Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.
Description:
Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {g…
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Date:
August 1, 2008
Creator:
DePriest, Kendall Russell; Kajder, Karen C. & Peters, Curtis D.
Item Type:
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Partner:
UNT Libraries Government Documents Department