Technical report on task orders no. B239703 and B239705: Development of technology of Al-free high-power laser diodes
Description: Our investigations of InGaAsP/GaAs system have shown that it is in many ways superior to the conventional AlGaAs/GaAs system. Lasers fabricated from InGaAsP/GaAs exhibit low facet overheating, high efficiency, good degradation characteristics, and high catastrophic optical damage (COD) limit. Our postgrowth technology provides stripe- contact lasers having very low series resistance and, therefore, high electrical-to-optical efficiency.
Date: June 1, 1996
Creator: Alferov, Zh.I. & Tarasov, I.S.
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