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Demonstration of LED Street Lighting in Kansas City, MO

Description: Nine different streetlighting products were installed on various streets in Kansas City, Missouri during February, 2011, to evaluate their performance relative to the incumbent high-pressure sodium (HPS) lighting. The applications investigated included 100 W, 150 W, 250 W, and 400 W HPS installations. Initial measurements and comparisons included power, illuminance, and luminance; sample illuminance readings have continued at each of the nine locations at roughly 1,000-hour operating intervals since then. All of the LED products consumed less power than their HPS counterparts—with a mean difference of 39% and a range of 31% to 51%—but they also emitted 31% fewer lumens, on average. The net result is just a 15% increase in mean efficacy. Applying the city’s stringent light loss factors to the initial measured data meant that five of the LED products (and two of the HPS luminaires) were predicted to eventually fail to meet the specified mean illuminance over their lifetimes; however, the specified light loss levels are not expected to be reached by the LED products until some distant future date (between 12 and 30 years after installation according to manufacturer specification sheet estimates). The practical value of designing streetlighting systems to meet illumination requirements more than 15 years in the future is questioned. Numerous sources of variation in field measurements are noted throughout the report, particularly seasonal influences such as ambient temperature and foliage that are evident in the time-series illuminance data.
Date: June 10, 2013
Creator: Kinzey, Bruce R.; Royer, Michael P.; Hadjian, M. & Kauffman, Rick
Partner: UNT Libraries Government Documents Department

Simplified models for mask roughness induced LER

Description: The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.
Date: February 21, 2011
Creator: McClinton, Brittany & Naulleau, Patrick
Partner: UNT Libraries Government Documents Department

Growth of laser damage in fused silica: diameter to depth ratio

Description: Growth of laser initiated damage plays a major role in determining optics lifetime in high power laser systems. Previous measurements have established that the lateral diameter grows exponentially. Knowledge of the growth of the site in the propagation direction is also important, especially so when considering techniques designed to mitigate damage growth, where it is required to reach all the subsurface damage. In this work, we present data on both the diameter and the depth of a growing exit surface damage sites in fused silica. Measured growth rates with both 351 nm illumination and with combined 351 nm and 1054 nm illumination are discussed.
Date: October 29, 2007
Creator: Norton, M A; Adams, J J; Carr, C W; Donohue, E E; Feit, M D; Hackel, R P et al.
Partner: UNT Libraries Government Documents Department

Direct to Digital Holography

Description: In this CRADA, Oak Ridge National Laboratory (ORNL) assisted nLine Corporation of Austin, TX in the development of prototype semiconductor wafer inspection tools based on the direct-to-digital holographic (DDH) techniques invented at ORNL. Key components of this work included, development of the first prototype named the Visible Alpha Tool (VAT) that uses visible spectrum illumination of 532 nm, assist in design of second prototype tool named the DUV Alpha Tool (DAT) using deep UV (266 nm) illumination, and continuing support of nLine in the development of higher throughput commercial tools.
Date: June 15, 2003
Creator: Bingham, P.R. & Tobin, K.W.
Partner: UNT Libraries Government Documents Department

Mask roughness induced LER: a rule of thumb -- paper

Description: Much work has already been done on how both the resist and line-edge roughness (LER) on the mask affect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and currently factor into LER limits. Here, we propose a 'rule-of-thumb' simplified solution that provides a fast and powerful method to obtain mask roughness induced LER. We present modeling data on an older generation mask with a roughness of 230 pm as well as the ultimate target roughness of 50 pm. Moreover, we consider feature sizes of 50 nm and 22 nm, and show that as a function of correlation length, the LER peaks at the condition that the correlation length is approximately equal to the resolution of the imaging optic.
Date: March 12, 2010
Creator: McClinton, Brittany & Naulleau, Patrick
Partner: UNT Libraries Government Documents Department

Iterative procedure for in-situ EUV optical testing with an incoherent source

Description: We propose an iterative method for in-situ optical testing under partially coherent illumination that relies on the rapid computation of aerial images. In this method a known pattern is imaged with the test optic at several planes through focus. A model is created that iterates through possible aberration maps until the through-focus series of aerial images matches the experimental result. The computation time of calculating the through-focus series is significantly reduced by a-SOCS, an adapted form of the Sum Of Coherent Systems (SOCS) decomposition. In this method, the Hopkins formulation is described by an operator S which maps the space of pupil aberrations to the space of aerial images. This operator is well approximated by a truncated sum of its spectral components.
Date: December 1, 2009
Creator: Miyawaka, Ryan; Naulleau, Patrick & Zakhor, Avideh
Partner: UNT Libraries Government Documents Department

Tilt sensitivity of the two-grating interferometer

Description: Fringe formation in the two-grating interferometer is analyzed in the presence of a small parallelism error between the diffraction gratings assumed in the direction of grating shear. Our analysis shows that with partially coherent illumination, fringe contrast in the interference plane is reduced in the presence of nonzero grating tilt with the effect proportional to the grating tilt angle and the grating spatial frequencies. Our analysis also shows that for a given angle between the gratings there is an angle between the final grating and the interference plane that optimizes fringe contrast across the field.
Date: January 30, 2008
Creator: Anderson, Christopher N. & Naulleau, Patrick P.
Partner: UNT Libraries Government Documents Department

The Use of Simulation for the Design and Analysis of Thermophotovoltaic Networks

Description: Simulation has provided valuable quantification of the fundamental behavior of thermophotovoltaic cell networks. The results of simulation studies have supported the design and fabrication of small-scale demonstration networks and are expected to guide assembly of large-scale systems. This paper describes the methodology and software simulator developed to address issues in thermophotovoltaic (TPV) networking, including failure analysis, electrical network design, and nonuniform illumination. Results from simulation studies are given illustrating their application to the design and fabrication of small-scale TPV arrays.
Date: July 20, 2004
Creator: Oppenlander, JE; Vell, JL; Gaes, WS; Siganporia, DM; Danielson, LR & Dashiell, MW
Partner: UNT Libraries Government Documents Department

Controlled-aperture wave-equation migration

Description: We present a controlled-aperture wave-equation migration method that no1 only can reduce migration artiracts due to limited recording aperlurcs and determine image weights to balance the efl'ects of limited-aperture illumination, but also can improve thc migration accuracy by reducing the slowness perturbations within thc controlled migration regions. The method consists of two steps: migration aperture scan and controlled-aperture migration. Migration apertures for a sparse distribution of shots arc determined using wave-equation migration, and those for the other shots are obtained by interpolation. During the final controlled-aperture niigration step, we can select a reference slowness in c;ontrollecl regions of the slowness model to reduce slowncss perturbations, and consequently increase the accuracy of wave-equation migration inel hods that makc use of reference slownesses. In addition, the computation in the space domain during wavefield downward continuation is needed to be conducted only within the controlled apertures and therefore, the computational cost of controlled-aperture migration step (without including migration aperture scan) is less than the corresponding uncontrolled-aperture migration. Finally, we can use the efficient split-step Fourier approach for migration-aperture scan, then use other, more accurate though more expensive, wave-equation migration methods to perform thc final controlled-apertio.ee migration to produce the most accurate image.
Date: January 1, 2003
Creator: Huang, L. (Lian-Jie); Fehler, Michael C.; Sun, H. (Hongchuan) & Li, Z. (Zhiming)
Partner: UNT Libraries Government Documents Department

Nonuniformity for rotated beam illumination in directly driven heavy-ion fusion

Description: A key issue in heavy-ion beam inertial confinement fusion is target interaction, especially implosion symmetry. In this paper the 2D beam irradiation nonuniformity on the surface of a spherical target is studied. This is a first step to studies of 3D dynamical effects on target implosion. So far non-rotated beams have been studied. Because normal incidence may increase Rayleigh-Taylor instabilities, it has been suggested to rotate beams (to increase average uniformity) and hit the target tangentially. The level of beam irradiation uniformity, beam spill and normal incidence is calculated in this paper. In Mathematica the rotated beams are modeled as an annular integrated Gaussian beam. To simplify the chamber geometry, the illumination scheme is not a 4{pi} system, but the beams are arranged on few polar rings around the target. The position of the beam spot rings is efficiently optimized using the analytical model. The number of rings and beams, rotation radii and widths are studied to optimize uniformity and spilled intensity. The results demonstrate that for a 60-beam system on four rings Peak-To-Valley nonuniformities of under 0.5% are possible.
Date: January 2, 2009
Creator: Runge, J. & Logan, B.G.
Partner: UNT Libraries Government Documents Department

The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch

Description: Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks, One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET, Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below, This resolution was achieved in a new imageable hard mask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists, Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4,0 nm, We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3x improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness), Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond, The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.
Date: March 18, 2010
Creator: Naulleau, P.; Anderson, C. N.; Backlea-an, L.-M.; Chan, D.; Denham, P.; George, S. et al.
Partner: UNT Libraries Government Documents Department

Improving Image Quality and Reducing Drift Problems via Automated Data Acquisition and Averaging in Cs-corrected TEM

Description: Image acquisition with a CCD camera is a single-press-button activity: after selecting exposure time and adjusting illumination, a button is pressed and the acquired image is perceived as the final, unmodified proof of what was seen in the microscope. Thus it is generally assumed that the image processing steps of e.g., 'dark-current correction' and 'gain normalization' do not alter the information content of the image, but rather eliminate unwanted artifacts. Image quality therefore is, among a long list of other parameters, defined by the dynamic range of the CCD camera as well as the maximum allowable exposure time depending on sample drift (ignoring sample damage). Despite the fact that most microscopists are satisfied with present, standard image quality we found that it is a relatively easy to improve on existing routines in at least two aspects: (1) Suppression of lateral image drift during acquisition by using significantly shorter exposure times with a plurality of exposures (3D-data set); and (2) Improvement in the Signal/Noise ratio by averaging over a given data set by exceeding the dynamic range of the camera.
Date: August 29, 2008
Creator: Voelkl, E; Jiang, B; Dai, Z R & Bradley, J P
Partner: UNT Libraries Government Documents Department

Extreme ultraviolet lithography: A few more pieces of the puzzle

Description: The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology. Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing. Photoresist. Two new methods of quantifying the deprotection blur of EUV photoresists are described and experimentally demonstrated. The deprotection blur, LER, and sensitivity parameters of several EUV photoresists are quantified simultaneously as base weight percent, photoacid generator (PAG) weight percent, and post-exposure bake (PEB) temperature are varied. Two surprising results are found: (1) changing base weight percent does not significantly affect the deprotection blur of EUV photoresist, and (2) increasing PAG weight percent can simultaneously reduce LER and E-size in EUV photoresist. The latter result motivates the development of an EUV exposure statistics model that includes the effects of photon shot noise, the PAG spatial distribution, and the changing of the PAG distribution during the exposure. In addition, a shot noise + deprotection blur model is used to show that as deprotection blur becomes large relative to the size of the printed feature, LER reduction from improved counting statistics becomes dominated by an increase in LER due to reduced deprotection contrast. Metrology. Finally, this dissertation describes MOSAIC, a new wavefront metrology that enables complete wavefront recovery from print or aerial image ...
Date: May 20, 2009
Creator: Anderson, Christopher N.
Partner: UNT Libraries Government Documents Department

Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications

Description: Line-edge roughness (LER) and the related effect of contact size variation remain as significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. LER is typically viewed as a resist problem; however, recent simulation results have shown that the mask can indeed be an important contributor. Problems arise from both mask absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam (see Fig. 1). The latter effect is especially important as higher coherence off-axis illumination conditions are used and defocus is considered. Here we describe these effect in detail and explore how they will impact EUV mask requirements for the 22-nm half-pitch node and beyond. Figure 2 shows modeling results for 22-nm lines printed in a 0.32-numerical aperture system with 100-nm defocus assuming a mask with 0.24-nm rms multilayer roughness and no absorber edge roughness (unlike the example in Fig. 1). The impact of the phase roughness on the printed line-edge roughness is clearly evident and demonstrates the basic problem with mask roughness. The more detailed modeling-based analysis to be presented will account for performance throughout the process window as well as non-stochastic resist effects. We note that the mean-field resist effect is important to consider because, in practice, the resist is the limiting resolution element in the system and therefore dominates the mask-error enhancement factor (MEEF). As is typically the case with projection-optic-induced MEEF, the resist-induced MEEF will lead to even tighter mask requirements. Note that we do not consider resist stochastic effects since the purpose of this study is isolate mask-induced sources of image-plane roughness.
Date: February 13, 2009
Creator: Naulleau, P. P. & George, Simi A.
Partner: UNT Libraries Government Documents Department

Pushing EUV lithography development beyond 22-nm half pitch

Description: Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here we investigate the possibilities and limitations of using the 0.3-NA MET for sub-22-nm half-pitch development. We consider mask resolution limitations and present a method unique to the centrally obscured MET allowing these mask limitations to be overcome. We also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3-NA, the 0.5 k1 factor resolution limit is 22.5 nm meaning that conventional illumination is of limited utility for sub-22-nm development. In general resolution enhancing illumination encompasses increased coherence. We study the effect of this increased coherence on line-edge roughness, which along with resolution is another crucial factor in sub-22-nm resist development.
Date: June 30, 2009
Creator: Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al.
Partner: UNT Libraries Government Documents Department

Mask roughness induced LER: geometric model at long correlation lengths

Description: Collective understanding of how both the resist and line-edge roughness (LER) on the mask affect the final printed LER has made significant advances. What is poorly understood, however, is the extent to which mask surface roughness couples to image plane LER as a function of illumination conditions, NA, and defocus. Recently, progress has been made in formulating a simplified solution for mask roughness induced LER. Here, we investigate the LER behavior at long correlation lengths of surface roughness on the mask. We find that for correlation lengths greater than 3/NA in wafer dimensions and CDs greater than approximately 0.75/NA, the previously described simplified model, which remains based on physical optics, converges to a 'geometric regime' which is based on ray optics and is independent of partial coherence. In this 'geometric regime', the LER is proportional to the mask slope error as it propagates through focus, and provides a faster alternative to calculating LER in contrast to either full 2D aerial image simulation modeling or the newly proposed physical optics model. Data is presented for both an NA = 0.32 and an NA = 0.5 imaging system for CDs of 22-nm and 50-nm horizontal-line-dense structures.
Date: February 11, 2011
Creator: McClinton, Brittany M. & Naulleau, Patrick P.
Partner: UNT Libraries Government Documents Department

Inspection 13.2 nm table-top full-field microscope

Description: We present results on a table-top microscope that uses an EUV stepper geometry to capture full-field images with a halfpitch spatial resolution of 55 nm. This microscope uses a 13.2 nm wavelength table-top laser for illumination and acquires images of reflective masks with exposures of 20 seconds. These experiments open the path to the realization of high resolution table-top imaging systems for actinic defect characterization.
Date: February 23, 2009
Creator: Brizuela, F.; Wang, Y.; Brewer, C. A.; Pedaci, F.; Chao, W.; Anderson, E. H. et al.
Partner: UNT Libraries Government Documents Department

Design and fabrication of advanced EUV diffractive elements

Description: As extreme ultraviolet (EUV) lithography approaches commercial reality, the development of EUV-compatible diffractive structures becomes increasingly important. Such devices are relevant to many aspects of EUV technology including interferometry, illumination, and spectral filtering. Moreover, the current scarcity of high power EUV sources makes the optical efficiency of these diffractive structures a paramount concern. This fact has led to a strong interest in phase-enhanced diffractive structures. Here we describe recent advancements made in the fabrication of such devices.
Date: November 16, 2003
Creator: Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H. & Gullikson, Eric M.
Partner: UNT Libraries Government Documents Department

EUVL mask substrate specifications (wafer-type)

Description: The Extreme Ultraviolet Lithography (EUVL) program currently is constructing an alpha-class exposure tool known as the Engineering Test Stand (ETS) that will employ 200mm wafer format masks. This report lists and explains the current specifications for the EUVL mask substrates suitable for use on the ETS. The shape and size of the mask are the same as those of a standard 200mm Si wafer. The flatness requirements are driven by the potential image placement distortion caused by the non-telecentric illumination of EUVL. The defect requirements are driven by the printable-defect size and desired yield for mask blank fabrication. Surface roughness can cause both a loss of light throughput and image speckle. The EUVL mask substrate must be made of low-thermal-expansion material because 40% of the light is absorbed by the multilayers and causes some uncorrectable thermal distortion during printing.
Date: July 1, 1999
Creator: Tong, W
Partner: UNT Libraries Government Documents Department

Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

Description: GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.
Date: April 1, 2011
Creator: J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman
Partner: UNT Libraries Government Documents Department

Basic Research Needs for Solid-State Lighting. Report of the Basic Energy Sciences Workshop on Solid-State Lighting, May 22-24, 2006

Description: The workshop participants enthusiastically concluded that the time is ripe for new fundamental science to beget a revolution in lighting technology. SSL sources based on organic and inorganic materials have reached a level of efficiency where it is possible to envision their use for general illumination. The research areas articulated in this report are targeted to enable disruptive advances in SSL performance and realization of this dream. Broad penetration of SSL technology into the mass lighting market, accompanied by vast savings in energy usage, requires nothing less. These new ?good ideas? will be represented not by light bulbs, but by an entirely new lighting technology for the 21st century and a bright, energy-efficient future indeed.
Date: May 24, 2006
Creator: Phillips, J. M.; Burrows, P. E.; Davis, R. F.; Simmons, J. A.; Malliaras, G. G.; So, F. et al.
Partner: UNT Libraries Government Documents Department

A method for simulatingthe performance of photosensor-basedlighting controls

Description: The unreliability of photosensor-based lighting controlscontinues to be a significant market barrier that prevents widespreadacceptance of daylight dimming controls in commercial buildings. Energysavings from the use of daylighting in commercial buildings is bestrealized through the installation of reliable photoelectric lightingcontrols that dim electric lights when sufficient daylight is availableto provide adequate background and/or task illumination. In prior work,the authors discussed the limitations of current simulation approachesand presented a robust method to simulate the performance ofphotosensor-based controls using an enhanced version of the Radiancelighting simulation package. The method is based on the concept ofmultiplying two fisheye images: one generated from the angularsensitivity of the photosensor and the other from a 180- or 360-degreefisheye image of the space as "seen" by the photosensor. This paperincludes a description of the method, its validation and possibleapplications for designing, placing, calibrating and commissioningphotosensor-based lighting controls.
Date: October 1, 2000
Creator: Ehrlich, Charles; Papamichael, Konstantinos; Lai, Judy & Revzan,Kenneth
Partner: UNT Libraries Government Documents Department

The Impact of Overhang Design on the Performance of ElectrochromicWindows

Description: In this study, various facade designs with overhangs combined with electrochromic window control strategies were modeled with a prototypical commercial office building in a hot and cold climate using the DOE 2.1E building energy simulation program. Annual total energy use (ATE), peak electric demand (PED), average daylight illuminance (DI), and daylight glare index (DGI) were computed and compared to determine which combinations of fagade design and control strategies yielded the greatest energy efficiency, daylight amenity, and visual comfort.
Date: August 1, 2005
Creator: Tavil, Aslihan & Lee, Eleanor S.
Partner: UNT Libraries Government Documents Department

ELECTRON-SPIN-RESONANCE STUDIES ON PHOTO-SYNTHETIC MATERIALS

Description: A number of organisms have been examined for their ability to produce electron-spin-resonance signals at low temperatures in response to illumination. The efficiency of the response is of the order of not less than 5%, and the wavelength for maximum response is generally slightly on the longer side of the wavelength of maximum absorption, with a minimum appearing at the wavelength of maximum absorption.
Date: May 11, 1960
Creator: Sogo, Power B.; Carter, Louise A. & Calvin, Melvin.
Partner: UNT Libraries Government Documents Department