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Symmetry Breaking in Few Layer Graphene Films

Description: Recently, it was demonstrated that the quasiparticledynamics, the layer-dependent charge and potential, and the c-axisscreening coefficient could be extracted from measurements of thespectral function of few layer graphene films grown epitaxially on SiCusing angle-resolved photoemission spectroscopy (ARPES). In this articlewe review these findings, and present detailed methodology for extractingsuch parameters from ARPES. We also present detailed arguments againstthe possibility of an energy gap at the Dirac crossing ED.
Date: May 25, 2007
Creator: Bostwick, A.; Ohta, T.; McChesney, J.L.; Emtsev, K.; Seyller,Th.; Horn, K. et al.
Partner: UNT Libraries Government Documents Department

Direct Atomic Level Controlled Growth and Characterization of h-BN and Graphene Heterostructures on Magnetic Substrates for Spintronic Applications

Description: Epitaxial multilayer h-BN(0001) heterostructures and graphene/h-BN heterostructures have many potential applications in spintronics. The use of h-BN and graphene require atomically precise control and azimuthal alignment of the individual layers in the structure. These in turn require fabrication of devices by direct scalable methods rather than physical transfer of BN and graphene flakes, and such scalable methods are also critical for industrially compatible development of 2D devices. The growth of h-BN(0001) multilayers on Co and Ni, and graphene/h-BN(0001) heterostructures on Co have been studied which meet these criteria. Atomic Layer Epitaxy (ALE) of BN was carried out resulting in the formation of macroscopically continuous h-BN(0001) multilayers using BCl3 and NH3 as precursors. X-ray photoemission spectra (XPS) show that the films are stoichiometric with an average film thickness linearly proportional to the number of BCl3/NH3 cycles. Molecular beam epitaxy (MBE) of C yielded few layer graphene in azimuthal registry with BN/Co(0001) substrate. Low energy electron diffraction (LEED) measurements indicate azimuthally oriented growth of both BN and graphene layers in registry with the substrate lattice. Photoemission data indicate B:N atomic ratios of 1:1. Direct growth temperatures of 600 K for BN and 800 to 900 K for graphene MBE indicate multiple integration schemes for applications in spintronics.
Date: August 2016
Creator: Beatty, John D.
Partner: UNT Libraries

Laser Interactions for the Synthesis and In Situ Diagnostics of Nanomaterials

Description: Laser interactions have traditionall been at thec center of nanomaterials science, providing highly nonequilibrium growth conditions to enable the syn- thesis of novel new nanoparticles, nanotubes, and nanowires with metastable phases. Simultaneously, lasers provide unique opportunities for the remote char- acterization of nanomaterial size, structure, and composition through tunable laser spectroscopy, scattering, and imaging. Pulsed lasers offer the opportunity, there- fore, to supply the required energy and excitation to both control and understand the growth processes of nanomaterials, providing valuable views of the typically nonequilibrium growth kinetics and intermediates involved. Here we illustrate the key challenges and progress in laser interactions for the synthesis and in situ diagnostics of nanomaterials through recent examples involving primarily carbon nanomaterials, including the pulsed growth of carbon nanotubes and graphene.
Date: January 1, 2014
Creator: Geohegan, David B.; Puretzky, Alexander A.; Yoon, Mina; Eres, Gyula; Rouleau, Christopher; Xiao, Kai et al.
Partner: UNT Libraries Government Documents Department

Surface Chemical Deposition of Advanced Electronic Materials

Description: The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current-time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS measurements confirmed the presence and stability of adsorbed I on the Ru surface following pre-treatment in a KI/H2SO4 solution and following polarization to at least −200 mV vs. Ag/AgCl. CV data of samples pre-reduced in I-containing electrolyte exhibited a narrow Cu deposition peak in the overpotential region and a UPD peak. The kinetics of the electrodeposited Cu films was investigated by CTT measurements and applied to theoretical models of nucleation. The data indicated that a protective I adlayer may be deposited on an air-exposed Ru electrode as the oxide surface is electrochemically reduced, and that this layer will inhibit reformation of an oxide during the Cu electroplating process. A novel method for epitaxial graphene growth directly on a dielectric substrate of systematically variable thickness was studied. Mono/multilayers of BN(111) were grown on Ru(0001) by atomic layer deposition (ALD), exhibiting a flat (non-nanomesh) R30(3x3) structure. BN(111) was used as a template for growth of graphene by chemical vapor deposition (CVD) of C2H4 at 1000 K. Characterization by LEED, Auger, STM/STS and Raman indicate the graphene is in registry with the BN substrate, and exhibits a HOPG-like 0 eV bandgap density-of-states (DOS).
Date: December 2010
Creator: Bjelkevig, Cameron
Partner: UNT Libraries

The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates

Description: Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was successfully grown by sublimation of silicon from epitaxy-ready, Si and C terminated, 6H-SiC wafers in high-vacuum and argon atmosphere. The graphene formation was accompanied by a significant enhancement of Ohmic behavior, and, was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy (HRTEM) showed that the interface between the metal and SiC remained sharp and free of macroscopic defects even after 30 min, 1430 °C anneals. The impact of high dielectric constant Al2O3 and its deposition by radio frequency (RF) magnetron sputtering on the structural and electrical properties of MLG is discussed. HRTEM analysis confirms that the Al2O3/MLG interface is relatively sharp and that thickness approximation of the MLG using angle resolved X-ray photoelectron spectroscopy (ARXPS) as well as variable-angle spectroscopic ellipsometry (VASE) is accurate. The totality of results indicate that ARXPS can be used as a nondestructive tool to measure the thickness of MLG, and that RF sputtered Al2O3 can be used as a (high-k) constant gate oxide in multilayer grapheme based transistor applications.
Date: May 2011
Creator: Maneshian, Mohammad Hassan
Partner: UNT Libraries

Enhancements of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy

Description: The effects of octadecylamine-functionalized reduced graphene oxide (FRGO) on the frictional and wear properties of diglycidylether of bisphenol-A (DGEBA) epoxy are studied using a pin-on-disk tribometer. It was observed that the addition of FRGO significantly improves the tribological, mechanical, and thermal properties of epoxy matrix. Graphene oxide (GO) was functionalized with octadecylamine (ODA), and then reduction of oxygen-containing functional groups was carried out using hydrazine monohydrate. The Raman and x-ray photoelectron spectroscopy studies confirm significant reduction in oxygen-containing functional groups and formation of ODA functionalized reduced GO. The nanocomposites are prepared by adding 0.1, 0.2, 0.5 and 1.0 wt % of FRGO to the epoxy. The addition of FRGO increases by more than an order of magnitude the sliding distance during which the dynamic friction is ≤ 0.1. After this distance, the friction sharply increases to the range of 0.4 - 0.5. We explain the increase in sliding distance during which the friction is low by formation of a transfer film from the nanocomposite to the counterface. The wear rates in the low and high friction regimes are approximately 1.5 x 10-4 mm3/N·m and 5.5 x 10-4 mm3/N·m, respectively. The nanocomposites exhibit a 74 % increase in Young’s modulus with 0.5 wt. % of FRGO, and an increase in glass transition and thermal degradation temperatures.
Date: August 2014
Creator: Shah, Rakesh K.
Partner: UNT Libraries

Rationally designed graphene-nanotube 3D architectures with a seamless nodal junction for efficient energy conversion and storage

Description: This article discusses the development of a strategy of creating 3D graphene-carbon nanotube hollow fibers with radially aligned CNTs (RACNTs) seamless sheathed by a cylindrical graphene layer through a one-step chemical vapor deposition using an anodized aluminum wire template.
Date: September 4, 2015
Creator: Xue, Yuhua; Ding, Yong; Niu, Jianbing; Xia, Zhenhai; Roy, Ajit; Chen, Hao et al.
Partner: UNT College of Engineering

Effects of light on the resistivity of chemical vapor deposited graphene films

Description: This article reports that the resistance of a chemical vapor deposition (CVD) grown graphene film transferred onto an SiO₂ substrate increases to higher saturation values upon exposure to light of decreasing wavelength from the visible to ultraviolet.
Date: October 24, 2016
Creator: Mo, Yudong; Pérez, José M.; Ye, Zhou; Zhao, Lei; Yang, Shizhong; Tan, Liuxi et al.
Partner: UNT College of Arts and Sciences

MBE Growth and Characterization of Graphene on Well-Defined Cobalt Oxide Surfaces: Graphene Spintronics without Spin Injection

Description: The direct growth of graphene by scalable methods on magnetic insulators is important for industrial development of graphene-based spintronic devices, and a route towards substrate-induced spin polarization in graphene without spin injection. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction LEED, electron energy loss spectroscopy (EELS) and Auger electron spectroscopy (AES) demonstrate the growth of Co3O4(111) and CoO(111) to thicknesses greater than 100 Å on Ru(0001) surfaces, by molecular beam epitaxy (MBE). The results obtained show that the formation of the different cobalt oxide phases is O2 partial pressure dependent under same temperature and vacuum conditions and that the films are stoichiometric. Electrical I-V measurement of the Co3O4(111) show characteristic hysteresis indicative of resistive switching and thus suitable for advanced device applications. In addition, the growth of Co0.5Fe0.5O(111) was also achieved by MBE and these films were observed to be OH-stabilized. C MBE yielded azimuthally oriented few layer graphene on the OH-terminated CoO(111), Co0.5Fe0.5O(111) and Co3O4(111). AES confirms the growth of (111)-ordered sp2 C layers. EELS data demonstrate significant graphene-to-oxide charge transfer with Raman spectroscopy showing the formation of a graphene-oxide buffer layer, in excellent agreement with previous theoretical predictions. XPS data show the formation of C-O covalent bonding between the oxide layer and the first monolayer (ML) of C. LEED data reveal that the graphene overlayers on all substrates exhibit C3V. The reduction of graphene symmetry to C3V – correlated with C-O bond formation – enables spin-orbit coupling in graphene. Consequences may include a significant band gap and room temperature spin Hall effect – important for spintronic device applications. The results suggest a general pattern of graphene/graphene oxide growth and symmetry lowering for graphene formation on the (111) surfaces of rocksalt-structured oxides.
Date: August 2017
Creator: Olanipekun, Opeyemi B
Partner: UNT Libraries

Biocompatible Graphene-based Growth of Cancer Cells: A Work in Progress

Description: Poster presentation for the 2012 University Scholars Day at the University of North Texas. This poster discusses research on the biocompatible graphene-based growth of cancer cells. Graphene is made of a single layer of carbon atoms. Recently is has been used to successfully differentiate stem cells in neural cells.
Date: April 19, 2012
Creator: Parks, Melissa & Verrill, Diane
Partner: UNT Honors College