Description: This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.
Date: January 1, 2001
Creator: HAN, JUNG; MITCHELL, CHRISTINE C.; WALDRIP, KAREN NMN; GUILINGER, TERRY R.; KELLY, MICHAEL J.; FLEMING, JAMES G. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department