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Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors

Description: The authors have fabricated high-efficiency thin-film CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).
Date: May 22, 2000
Creator: Bhattacharya, R. N.; Balcioglu, A.; Ramanathan, K. & Batchelor, W. K., Ahrenkiel, R. K.
Partner: UNT Libraries Government Documents Department