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Changes of the local distortions and colossal magnetoresistive properties of La(0.7)Ca(0.3)MnO(3) induced by Ti or Ga defects

Description: The magnetoresistive properties of La0.7Ca0.3MnO3 change rapidly when Ti or Ga are substituted on the Mn site for concentrations, x, from 1 to 10 percent. The samples exhibit colossal magnetoresistance (CMR) and the resistivity increases dramatically with dopant concentration. The temperature of the resistivity peak, TR, shifts rapidly to lower temperatures with increasing x and the ferromagnetic transition broadens. However, the transition temperature, Tc, is only slightly suppressed. Consequently, TR occurs well below Tc for x above 2 percent. Investigations of these materials using Mn XAFS show that changes in the local structure, parametrized by the pair-distribution width, sigma, correlate well with Tc and the sample magnetization. For a given dopant, the resistivity peak occurs when sigma{sup 2} decreases below a critical value. Both dopants produce extended defects which increases the resistivity of the nearby materials considerably. The data suggest that even at x {approx}4 percent, most of the sites are slightly distorted at low T.
Date: July 12, 2002
Creator: Bridges, F.; Cao, D.; Anderson, M.; Ramirez, A.P.; Olapinski, M.; Subramanian, M.A. et al.
Partner: UNT Libraries Government Documents Department

GMR in intermetallics

Description: Typical examples of giant magnetoresistance (GMR) effects observed in intermetallic compounds at various conditions are reviewed and some comparisons with the GMR magnetic multilayer systems are shown. Possibilities of tuning material parameters desired for applications are discussed in context of present understanding of the mechanisms responsible for GMR in this class of materials. 18 refs.
Date: April 1, 1996
Creator: Sechowsky, V.; Havela, L.; Nakotte, H. & Brueck, E.
Partner: UNT Libraries Government Documents Department

Local and average crystal structure and displacements of La{sup 11}B{sub 6} and EuB{sub 6} as a function of temperature

Description: Measurements of both the average crystal structure from Rietveld refinement of neutron powder diffraction (NPD) data and the local structure from La L{sub III}-edge x-ray-absorption fine-structure (XAFS) are presented for a La{sup 11}B{sub 6} sample as a function of temperature ({approx}10-320 K). These data are compared to XAFS results on a EuB{sub 6} sample. The single-site La and B positional distribution widths and the La-B and La-La bond length distribution widths and their temperature dependence are compared. This comparison allows an estimate of the La and B site displacements, and we find that these sublattices are only slightly correlated with each other. Moreover, while the temperature dependence of the displacement parameters of the average sites from diffraction fit an Einstein model well, the temperature dependence of the La-B bond length distribution width requires at least two vibrational frequencies, corresponding to the La and B frequencies of the individual sites. XAFS data on EuB{sub 6} indicate that the situation is the same in the Eu compound. In addition, comparisons between data taken below and above the ferromagnetic transition temperature for EuB{sub 6} place stringent limits on the lattice involvement in the associated metal-insulator transition and the ensuing large magnetoresistance effect. This lack of lattice involvement in the magnetoresistance transition is in sharp contrast to the strong lattice involvement observed in the colossal magnetoresistance lanthanum manganese perovskites.
Date: January 30, 2001
Creator: Booth, C.H.; Sarrao, J.L.; Hundley, M.F.; Cornelius, A.L.; Kwei, G.H.; Bianchi, A. et al.
Partner: UNT Libraries Government Documents Department

First principles calculation of electrical conductivity and giant magnetroresistance of Co{vert_bar}Cu multilayers

Description: We show that the Kubo formula can be used to calculate the nonlocal electrical conductivity of layered systems from first principles. We use the Layer Korringa Kohn Rostoker method to calculate the electronic structure and Green function of Co/Cu/Co trilayers within the local density approximation to density functional theory. This Green function is used to calculate the conductivity through the Kubo formula for both majority and minority spins and for alignment and anti-alignment of the Co moments on either side of the Cu spacer layer. This allows us to determine the giant magnetoresistance from first principles. We investigate three possibilities for the scattering in Co/Cu/Co: (1) equal electron lifetimes for Cu, majority spin Co, and minority spin Co, (2) equal electron lifetimes for majority and minority Co, weaker scattering in Cu and spin dependent interfacial scattering, (3) electron lifetimes for majority and minority spin cobalt proportional to their Fermi energy densities of states and spin dependent interfacial scattering.
Date: December 31, 1995
Creator: Butler, W.H.; Zhang, X.G.; Nicholson, D.M.C. & MacLaren, J.M.
Partner: UNT Libraries Government Documents Department

Large GMR values of sputtered Co/Cu multilayer structures with Co-Cu buffer layers

Description: We demonstrate large giant magnetoresistance (GMR) values of Co/Cu multilayers (MLs) sputtered on combined Co18{angstrom}/Cu48{angstrom} buffer layer. GMR values at room temperature reach 62% at the first antiferromagnetically (AF) coupling peak and 33% at the 2nd AF coupled peak, which are very close to those found in Co/Cu MLs sputtered on a Fe buffer layer. The large GMR effect is attributed to the superior superlattice structure of these samples, as evidenced by the x-ray reflectivity data as well as the TEM micrographs. In particular, the role of thin Co initial layer deposited beneath the Cu buffer layer on improved ML structure has been clarified from cross-sectional micrographs of high-resolution TEM.
Date: February 29, 1996
Creator: Huai, Y.; Vernon, S.P.; Stearns, D.G.; Cerjan, C. & Kania, D.R.
Partner: UNT Libraries Government Documents Department

Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires

Description: We study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a < 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of their widths. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at ~6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
Date: April 27, 1999
Creator: Blount, M.A.; Lyo, S.K.; Moon, J.S.; Reno, J.L.; Simmons, J.A. & Wendt, J.R.
Partner: UNT Libraries Government Documents Department

CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

Description: Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.
Date: December 31, 2002
Creator: Saripalli, Ganesh
Partner: UNT Libraries Government Documents Department

Role of magnetic anisotropy in spin-filter junctions

Description: We have fabricated oxide-based spin-filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin-filter junctions. We have demonstrated spin-filtering behavior in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/CoCr{sub 2}O{sub 4}/Fe{sub 3}O{sub 4} and La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/MnCr{sub 2}O{sub 4}/Fe{sub 3}O{sub 4} junctions where the interface anisotropy plays a significant role in determining transport behavior. Detailed studies of chemical and magnetic structure at the interfaces indicate that abrupt changes in magnetic anisotropy across the nonisostructural interface is the cause of the significant suppression of junction magnetoresistance in junctions with MnCr{sub 2}O{sub 4} barrier layers.
Date: January 10, 2011
Creator: Chopdekar, R.V.; Wong, F.; Nelson-Cheeseman, B.B.; Liberati, M.; Arenholz, E. & Suzuki, Y.
Partner: UNT Libraries Government Documents Department

Time-resolved x-ray absorption spectroscopy of photoinduced insulator-metal transition in a colossal magnetoresistive manganite

Description: We studied the ultrafast insulator-metal transition in a manganite by means of picosecond X-ray absorption at the O K- and Mn L-edges, probing photoinduced changes in O-2p and Mn-3d electronic states near the Fermi level.
Date: August 1, 2008
Creator: Rini, M.; Tobey, R.; Wall, S.; Zhu, Y.; Tomioka, Y.; Tokura, Y. et al.
Partner: UNT Libraries Government Documents Department

Transient electronic structure of the photoinduced phase of Pr0.7Ca0.3MnO3 probed with soft x-ray pulses

Description: We use time-resolved x-ray absorption near-edge structure spectroscopy to investigate the electronic dynamics associated with the photoinduced insulator-to-metal phase transition in the colossal magnetoresistive manganite Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}. Absorption changes at the O K and Mn L edges directly monitor the evolution of the density of unoccupied states in the transient photoinduced phase. We show that the electronic structure of the photoinduced phase is remarkably similar to that of the ferromagnetic metallic phase reached in related manganites upon cooling below the Curie temperature.
Date: April 1, 2009
Creator: Rini, M.; Zhu, Y.; Wall, S.; Tobey, R. I.; Ehrke, H.; Garl, T. et al.
Partner: UNT Libraries Government Documents Department

Magnetic anisotropy, coupling and transport in epitaxial Co/Cr superlattices on MgO (100) and (110) substrates

Description: Superlattices of Co/Cr have been epitaxially sputtered onto MgO (100) and (110) substrates coated with Cr(100) and (211) buffer layers. The Co thickness is fixed at 20{angstrom} and the Cr thickness varied from 7 to 22{Angstrom}. On the MgO(110)/Cr(211) substrates, coherent hcp-Co(1{bar 1}00)/bcc-Cr(211) superlattice structures are formed. On MgO(100)/Cr(100), XRD suggest strained hcp-Co(11{bar 2})/bcc-Cr(100) superlattices. Magnetization measurements show fourfold magnetic in- plane anisotropy for the MgO(100) orientation and twofold for the MgO(110). By utilizing a simple model based on perpendicular uniaxial anisotropies, we have concluded that the fourfold anisotropy has its origin in the second-order uniaxial Co anisotropy energy. The antiferromagnetic interlayer coupling strength exhibits a maximum value of 0.15 erg/cm{sup 2} at a Cr thickness of 13{angstrom} in the MgO(110) orientation. The MgO(100) orientation exhibits its strongest coupling of 0.55 erg/cm{sup 3} at 10{angstrom} Cr thickness. Modest GMR values no larger than 3% are observed and we find no evidence of enhanced AMR effects recently reported for Co(1{bar 1}00)/Cr(211) superlattices.
Date: November 1996
Creator: Picconatto, J. J.; Pechan, M. J. & Fullerton, E. E.
Partner: UNT Libraries Government Documents Department

Synthesis, tailored microstructures and `colossal` magnetoresistance in oxide thin films

Description: We have grown La{sub 1-x}Sr{sub x}MnO{sub 3} films, using both pulsed laser deposition and a polymeric sol-gel route. These two growth techniques result in different microstructures, but in both cases the texture (epitaxy or polycrystallinity) can be controlled by choice of substrates and growth conditions. The crystallography and microstructure of these films were studied using XRD and high- resolution TEM. The magnetic/magnetotransport properties of these films are discussed in context of their growth and microstructural parameters.
Date: September 1, 1996
Creator: Krishnan, K.M.; Modak, A.R.; Ju, H. & Bandaru, P.
Partner: UNT Libraries Government Documents Department

Two-dimensional intrinsic and extrinsic ferromagnetic behavior of layered La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} single crystals

Description: The low-field magnetization M and susceptibility {chi} are reported for the two-layered Ruddleson-Popper phase SrO(La{sub 1{minus}x}Sr{sub x}MnO{sub 3}){sub 2} for x = 0.4 (denoted La{sub 1.2}Sr{sup 1.8}Mn{sub 2}O{sub 7}) with an in-plane magnetic easy axis. As T approaches the Curie temperature (T{sub C} = 116 K) on cooling, where the metal-insulator transition occurs in zero-field, {chi} diverges as H{sup {minus}1/{delta}{prime}}, with {delta}{prime} = 21 {+-} 5. Also, near an extrinsic Curie transition attributed to {approximately} 0.1% volume fraction of intergrowths at T* = 2.47T{sub C}, M scales as (1 {minus} T/T*){sup {beta}}, with {beta} = 0.25 {+-} 0.02. These results can be understood within the context of 2D XY models, and provide a new perspective of the layered manganites.
Date: June 6, 1997
Creator: Potter, C. D.; Swiatek, M.; Bader, S. D.; Argyriou, D.N.; Mitchell, J. F.; Miller, D. J. et al.
Partner: UNT Libraries Government Documents Department

Lattice effect in perovskite and pyrochlore CMR materials

Description: Colossal magnetoresistance (CMR) in doped La manganite thin films (La{sub 1-x}M{sub x}MnO{sub 3}, where M = divalent ion, either Ca or Pb) has been shown to result in a factor of 10{sup 6} suppression of the resistance. The driving force for the CMR transition is thought to be the double-exchange interaction. Many studies of both the crystal structure and the local structure of the La{sub 1-x}M{sub x}MnO{sub 3} (M = Ca, Sr, Ba, Pb) system have now been carried out. As expected, these systems all show a strong coupling of the lattice to the CMR transition. On the other hand, neutron diffraction and x-ray absorption for the Tl{sub 2}Mn{sub 2}O{sub 7} pyrochlore, which also exhibits CMR, shows no deviations from ideal stoichiometry, mixed valency, or Jahn-Teller distortions of the MnO{sub 6} octahedron. We present results of crystallographic and local structural studies of these two important classes of CMR materials, compare the differences in structural response, and discuss the implications of these findings to our understanding of these materials.
Date: September 1997
Creator: Kwei, G. H.; Argyriou, D. N.; Lawson, A. C.; Neumeier, J. J.; Thompson, J. D.; Billinge, S. J. L. et al.
Partner: UNT Libraries Government Documents Department

Short range spin correlations in the CMR material La{sub 1.41}Sr{sub 1.6}Mn{sub 2}O{sub 7}

Description: The (La{sub 1{minus}x}Sr{sub x}){sub 2}Mn{sub 3}O{sub 7} compounds are layered materials that exhibit higher magneto-resistance than the corresponding 3D manganite perovskites. Quasi-elastic neutron scattering on a polycrystalline sample of La{sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} shows that the spin fluctuation spectrum of these layered CMR materials is qualitatively similar to those found in the perovskite manganites (La,Ca)MnO{sub 3}; their concentration, lifetime, and coherence length increase as T decreases to {Tc}. Unlike the perovskites the authors found a lower spin-diffusion constant above {Tc} of {approximately} 5 meV {angstrom}{sup 2}.
Date: December 1, 1997
Creator: Kelley, T.M.; Argyriou, D.N.; Robinson, R.A.; Nakotte, H.; Mitchell, J.F.; Osborn, R. et al.
Partner: UNT Libraries Government Documents Department

A new type of magnetoresistance oscillations: Interaction of a two-dimensional electron gas with leaky interface phonons

Description: The authors report a new type of oscillations in magnetoresistance observed in high-mobility two-dimensional electron gas (2DEG), in GaAs-AIGaAs heterostructures. Being periodic in 1/B these oscillations appear in weak magnetic field (B &lt; 0.3 T) and only in a narrow temperature range (3 K &lt; T &lt; 7 K). Remarkably, these oscillations can be understood in terms of magneto-phonon resonance originating from the interaction of 2DEG and leaky interface-acoustic phonon modes. The existence of such modes on the GaAs:AIGaAs interface is demonstrated theoretically and their velocities are calculated. It is shown that the electron-phonon scattering matrix element exhibits a peak for the phonons carrying momentum q = 2k{sub F} (k{sub F} is the Fermi wave-vector of 2DEG).
Date: May 11, 2000
Creator: ZUDOV,M.A.; PONOMAREV,I.V.; EFROS,A.L.; DU,R.R.; SIMMONS,JERRY A. & RENO,JOHN L.
Partner: UNT Libraries Government Documents Department

Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field

Description: Photoluminescence upconversion (PLU) is a phenomenon in which a sample emits photons with energy higher than that of the excitation photon. This effect has been observed in many materials including rare earth ions doped in insulating hosts and semiconductor heterostructures without using high power lasers as the excitation source. Recently, this effect has been observed also in partially CuPt-ordered GaInP{sub 2} epilayers grown on GaAs substrates. As a spectroscopic technique photoluminescence upconversion is particularly well suited for studying band alignment at heterojunction interface. The value of band-offset has been determined with meV precision using magneto-photoluminescence. Using the fact that the pressure coefficient of electrons in GaAs is higher than those in GaInP{sub 2} they have been able to manipulate the band-offset at the GaInP/GaAs interface. By converting the band-offset from Type I to Type II they were able to demonstrate that the efficiency of the upconversion process is greatly enhanced by a Type II band-offset.
Date: December 31, 2000
Creator: Yu, P.Y.; Martinez, G.; Zeman, J. & Uchida, K.
Partner: UNT Libraries Government Documents Department

Structural and magnetic states in layered manganites: An expanding view of the phase diagram

Description: Colossal magnetoresistive (CMR) manganites display a spectacular range of structural, magnetic, and electronic phases as a function of hole concentration, temperature, magnetic field, etc. A1though the bulk of research has concentrated on the 3-D perovskite manganites, the ability to study anisotropic magnetic and electronic interactions made available in reduced dimensions has accelerated interest in the layered Ruddlesden-Popper (R-P) phases of the manganite class. The quest for understanding the coupling among lattice, spin, and electronic degrees of freedom (and dimensionality) is driven by the availability of high quality materials. In this talk, the authors will present recent results on synthesis and magnetic properties of layered manganites from the La{sub 2{minus}2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7} series in the Mn{sup 4+}-rich regime x &gt;0.5. This region of the composition diagram is populated by antiferromagnetic structures that evolve from the A-type layered order to G-type ''rocksalt'' order as x increases. Between these two regimes is a wide region (0.7 &lt; x &lt; 0.9) where an incommensurate magnetic structure is observed. The IC structure joins spin canting and phase separation as a mode for mixed-valent manganites to accommodate FM/AF competition. Transport in these materials is dominated by highly insulating behavior, although a region close to x = 0.5 exhibits metal-nonmetal transitions and an extreme sensitivity to oxygen content. They suggest two possible explanations for this transport behavior at doping just above x = O.5: localization by oxygen defects or charge ordering of Mn{sup 3+}/Mn{sup 4+}sites.
Date: January 5, 2000
Creator: Mitchell, J. F.; Millburn, J. E.; Ling, C.; Argyriou, D. N. & Bordallo, H. N.
Partner: UNT Libraries Government Documents Department

Enhanced spin-valve giant magneto-resistance in non-exchange biased sandwich films

Description: A large giant magnetoresistance (GMR) value of 7.5% has been measured in simple NiFeCo(1)/Cu/NiFeCo(2) sandwich films grown on a 30 {angstrom} Cr seed layer. This spin-valve GMR effect is consistent with the differential switching of the two NiFeCo layers due to an enhanced coercivity of the NiFeCo(1) layer grown on the Cr seed layer. A change in growth texture of the NiFeCo(1) layer from fcc (111) to bcc (110) crystallographic orientation leads to an increase in magnetic anisotropy and an enhancement in coercivity. The GMR value increases to 8.7% when a thin CoFe interfacial enhancing layer is incorporated. Further enhancement in GMR values up to 14% is seen in the sandwich films by nano-oxide layer formation. The specular reflection at oxide/magnetic layer interface further extends the mean free path of spin-polarized electrons.
Date: February 17, 2000
Creator: Mao, M; Cerjan, C; Law, B; Grabner, F; Miloslavsky, L & Chien, C
Partner: UNT Libraries Government Documents Department

Unusual magnetic quantum oscillations in organic metals at high magnetic fields

Description: The authors report on Shubnikov-de Haas (SdH) and de Haas-van Alphen (dHvA) results for the highly two-dimensional (2D) organic superconductors {kappa}-(ET){sub 2}I{sub 3} ({Tc} = 3.5 K) and {beta}{double_prime}-(ET){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3} ({Tc} = 4.4 K). The SdH oscillations of both materials show an apparent deviation from the well-understood 2D dHvA signal at low temperatures and high magnetic fields. For {kappa}-(ET){sub 2}I{sub 3}, the mechanism leading to this behavior still needs to be clarified. For {beta}{double_prime}-(ET){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3}, an anomalous steady background part of the magnetoresistance seems to account for the observed discrepancies.
Date: April 4, 2000
Creator: Wosnitza, J.; Wanka, S.; Hagel, J.; Qualls, J. S.; Brooks, J. S.; Balthes, E. et al.
Partner: UNT Libraries Government Documents Department

Magnetic modulations of optical and transport properties of N-doped coupled double quantum wells

Description: Magnetoquantum resistance (MR) in a perpendicular magnetic field (B{sub {perpendicular}}) and photoluminescence (PL) spectra are shown to be sensitively modulated by an in-plane field (B{sub {parallel}}) due to the B{sub {parallel}}-induced anticrossing of the energy-dispersion curves of the two quantum wells (QWs). Using a self-consistent density functional theory, they find very different B{sub {parallel}}-evolutions of the PL spectra for symmetric and asymmetric double QWs consistent with recent data. The MR is calculated using a linear response theory. The results consist of a superposition of two series of MR oscillations represented by ridges running nearly perpendicular to each other in the B = (B{sub {parallel}}, B{sub {perpendicular}}) plane. The data from GaAs/AlGaAs double QWs agree with this behavior.
Date: August 1, 1998
Creator: Lyo, S.K.; Simmons, J.A.; Huang, D. & Harff, N.E.
Partner: UNT Libraries Government Documents Department

Grain boundary structures in La{sub 2/3}Ca{sub 1/3}MnO{sub 3} thin films

Description: As with many other oxide-based compounds that exhibit electronic behavior, structural defects have a strong influence on the electronic properties of the CMR manganites. In this work, the authors have studied the effect of grain boundaries on the transport properties and on the local orientation of magnetization. Thin films of the perovskite-related La{sub 2/3}Ca{sub 1/3}MnO{sub 3} compound were deposited onto bicrystal substrates using pulsed laser deposition. Transport measurements showed some enhancement of magnetoresistance across the grain boundary. The structure of the boundary was evaluated by electron microscopy. In contrast with the highly meandering boundaries typically observed in bicrystals of high temperature superconductors, the boundaries in these films are relatively straight and well defined. However, magneto-optical imaging showed that the local magnetization was oriented out of the plane at the grain boundary while it was oriented within the plane in the grains on either side. This coordinated reorientation of local magnetization near the grain boundary leads to enhanced magnetoresistance across the boundary in low fields.
Date: October 26, 1999
Creator: Miller, D. J.; Lin, Y.-K.; Vlasko-Vlasov, V. & Welp, U.
Partner: UNT Libraries Government Documents Department