Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint
Description:
We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carri…
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Date:
May 1, 2006
Creator:
Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L. et al.
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