Characterizing Composition Modulations in InAs/AIAs Short-Period Superlattices
Description:
The formation of quantum wires has much interest due to their novel electronic properties which may lead to enhanced optoelectronic device performance and greater photovoltaic efficiencies. One method of forming these structures is through spontaneous lateral modulation found during the epitaxial growth of III/V alloys. In this paper, we report and summarize our investigations on the formation of lateral moduation in the MBE grown InAlAs/InP(001) system. This system was grown as a short-period …
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Date:
April 26, 1999
Creator:
Ahrenkiel, S. P.; Follstaedt, D. M.; Jones, E. D.; Lee, S. R.; Mascarenhas, A.; Mirecki-Millunchick, J. et al.
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