and Sciences

Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates

Description: The Semiconductor Industry Association (SIA) has identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusion barriers and adhesion promoters, is essential to achieve this goal. The objective of this research is to develop novel organic polymers as Cu/low-k interfacial layers and to investigate popular barrier candidates, such as clean and modified tantalum (Ta) substrates. Carbon-silicon (C-Si) polymeric films have been formed by electron beam bombardment or ultraviolet (UV) radiation of molecularly adsorbed vinyl silane precursors on metal substrates under ultra-high vacuum (UHV) conditions. Temperature programmed desorption (TPD) studies show that polymerization is via the vinyl groups, while Auger electron spectroscopy (AES) results show that the polymerized films have compositions similar to the precursors. Films derived from vinyltrimethyl silane (VTMS) are adherent and stable on Ta substrates until 1100 K. Diffusion of deposited Cu overlayers is not observed below 800 K, with dewetting occurred only above 400 K. Hexafluorobenzene moieties can also be incorporated into the growing film with good thermal stability. Studies on the Ta substrates demonstrate that even sub-monolayer coverages of oxygen or carbide on polycrystalline Ta significantly degrade the strength of Cu/Ta chemical interactions, and affect the kinetics of Cu diffusion into bulk Ta. On clean Ta, monolayer coverages of Cu will de-wet only above 600 K. A partial monolayer of adsorbed oxygen (3L O2 at 300 K) results in a lowering of the de-wetting temperature to 500 K, while saturation oxygen coverage (10 L O2, 300 K) results in de-wetting at 300 K. Carbide formation also lowers the de-wetting temperature to 300 K. Diffusion of Cu into the Ta substrate at 1100 K occurs only after a 5-minute induction period. This induction period increases ...
Date: December 1999
Creator: Chen, Li
Partner: UNT Libraries

An Adaptive Linearization Method for a Constraint Satisfaction Problem in Semiconductor Device Design Optimization

Description: The device optimization is a very important element in semiconductor technology advancement. Its objective is to find a design point for a semiconductor device so that the optimized design goal meets all specified constraints. As in other engineering fields, a nonlinear optimizer is often used for design optimization. One major drawback of using a nonlinear optimizer is that it can only partially explore the design space and return a local optimal solution. This dissertation provides an adaptive optimization design methodology to allow the designer to explore the design space and obtain a globally optimal solution. One key element of our method is to quickly compute the set of all feasible solutions, also called the acceptability region. We described a polytope-based representation for the acceptability region and an adaptive linearization technique for device performance model approximation. These efficiency enhancements have enabled significant speed-up in estimating acceptability regions and allow acceptability regions to be estimated for a larger class of device design tasks. Our linearization technique also provides an efficient mechanism to guarantee the global accuracy of the computed acceptability region. To visualize the acceptability region, we study the orthogonal projection of high-dimensional convex polytopes and propose an output sensitive algorithm for projecting polytopes into two dimensions.
Date: May 1999
Creator: Chang, Chih-Hui, 1967-
Partner: UNT Libraries


Description: Graphical and graphico-analytic methods were applied to the most common tunnel diode circuit configurations. The isocline method and a useful generalization of the Lienard Method were developed and applied, solutions and stability criteria were obtained by singular point analysis, and methods using linearized characteristics or simple graphical operations were applied. (auth)
Date: October 1, 1962
Creator: Roddick, R.G.
Partner: UNT Libraries Government Documents Department

Nonlinear Dynamics of Semiconductor Device Circuits and Characterization of Deep Energy Levels in HgCdTe by Using Magneto-Optical Spectroscopy

Description: The nonlinear dynamics of three physical systems has been investigated. Diode resonator systems are experimentally shown to display a period doubling route to chaos, quasiperiodic states, periodic locking states, and Hopf bifurcation to chaos. Particularly, the transition from quasiperiodic states to chaos in line-coupled systems agrees well with the Curry-Yorke model. The SPICE program has been modified to give realistic models for the diode resonator systems.
Date: May 1994
Creator: Yü, Chi
Partner: UNT Libraries

Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors

Description: The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.
Date: December 1975
Creator: Rater, Lonnie M.
Partner: UNT Libraries

Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate recoil effects of ions in ICs. These silicon or light ion recoils are usually produced by the elastic scattering or inelastic reactions between cosmic neutrons or protons and the lattice atoms in ICs. Specially designed test structures were experimentally studied, using microbeams produced at Sandia National Laboratories. A new technique, Diffusion Time Resolved IBICC, is first proposed in this work to measure the average arrival time of the diffused charge, which can be related to the first moment (or the average time) of the arrival carrier density at the junction. A 2D device simulation ...
Date: May 2000
Creator: Guo, Baonian
Partner: UNT Libraries


Description: A theoretical discussion is presented of the P-N junction theory and the junction transistor. A P-N juncion is where the two regions of a Ge crystal meet, one side of which is P-type, the other N-type. An NPN junction transistor consists of a single crystal, one end of which is N-type, a middle section which is P-type, and the composite end which is N-type. Silicon and Ge are the semiconductors commonly used. (W.L.H.)
Date: June 1, 1958
Creator: Leivo, W J
Partner: UNT Libraries Government Documents Department

Exciton and biexciton signatures in femotosecond transient absorption of {pi}-conjugated oligomers

Description: The authors report femotosecond transient-absorption studies of a five-ring oligomer of polyphenylenevinylene (PPV) prepared in two different forms: as solid-state films and dilute solutions. Both types of samples exhibit a photoinduced absorption (PA) band with dynamics which closely match those of the stimulated emission (SE), demonstrating unambiguously that these features originate from the same species, namely from intrachain singlet excitons. Photo-chemical degradation of the solid-state samples is demonstrated to dramatically shorten the SE dynamics above a moderate incident pump fluence, whereupon the dynamics of the SE and the long-wavelength PA no longer coincide. In contrast to solutions, solid-state films exhibit an additional short-wavelength PA band with pump-independent dynamics, indicating the efficient formation of non-emissive inter-chain excitons. Correlations in the subpicosecond dynamics of the two PA features, as well as the pump intensity-dependence provide strong evidence that the formation of inter-chain excitons is mediated by intrachain two-exciton states. At high pump levels, the authors see a clear indication of interaction between excited states also in dilute solutions. This is manifested as a superlinear pump-dependence and shortening of the decay dynamics of the SE. They attribute this behavior to the formation of biexcitons resulting from coherent interaction between two excitons on a single chain.
Date: October 1, 1997
Creator: Klimov, V.; McBranch, D.; Barashkov, N. & Ferraris, J.
Partner: UNT Libraries Government Documents Department

Environmental Stewardship: How Semiconductor Suppliers Help toMeet Energy-Efficiency Regulations and Voluntary Specifications inChina

Description: Recognizing the role that semiconductor suppliers can playin meeting energy-efficiency regulations and voluntary specifications,this paper provides an overview of Chinese policies and implementingbodies; a discussion of current programs, their goals, and effectiveness;and possible steps that can be taken tomeet these energy-efficiencyrequirements while also meeting products' high performance and costgoals.
Date: January 15, 2007
Creator: Aizhen, Li; Fanara, Andrew; Fridley, David; Merriman, Louise & Ju,Jeff
Partner: UNT Libraries Government Documents Department

Exciton dynamicsstudied via internal THz transitions

Description: We employ a novel, ultrafast terahertz probe to investigatethe dynamical interplay of optically-induced excitons and unboundelectron-hole pairs in GaAs quantum wells. Resonant creation ofheavy-hole excitons induces a new low-energy oscillator linked totransitions between the internal exciton degrees of freedom. The timeresolved terahertz optical conductivity is found to be a probe wellsuited for studies of fundamental processes such as formation, relaxationand ionization of excitons.
Date: February 26, 2003
Creator: Kaindl, R. A.; Hagele, D.; Carnahan, M. A.; Lovenich, R. & Chemla, D. S.
Partner: UNT Libraries Government Documents Department

Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Description: Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, semi-insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high-speed electronic applications. We use a novel transient-grating experimental method that allows picosecond temporal resolution and high sensitivity. Our results provide a clear and detailed picture of the picosecond photorefractive response of both materials, showing nonlinearities due to hot-carrier transport and the Dember space-charge field, and a long-lived nonlinearity that is due to the EL2 midgap species in GaAs. We numerically model our experimental results using a general set of equations that describe nonlinear diffraction and ...
Date: August 1999
Creator: Stark, Thomas S.
Partner: UNT Libraries