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A New Chromophoric Organic Molecule Toward Improved Molecular Optoelectronic Devices

Description: The characterization of 2,3,6,7,10,11-hexabromotriphenylene, Br6TP, is presented toward its potential use as an n-type organic semiconductor and metal-free room temperature phosphor. The crystal structure shows both anisotropic two-dimensional BrBr interactions and inter-layer ?-stacking interactions. Photophysical characteristics were evaluated using solid-state photoluminescence and diffuse reflectance spectroscopies, revealing significantly red-shifted excitations in the visible region for the yellow solid material (compared to ultraviolet absorption bands for the colorless dilute solutions). Correlation of spectral, electrochemical, and computational data suggest the presence of an n-type semiconducting behavior due to the electron-poor aromatic ring. The material shows excellent thermal stability as demonstrated by thermogravimetric analysis and infrared spectra of a thin film deposited by thermal evaporation. The potential for Br6TP and its analogues toward use in several types of photonic and electronic devices is discussed.
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Date: December 2012
Creator: Halbert, Jason Paul
Partner: UNT Libraries

Surface Plasmon Based Nanophotonic Optical Emitters

Description: Group- III nitride based semiconductors have emerged as the leading material for short wavelength optoelectronic devices. The InGaN alloy system forms a continuous and direct bandgap semiconductor spanning ultraviolet (UV) to blue/green wavelengths. An ideal and highly efficient light-emitting device can be designed by enhancing the spontaneous emission rate. This thesis deals with the design and fabrication of a visible light-emitting device using GaN/InGaN single quantum well (SQW) system with enhanced spontaneous emission. To increase the emission efficiency, layers of different metals, usually noble metals like silver, gold and aluminum are deposited on GaN/InGaN SQWs using metal evaporator. Surface characterization of metal-coated GaN/InGaN SQW samples was carried out using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Photoluminescence is used as a tool for optical characterization to study the enhancement in the light emitting structures. This thesis also compares characteristics of different metals on GaN/InGaN SQW system thus allowing selection of the most appropriate material for a particular application. It was found out that photons from the light emitter couple more to the surface plasmons if the bandgap of former is close to the surface plasmon resonant energy of particular metal. Absorption of light due to gold reduces the effective mean path of light emitted from the light emitter and hence quenches the quantum well emission peak compared to the uncoated sample.
Access: This item is restricted to the UNT Community Members at a UNT Libraries Location.
Date: December 2005
Creator: Vemuri, Padma Rekha
Partner: UNT Libraries

GeSi strained nanostructure self-assembly for nano- and opto-electronics.

Description: Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.
Date: July 1, 2001
Creator: Means, Joel L. & Floro, Jerrold Anthony
Partner: UNT Libraries Government Documents Department

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active nano-sized precipitates in silica to form the active layer of an opto-electronic device was achieved with ion implantation and thermal annealing. Three material systems were investigated. These systems consisted of carbon, silicon and metal silicide based nanocrystals. The physical morphology and electronic properties were monitored using a variety of material characterization techniques. Rutherford backscattering/channeling were used to monitor elemental concentrations, photoluminescence was used to monitor the opto-electronic properties and transmission electron microscopy was used to study the intricate morphology of individual precipitates. The electronic properties and the morphology were studied as a function of implant dose, anneal times and anneal ...
Date: May 2006
Creator: Mitchell, Lee
Partner: UNT Libraries

Theory and experimental study of surfactant effects on epitaxial growth of compound semiconductors.

Description: The work discussed in this report was supported by a Campus Fellowship LDRD. The report contains three papers that were published by the fellowship recipient and these papers form the bulk of his dissertation. They are reproduced here to satisfy LDRD reporting requirements.
Date: February 1, 2004
Creator: Wixom, Ryan R. (University of Utah, Salt Lake City, UT)
Partner: UNT Libraries Government Documents Department

Meso-/micro-optical system interface coupling solutions.

Description: Optoelectronic microsystems are more and more prevalent as researchers seek to increase transmission bandwidths, implement electrical isolation, enhance security, or take advantage of sensitive optical sensing methods. Board level photonic integration techniques continue to improve, but photonic microsystems and fiber interfaces remain problematic, especially upon size reduction. Optical fiber is unmatched as a transmission medium for distances ranging from tens of centimeters to kilometers. The difficulty with using optical fiber is the small size of the core (approximately 9 {micro}m for the core of single mode telecommunications fiber) and the tight requirement on spot size and input numerical aperture (NA). Coupling to devices such as vertical cavity emitting lasers (VCSELs) and photodetectors presents further difficulties since these elements work in a plane orthogonal to the electronics board and typically require additional optics. This leads to the need for a packaging solution that can incorporate dissimilar materials while maintaining the tight alignment tolerances required by the optics. Over the course of this LDRD project, we have examined the capabilities of components such as VCSELs and photodetectors for high-speed operation and investigated the alignment tolerances required by the optical system. A solder reflow process has been developed to help fulfill these packaging requirements and the results of that work are presented here.
Date: October 1, 2005
Creator: Armendariz, Marcelino G.; Kemme, Shanalyn A. & Boye, Robert R. (01713 Photonic Microsystems Technology)
Partner: UNT Libraries Government Documents Department

Molten salt-based growth of bulk GaN and InN for substrates.

Description: An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The novel techniques described herein rely on the production of the nitride precursor (N{sup 3-}) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (February 2006-September 2006) focused on establishing that mass transport of GaN occurs in molten LiCl, the construction of a larger diameter electrochemical cell, the design, modification, and installation of a made-to-order glove box (required for handling very hygroscopic LiCl), and the feasibility of using room temperature molten salts to perform nitride chemistry experiments.
Date: August 1, 2007
Creator: Waldrip, Karen Elizabeth
Partner: UNT Libraries Government Documents Department