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AlGaN Materials Engineering for Integrated Multi-Function Systems

Description: This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.
Date: January 1, 2001
Creator: HAN, JUNG; MITCHELL, CHRISTINE C.; WALDRIP, KAREN NMN; GUILINGER, TERRY R.; KELLY, MICHAEL J.; FLEMING, JAMES G. et al.
Partner: UNT Libraries Government Documents Department

Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy

Description: Metal organic vapour phase epitaxy (GaAs)1-x(Ge2)x alloy layers, 0<x<0.22, were grown at temperatures between 640 and 690 C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x {approx} 0.1 layers grown at 640 C, Ge segregation occurred on {l_brace}115{r_brace}B planes associated with a {l_brace}115{r_brace}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {l_brace}115{r_brace}B substrates resulted in a ''natural superlattice'' of GaAs/Ge along the growth direction.
Date: September 13, 1999
Creator: Norman, A. G.; Olson, J. M.; Geisz, J. F.; Moutinho, H. R.; Mason, A.; Al-Jassim, M. M. et al.
Partner: UNT Libraries Government Documents Department