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Nanofabricated SiO{sub 2}-Si-SiO{sub 2} Resonant Tunneling Diodes

Description: Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.
Date: April 6, 2000
Creator: FLEMING,JAMES G.; CHOW,KAI-CHEUNG & LIN,SHAWN-YU
Partner: UNT Libraries Government Documents Department

Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires

Description: We study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a < 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of their widths. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at ~6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
Date: April 27, 1999
Creator: Blount, M.A.; Lyo, S.K.; Moon, J.S.; Reno, J.L.; Simmons, J.A. & Wendt, J.R.
Partner: UNT Libraries Government Documents Department

Cross-Sectional Scanning Tunneling Microscopy of InAsSb/InAsP Superlattices

Description: Cross-sectional scanning tunneling microscopy has been used to characterize compositional structure in InAs{sub 0.87}Sb{sub 0.13}/InAs{sub 0.73}P{sub 0.27} and InAs{sub 0.83}Sb{sub 0.17}/InAs{sub 0.60}P{sub 0.40} strained-layer superlattice structures grown by metal-organic chemical vapor deposition. High-resolution STM images of the (110) cross section reveal compositional features within both the InAs{sub x}Sb{sub 1{minus}x} and InAs{sub y}P{sub 1{minus}y} alloy layers oriented along the [{bar 1}12] and [1{bar 1}2] directions--the same as those in which features would be observed for CuPt-B type ordered alloys. Typically one variant dominates in a given area, although occasionally the coexistence of both variants is observed. Furthermore, such features in the alloy layers appear to be correlated across heterojunction interfaces in a manner that provides support for III-V alloy ordering models which suggest that compositional order can arise from strain-induced order near the surface of an epitaxially growing crystal. Finally, atomically resolved (1{bar 1}0) images obtained from the InAs{sub 0.87}Sb{sub 0.13}/InAs{sub 0.73}P{sub 0.27} sample reveal compositional features in the [112] and [{bar 1}{bar 1}2] directions, i.e., those in which features would be observed for CuPt-A type ordering.
Date: February 10, 1999
Creator: Allerman, A.A.; Biefeld, R.M.; Yu, E.T. & Zuo, S.L.
Partner: UNT Libraries Government Documents Department

Composite fermions in 2 x 10{sup 6} cm{sup 2}/Vs mobility A1GaAs/GaAs heterostructures grown by MOCVD

Description: Recent growth by MOCVD (metalorganic chemical vapor deposition) of 2.0x10{sup 6} cm{sup 2}/Vs mobility heterostructures are reported. These mobilities, the highest reported to date, are attributed to use of tertiarybutylarsine as the arsenic precursor. Measurements in tilted magnetic fields of the fractional quantum Hall effect states near filling factor 3/2 are consistent with a spin-split composite fermion (CF) model proposed earlier. Extracted values of the product of the CF g-factor and CF effective mass agree with values previously obtained for MBE samples.
Date: December 31, 1996
Creator: Simmons, J.A., Chui, H.C., Harff, N.E., Hammons, B.E. & Du, R.R., Zudov, M.A.
Partner: UNT Libraries Government Documents Department

Upconversion of near GaAs bandgap photons to GaInP{sub 2} emission at the GaAs/(ordered) GaInP{sub 2} heterojunction

Description: The authors have observed upconversion of photoluminescence in several partially ordered GaInP{sub 2} epilayers grown on [100] oriented GaAs substrates. They found that this upconversion occurs even when the excitation photon energy is below the bandgap of GaAs but near the electron-acceptor transitions at {approximately} 1.49 eV. A two-step two-photon absorption model in which the conduction band alignment at the GaAs/GaInP{sub 2} is of type 2 is proposed to explain the results.
Date: September 1, 1996
Creator: Teo, K.L.; Su, Z.P.; Yu, P.Y. & Uchida, K.
Partner: UNT Libraries Government Documents Department

Engineering high-performance vertical cavity lasers

Description: The cw and high-speed performance of vertical cavity surface emitting laser diodes (VCSELs) are affected by both electrical and optical issues arising from the geometry and fabrication of these devices. Structures with low resistance semiconductor mirrors and Al-oxide confinement layers address these issues and have produced record performance including 50% power conversion efficiency and modulation bandwidths up to 20 GHz at small bias currents.
Date: December 31, 1996
Creator: Lear, K.L.; Hou, H.Q.; Hietala, V.M.; Choquette, K.D. & Schneider, R.P. Jr.
Partner: UNT Libraries Government Documents Department

Crossing behavior of the singlet and triplet State of the negatively charged magneto-exciton in a GaAs/AlGaAs quantum well

Description: Polarized magneto-photoluminescence (MPL) measurements on a high mobility {delta}-doped GaAs/AlGaAs single quantum well from 0--60 T at temperatures between 0.37--2.1 K are reported. In addition to the neutral heavy hole magneto-exciton (X{sup 0}), the singlet (X {sub s}{sup {minus}}) and triplet (X {sub t}{sup {minus}}) states of the negatively charged magneto-exciton are observed in both polarizations. The energy dispersive and time-resolved MPL data suggest that their development is fundamentally related to the formation of the neutral magneto-exciton. At a magnetic field of 40 T the singlet and the triplet states cross as a result of the role played by the higher Landau levels and higher energy subbands in their energetic evolution, confirming theoretical predictions. The authors also observed the formation of two higher energy peaks. One of them is completely right circularly polarized and its appearance can be considered a result of the electron-hole exchange interaction enhancement with an associated electron g-factor of 3.7 times the bulk value. The other peak completely dominates the MPL spectrum at fields around 30 T. Its behavior with magnetic field and temperature indicates that it may be related to previous anomalies observed in the integer and fractional quantum Hall regimes.
Date: January 27, 2000
Creator: MUNTEANU,F.M.; KIM,YONGMIN; PERRY,C.H.; RICKEL,D.G.; SIMMONS,JERRY A. & RENO,JOHN L.
Partner: UNT Libraries Government Documents Department

A new type of magnetoresistance oscillations: Interaction of a two-dimensional electron gas with leaky interface phonons

Description: The authors report a new type of oscillations in magnetoresistance observed in high-mobility two-dimensional electron gas (2DEG), in GaAs-AIGaAs heterostructures. Being periodic in 1/B these oscillations appear in weak magnetic field (B &lt; 0.3 T) and only in a narrow temperature range (3 K &lt; T &lt; 7 K). Remarkably, these oscillations can be understood in terms of magneto-phonon resonance originating from the interaction of 2DEG and leaky interface-acoustic phonon modes. The existence of such modes on the GaAs:AIGaAs interface is demonstrated theoretically and their velocities are calculated. It is shown that the electron-phonon scattering matrix element exhibits a peak for the phonons carrying momentum q = 2k{sub F} (k{sub F} is the Fermi wave-vector of 2DEG).
Date: May 11, 2000
Creator: ZUDOV,M.A.; PONOMAREV,I.V.; EFROS,A.L.; DU,R.R.; SIMMONS,JERRY A. & RENO,JOHN L.
Partner: UNT Libraries Government Documents Department

Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Description: The magnetophotoluminescence (MPL) behavior of a GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the {nu}=l quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the {nu}=l/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors.
Date: May 25, 1999
Creator: Kim, Yongmin; Munteanu, F.M.; Perry, C.H.; Reno, J.L.; Rickel, D.G. & Simmons, J.A.
Partner: UNT Libraries Government Documents Department

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor

Description: A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.
Date: March 16, 1999
Creator: Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M. et al.
Partner: UNT Libraries Government Documents Department

Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field

Description: Photoluminescence upconversion (PLU) is a phenomenon in which a sample emits photons with energy higher than that of the excitation photon. This effect has been observed in many materials including rare earth ions doped in insulating hosts and semiconductor heterostructures without using high power lasers as the excitation source. Recently, this effect has been observed also in partially CuPt-ordered GaInP{sub 2} epilayers grown on GaAs substrates. As a spectroscopic technique photoluminescence upconversion is particularly well suited for studying band alignment at heterojunction interface. The value of band-offset has been determined with meV precision using magneto-photoluminescence. Using the fact that the pressure coefficient of electrons in GaAs is higher than those in GaInP{sub 2} they have been able to manipulate the band-offset at the GaInP/GaAs interface. By converting the band-offset from Type I to Type II they were able to demonstrate that the efficiency of the upconversion process is greatly enhanced by a Type II band-offset.
Date: December 31, 2000
Creator: Yu, P.Y.; Martinez, G.; Zeman, J. & Uchida, K.
Partner: UNT Libraries Government Documents Department

GaN High Power Devices

Description: A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
Date: July 17, 2000
Creator: PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P. et al.
Partner: UNT Libraries Government Documents Department

A GaAs heterojunction bipolar transistor with 106 V breakdown

Description: A high voltage GaAs HBT with an open-base collector breakdown voltage of 106 V and an open-emitter breakdown voltage of 134 V has been demonstrated. A high quality 9.0 {micro}m thick collector doped to 2.0{times}10{sup 15} cm{sup {minus}3} grown by MBE on a doped GaAs substrate is the key to achieving this breakdown. These results were achieved for HBTs with 4{times}40 {micro}m{sup 2} emitters. DC current gain of 38 at 6,000 A/cm{sup 2} was measured.
Date: January 11, 2000
Creator: Baca, A.G.; Klem, J.F.; Ashby, C.I. & Martin, D.C.
Partner: UNT Libraries Government Documents Department

Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor

Description: The authors have demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub C} and a negligible {triangle}E{sub V}, and this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (Eg = 1.20 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs of comparable collector thickness and doping level.
Date: February 9, 2000
Creator: Chang, Ping-Chih; Li, N. Y.; Laroche, J. R.; Baca, Albert G.; Hou, H. Q. & Ren, F.
Partner: UNT Libraries Government Documents Department

Reciprocal-space and real-space analyses of compositional modulation in InAs/AlAs short-period superlattices

Description: The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP is examined. The use of x-ray diffraction, TEM, AFM, and STEM to characterize the modulations is discussed. Combining the information from these techniques gives increased insight into the phenomenon and how to manipulate it. Diffraction measures the intensity of modulation and its wavelength, and is used to identify growth conditions giving strong modulation. The TEM and STEM analyses indicate that local compositions are modulated by as much as 0.38 InAs mole fraction. Plan-view images show that modulated structures consists of short ({approx_lt}0.2 {micro}m) In-rich wires with a 2D organization in a (001) growth plane. However, growth on miscut substrates can produce a single modulation along the miscut direction with much longer wires ({approx_gt}0.4 {micro}m), as desired for potential applications. Photoluminescence studies demonstrate that the modulation has large effects on the bandgap energy of the superlattice.
Date: January 25, 2000
Creator: FOLLSTAEDT,DAVID M.; LEE,STEPHEN R.; RENO,JOHN L.; JONES,ERIC D.; TWESTEN,R.D.; NORMAN,A.G. et al.
Partner: UNT Libraries Government Documents Department

Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions

Description: Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields ({nu} >2), the photohuninescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor {nu} <1 and 1< {nu} <2, we found strong bound states due to Mott type Vocalizations. Since a SHJ has an open valence band structure, these bound states area unique property of the dynamic movement of the valence holes in strong magnetic fields.
Date: May 25, 1999
Creator: Jiang, H.W.; Kim, Yongmin; Lee, Kyu-Seok; Lee, X.; Munteanu, F.M.; Perry, C.H. et al.
Partner: UNT Libraries Government Documents Department

Atomic scale interface structure of In{sub 0.2}Ga{sub 0.8}As/GaAs strained layers studied by cross-sectional scanning tunneling microscopy

Description: A molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As/GaAs strained layer structure has been studied by scanning tunneling microscopy in cross-section on the (110) cleavage plane perpendicular to [001] the growth direction. Individual indium atoms were differentially imaged in the group III sublattice, allowing, a direct observation of the interface roughness due to the indium compositional fluctuation. In the In{sub 0.2}Ga{sub 0.8}As layers, Indium atoms are found in clusters preferentially along the growth direction with each cluster containing 2--3 indium atoms. Indium segregation induced asymmetrical interface broadening is studied on an atomic scale. The interface of In{sub 0.2}Ga{sub 0.8}As grown on GaAs is sharp within 2--4 atomic layers. The interface of GaAs grown on In{sub 0.2}Ga{sub 0.8}As is found to be broadened to about 5--10 atomic layers. The atomic scale fluctuation due to indium distribution is about 20 {angstrom} alone the interface in this case. The authors conclude that clustering and segregation are the main reason for the In{sub 0.2}Ga{sub 0.8}As/GaAs interface roughness.
Date: November 1, 1993
Creator: Zheng, J.F.; Weber, E.R. & Salmeron, M.B.
Partner: UNT Libraries Government Documents Department

Complementary HFET technology for low-power mixed-mode applications

Description: Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. An earlier digital CHFET technology with independently optimizable transistors which operated with 319 ps loaded gate delays at 8.9 fJ is reviewed. Then work demonstrating the applicability of the digital nJFET device as a low-power microwave transistor in a hybrid microwave amplifier without any modification to the digital process is presented. A narrow band amplifier with a 0.7 {times} 100 {micro}m nJFET as the active element was designed, constructed, and tested. At 1 mW operating power, the amplifier showed 9.7 dB of gain at 2.15 GHz and a minimum noise figure of 2.5 dB. In addition, next generation CHFET transistors with sub 0.5 {micro}m gate lengths were developed. Cutoff frequencies, f{sub t} of 49 GHz and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 {micro}m gates, respectively. These FETs will enable both digital and microwave circuits with enhanced performance.
Date: June 1, 1996
Creator: Baca, A.G.; Sherwin, M.E.; Zolper, J.C.; Dubbert, D.F.; Hietala, V.M.; Shul, R.J. et al.
Partner: UNT Libraries Government Documents Department

Energy dispersive X-ray reflectivity characterization of semiconductor heterostructures and interfaces

Description: Energy dispersive X-ray reflectivity is a versatile tool for analyzing thin film structures. Layer thickness, interface roughness and composition can be determined with a single non-destructive measurement. Use of energy dispersive detection enables spectra to be acquired in less than 500 s with a rotating anode X-ray generator, making the study of kinetics possible.
Date: July 1, 1995
Creator: Chason, E.; Mayer, T.M. & Krstelj, Z.M.
Partner: UNT Libraries Government Documents Department

Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

Description: A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for &gt;11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for &gt;2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.
Date: August 9, 1999
Creator: Ashby, Carol I.H.; Baca, Albert G.; Chang, P.-C; Hafich, M.J.; Hammons, B.E. & Zavadil, Kevin R.
Partner: UNT Libraries Government Documents Department

Self- and zinc diffusion in gallium antimonide

Description: The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will ...
Date: March 26, 2002
Creator: Nicols, Samuel Piers
Partner: UNT Libraries Government Documents Department

Synthesis, properties, and applications of nanophase materials

Description: Work on the synthesis, properties, and applications of nanophase materials has developed rapidly during the past decade. A wide variety of methods now exist for their production, including several plasma-based processes. The possibilities for engineering new materials with unique or improved properties for a number of applications is now evident from the extant research results. A brief review is presented here along with some examples of useful application areas and some thoughts for the future of this field.
Date: April 1, 1995
Creator: Siegel, R.W.
Partner: UNT Libraries Government Documents Department

Magneto-optical and photoemission studies of ultrathin wedges

Description: Magnetic phase transitions of Fe wedges grown epitaxially on Cu(100) are detected via the surface magneto-optical Kerr effect and used to construct a phase diagram for face centered Fe. Also, the confinement of Cu sp- and d-quantum-well states is studied for Cu/Co(wedge)/Cu(100) utilizing undulator-based photoemission experiments.
Date: December 1, 1995
Creator: Bader, S. D. & Li, Dongqi
Partner: UNT Libraries Government Documents Department