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Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

Description: We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.
Date: June 10, 2009
Creator: Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C. et al.
Partner: UNT Libraries Government Documents Department