32 Matching Results

Search Results

Advanced search parameters have been applied.

A new optical parametric amplifier based on lithium thioindate used for sum frequency generation vibrational spectroscopic studies of the Amide I mode of an interfacial model peptide

Description: We describe a new optical parametric amplifier (OPA) that employs lithium thioindate, LiInS{sub 2} (LIS), to create tunable infrared light between 1500 cm{sup -1} and 2000 cm{sup -1}. The OPA based on LIS described within provides intense infrared light with a good beam profile relative to similar OPAs built on silver gallium sulfide, AgGaS{sub 2} (AGS), or silver gallium selenide, AgGaSe{sub 2} (AGSe). We have used the new LIS OPA to perform surface-specific sum frequency generation (SFG) vibrational spectroscopy of the amide I vibrational mode of a model peptide at the hydrophobic deuterated polystyrene (d{sub 8}-PS)-phosphate buffered saline interface. This model polypeptide (which is known to be an ?-helix in the bulk solution under the high ionic strength conditions employed here) contains hydrophobic leucyl (L) residues and hydrophilic lysyl (K) residues, with sequence Ac-LKKLLKLLKKLLKL-NH{sub 2}. The amide I mode at the d{sub 8}-PS-buffer interface was found to be centered around 1655 cm{sup -1}. This can be interpreted as the peptide having maintained its {alpha}-helical structure when adsorbed on the hydrophobic surface, although other interpretations are discussed.
Date: May 3, 2008
Creator: York, Roger L.; Holinga, George J.; Guyer, Dean R.; McCrea, Keith R.; Ward, Robert S. & Somorjai, Gabor A.
Partner: UNT Libraries Government Documents Department

Final Report

Description: The objective of this DOE SAI project is to demonstrate the feasibility of electrodeposited and solution-doped transparent conducting oxides (TCOs) such as zinc oxide with resistivity in the mid-10{sup -4} {Omega}-cm range. The target application is an 'on-top' TCO which can be deposited on semiconductors in thin-film and future solar cells including amorphous silicon, copper indium gallium selenide and emerging solar cells. There is no solution-prepared on-top TCO currently used in commercial solar cells. This project, if successful, will fill this gap. Our technical objectives include electrodeposited TCOs with (1) resistivity in the mid-10{sup -4} {Omega}-cm range, (2) post-deposition annealing below 300 C and (3) no-vacuum processing or low-vacuum processing. All the three research objectives listed above have been accomplished in the 14-month period from July 1, 2009 through September 30, 2010. The most noticeable accomplishments of this project are (1) identification of a terawatt-scale dopant for zinc oxide, i.e. yttrium, whose known reserve is enough for 60 peak terawatts of thin-film solar cells; (2) demonstration of a record-low resistivity, 6.3 x 10{sup -5} {Omega}-cm, in solution-deposited zinc oxide with an abundant dopant; and (3) the record-low resistivity was accomplished with a maximum process temperature of 300 C and without vacuum annealing. Industrial applications of the new yttrium-doped zinc oxide are being pursued, including (1) green deposition of yttrium-doped zinc oxide to reduce water consumption during deposition and (2) search for an industrial partner to develop an electrochemical tool for large-area uniform deposition of yttrium-doped zinc oxide.
Date: December 22, 2010
Creator: Tao, Dr. Meng
Partner: UNT Libraries Government Documents Department

CIS photovoltaic technology. Annual technical report, January 12, 1996--January 11, 1997

Description: Thin film photovoltaic modules based on Cu(In,Ga)Se{sub 2} have been shown to possess attributes that should enable them to compete effectively with silicon-based modules, and that should ultimately allow realization of a much lower $/Wp cost figure. These attributes are stability, high efficiency, and low materials cost. Energy Photovoltaics has explored novel CIGS formation recipes that can be implemented on a unique pilot line constructed to coat substrates 4300 cm{sup 2} in area. One particular feature of this line is the use of proprietary linear sources capable of downwards evaporation. After experimentation with several types of recipe, a so-called {open_quotes}hybrid{close_quotes} process was found to simultaneously yield the desired combination of properties, namely good adhesion, device efficiency, uniformity, and reproducibility. The steps involve precursor formation, compound formation, and termination. Diagnostic techniques used to study and improve the CIGS films included spatial mapping of thickness, composition (using Auger analysis), resistance, V{sub oc} and I{sub sc}. The last three items are determined by quick tests designed to provide rapid feedback on plate quality. Problem areas were broken down and isolated through use of techniques involving substitution of different pieces of equipment for certain processing steps. For example, pilot line precursors were selenized in both the pilot line and smaller scale R&D equipment.
Date: June 1, 1997
Creator: Delahoy, A.E.; Britt, J.S. & Kiss, Z.J.
Partner: UNT Libraries Government Documents Department

Processing and modeling issues for thin-film solar cell devices. Final report

Description: During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.
Date: November 1, 1997
Creator: Birkmire, R.W. & Phillips, J.E.
Partner: UNT Libraries Government Documents Department

Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

Description: Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.
Date: July 6, 1995
Creator: Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P. & Viren, J.
Partner: UNT Libraries Government Documents Department

Influence of Damp Heat on the Electrical, Optical, and Morphological Properties of Encapsulated CuInGaSe2 Devices: Preprint

Description: CuInGaSe2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH)2 from hydrolysis of the Al-doped ZnO (AZO) window layer by the moisture, which was detrimental to the collection of minority carriers. Minority carrier lifetimes observed for the CIGS devices using time resolved photoluminescence (TRPL) remained relatively long after DH exposure. By etching the DH-exposed devices and re-fabricating with new component layers, the performance of reworked devices improved significantly, further indicating that DH-induced degradation of the AZO layer and/or the CdS buffer was the primary performance-degrading factor.
Date: August 1, 2011
Creator: Sundaramoorthy, R.; Pern, F. J.; Teeter, G.; Li, J. V.; Young, M.; Kuciauskas, D. et al.
Partner: UNT Libraries Government Documents Department

ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules: October 2009--October 2010

Description: This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.
Date: April 1, 2011
Creator: Woods, L.
Partner: UNT Libraries Government Documents Department

Understanding and managing health and environmental risks of CIS, CGS, and CdTe photovoltaic module production and use: A workshop

Description: Environmental, health and safety (EH&S) risks presented by CIS, CGS and CdTe photovoltaic module production, use and decommissioning have been reviewed and discussed by several authors. Several EH&S concerns exit. The estimated EH&S risks are based on extrapolations of toxicity, environmental mobility, and bioavailability data for other related inorganic compounds. Sparse data, however, are available for CIS, CGS or CdTe. In response to the increased interest in these materials, Brookhaven National Laboratory (BNL) has been engaged in a cooperative research program with the National Renewable Energy Laboratory (NREL), the Fraunhofer Institute for Solid State Technology (IFT), the Institute of Ecotoxicity of the GSF Forschungszentrum fair Umwelt und Gesundheit, and the National Institute of Environmental Health Sciences (NIEHS) to develop fundamental toxicological and environmental data for these three compounds. This workshop report describes the results of these studies and describes their potential implications with respect to the EH&S risks presented by CIS, CGS, and CdTe module production, use and decommissioning.
Date: April 28, 1994
Creator: Moskowitz, P.D.; Zweibel, K. & DePhillips, M.P.
Partner: UNT Libraries Government Documents Department

Fundamental studies of the effect of crystal defects on CuInSe{sub 2}/CdS heterojunction behavior: Final report, 28 June 1993--30 June 1998

Description: This report describes the work performed by the University of Illinois at Urbana-Champaign. The following results were obtained under the work funded by this subcontract: (1) Point defects and electronic properties of Cu(In{sub 1-x}Ga{sub x})Se{sub 2}: New record results for hole mobilities in Cu(In{sub 1-x}Ga{sub x})Se{sub 2} based on single crystals grown by Rockett's group; Demonstrated the role of Ga in determining hole concentrations; Showed that Ga does not affect the hole mobility in this material and why this is the case; Determined the diffusion coefficient for Ga in single-crystal Cu(In{sub 1-x}Ga{sub x})Se{sub 2}; Demonstrated the structure and optoelectronic properties of the CuIn{sub 3}Se{sub 5} ordered-defect phase of CuInSe{sub 2}; Characterized the detailed effects of Na on Cu(In{sub 1-x}Ga{sub x})Se{sub 2} solar cells and on the fundamental properties of the material itself (reduces compensating donors in p-type materials); and In collaboration with groups at the Universities of Salford and Liverpool in the United Kingdom, studied the effect of ion implantation damage on Cu(In{sub 1-x}Ga{sub x})Se{sub 2} single-crystals. (2) Materials for and characterization of devices: Developed a novel contact metallurgy that improves adhesion to the underlying Mo back-contact in solar cells made with Cu(In{sub 1-x}Ga{sub x})Se{sub 2}; (This material has also yielded substantial novel materials science behaviors, including grain rotation and growth prior to phase separation in a metastable binary alloy.) Characterized the electroluminescence as a function of temperature and Ga content in Cu(In{sub 1-x}Ga{sub x})Se{sub 2} solar cells and showed that the radiative recombination pathways are not band-to-band as in normal semiconductors, but rather, proceed through defect states; and Working with a group at the University of Uppsala in Sweden, demonstrated novel aspects of the bonding and chemistry of dip-coated CdS heterojunction materials used as heterojunction partner materials in Cu(In{sub 1-x}Ga{sub x})Se{sub 2} solar cells.
Date: November 17, 1999
Creator: Rockett, A.
Partner: UNT Libraries Government Documents Department

A low-cost approach to fabrication of multinary compounds for energy-related applications

Description: Non-vacuum electrodeposition and electroless deposition techniques with a potential to prepare large-area uniform precursor films using low-cost source materials and low-cost capital equipment are very attractive for the growth of compound materials for superconductors and photovoltaic applications. In the first part, a low-cost electrodeposition (ED) method will be discussed for fabrication of high-temperature Tl-oxide-based superconductors. In the second part, electrodeposition and electroless deposition of semiconductor Cu-In-Ga-Se thin films will be discussed.
Date: January 3, 2000
Creator: Bhattacharya, R.N. & Deb, S.K.
Partner: UNT Libraries Government Documents Department

Preferred orientation in polycrystalline Cu(In,Ga)Se{sub 2} and its effect on absorber thin-films and devices

Description: The purpose of this work is to investigate physical properties of Cu(In,Ga)Se{sub 2} polycrystalline thin-films exhibiting a high degree of preferred orientation. Specifically, by using Na-free Cu(In,Ga)Se{sub 2} thin-films, it is intended to experimentally determine differences (if any) between films with a (110/102)-preferred orientation and films with a (112)-preferred orientation. The approach to the problem is a systematic comparative analysis of film and device properties in which the most significant variable is the preferred orientation of the Cu(In,Ga)Se{sub 2} polycrystalline absorbers. To complement the results of Na-free absorbers and devices, a microstructural analysis is presented on (110)-oriented high efficiency Cu(In,Ga)Se{sub 2} absorbers that are grown on standard Mo-coated soda-lime glass substrates.
Date: May 15, 2000
Creator: Contreras, M. A.; Jones, K. M.; Gedvilas, L. & Matson, R.
Partner: UNT Libraries Government Documents Department

Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996

Description: The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.
Date: August 1, 1996
Creator: Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Eser, E.; Hegedus, S.S.; McCandless, B.E. et al.
Partner: UNT Libraries Government Documents Department

CIS photovoltaic technology. Annual technical report, January 12, 1995--January 11, 1996

Description: EPV`s overall strategy in developing CIGS photovoltaic technology has been to define and construct a flexible set of large area vacuum deposition equipment and to explore CIGS formation recipes that can be implemented on this equipment. This is the inverse of the conventional approach in which manufacturing techniques are sought that can reproduce a high efficiency laboratory scale process over large areas. A feature of this equipment is the use of proprietary linear sources capable of downwards evaporation. Using recipes generated within this program, CIGS cells with efficiencies up to 13.9% were prepared by EPV under a separate CRADA with NREL. Entirely within this program, an aperture area efficiency of 9.6% was achieved for a laminated submodule of area 135.2 cm{sup 2}. Considerable effort has gone into the preparation and characterization of CIGS prepared on substrates measuring 96.5 cm x 44.5 cm, and good compositional uniformity has been achieved along both the short and long directions of the plate. Despite this, the material has not yet achieved the efficiency levels demonstrated in smaller scale equipment, and recipe development is ongoing. As part of a program to eliminate, if possible, the use of CdS, alternative buffer layers such as InSe, In{sub x}S{sub y}, and ZnSe have been explored, and, to gain insight into junction formation, CdSe. Of these compounds, ZnSe has shown the most promise, and further experiments are being conducted to optimize material and device properties.
Date: June 1, 1996
Creator: Delahoy, A.E.; Britt, J.S. & Gabor, A.M.
Partner: UNT Libraries Government Documents Department

Device physics of thin-film polycrystalline cells and modules: Phase 1 annual report: February 1998--January 1999

Description: This report describes work done by Colorado State University (CSU) during Phase 1 of this subcontract. CSU researchers continued to make basic measurements on CI(G)S and CdTe solar cells fabricated at different labs, to quantitatively deduce the loss mechanisms in these cells, and to make appropriate comparisons that illuminate where progress is being made. Cells evaluated included the new record CIGS cell, CIS cells made with and without CdS, and those made by electrodeposition and electroless growth from solution. Work on the role of impurities focused on sodium in CIS. Cells with varying amounts of sodium added during CIS deposition were fabricated at NREL using four types of substrates. The best performance was achieved with 10{sup {minus}2}--10{sup {minus}1} at% sodium, and the relative merits of proposed mechanisms for the sodium effect were compared. Researchers also worked on the construction and testing of a fine-focused laser-beam apparatus to measure local variations in polycrystalline cell performance. A 1{micro}m spot was achieved, spatial reproducibility in one and two dimensions is less than 1 {micro}m, and photocurrent is reliably measured when the 1{micro}m spot is reduced as low as 1-sun in intensity. In elevated-temperature stress tests, typical CdTe cells held at 100 C under illumination and normal resistive loads for extended periods of time were generally very stable; but those held under reverse or large forward bias and those contacted using larger amounts of copper were somewhat less stable. CdTe cell modeling produced reasonable fits to experimental data, including variations in back-contact barriers. A major challenge being addressed is the photovoltaic response of a single simple-geometry crystallite with realistic grain boundaries.
Date: December 21, 1999
Creator: Sites, J. R.
Partner: UNT Libraries Government Documents Department

Numericl modeling of graded band gap CIGS solar cells

Description: The high efficiency reported recently by NREL for CIGS solar cells demonstrates the potential of band gap grading in producing high efficiency thin film solar cells. In order to reap the full benefits of this design strategy, a clear understanding of the fundamental device physics of these structures is needed. The purpose of this paper is to examine the role grading of the band gap plays in achieving high conversion efficiencies. To aid in this examination, a detailed numerical device simulation program, ADEPT, is used.
Date: December 31, 1994
Creator: Gray, J.L. & Lee, Youn Jung
Partner: UNT Libraries Government Documents Department

Characterization of Damp-Heat Degradation of CuInGaSe2 Solar Cell Components and Devices by (Electrochemical) Impedance Spectroscopy: Preprint

Description: This work evaluated the capability of (electrochemical) impedance spectroscopy (IS, or ECIS as used here) to monitor damp heat (DH) stability of contact materials, CuInGaSe2 (CIGS) solar cell components, and devices. Cell characteristics and its variation of the CIGS devices were also examined by the ECIS.
Date: September 1, 2011
Creator: Pern, F. J. J. & Noufi, R.
Partner: UNT Libraries Government Documents Department

Comparative Study of Zn(O,S) Buffer Layers and CIGS Solar Cells Fabricated by CBD, ALD, and Sputtering: Preprint

Description: Zn(O,S) thin films were deposited by chemical bath deposition (CBD), atomic layer deposition, and sputtering. Composition of the films and band gap were measured and found to follow the trends described in the literature. CBD Zn(O,S) parameters were optimized and resulted in an 18.5% efficiency cell that did not require post annealing, light soaking, or an undoped ZnO layer. Promising results were obtained with sputtering. A 13% efficiency cell was obtained for a Zn(O,S) emitter layer deposited with 0.5%O2. With further optimization of process parameters and an analysis of the loss mechanisms, it should be possible to increase the efficiency.
Date: June 1, 2012
Creator: Ramanathan, K.; Mann, J.; Glynn, S.; Christensen, S.; Pankow, J.; Li, J. et al.
Partner: UNT Libraries Government Documents Department

Manufacturing technology development for CuInGaSe sub 2 solar cell modules

Description: The report describes research performed by Boeing Aerospace and Electronics under the Photovoltaic Manufacturing Technology project. We anticipate that implementing advanced semiconductor device fabrication techniques to the production of large-area CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS)/Cd{sub 1-y}Zn{sub y}S/ZnO monolithically integrated thin-film solar cell modules will enable 15% median efficiencies to be achieved in high-volume manufacturing. We do not believe that CuInSe{sub 2} (CIS) can achieve this efficiency in production without sufficient gallium to significantly increase the band gap, thereby matching it better to the solar spectrum (i.e., x{ge}0.2). Competing techniques for CIS film formation have not been successfully extended to CIGS devices with such high band gaps. The SERI-confirmed intrinsic stability of CIS-based photovoltaics renders them far superior to a-Si:H-based devices, making a 30-year module lifetime feasible. The minimal amounts of cadmium used in the structure we propose, compared to CdTe-based devices, makes them environmentally safer and more acceptable to both consumers and relevant regulatory agencies. Large-area integrated thin-film CIGS modules are the product most likely to supplant silicon modules by the end of this decade and enable the cost improvements which will lead to rapid market expansion.
Date: November 1, 1991
Creator: Stanbery, B.J. (Boeing Aerospace and Electronics Co., Seattle, WA (United States))
Partner: UNT Libraries Government Documents Department

Optimization of laser scribing for thin-film PV modules. Annual technical progress report, 12 April 1995--11 April 1996

Description: One of the most important aspects in moving from the cell level to the integrated module level in thin-film photovoltaics is to achieve reliable and reproducible cell interconnects having low series resistance and high shunt resistance, and to do this with a minimum of dead area between cells. It is known that mechanical scribing often produces considerable damage (e.g., film tearing) surrounding the scribe. Laser scribing has shown the potential for superior scribe widths and profiles for many of the materials involved with thin-film PV. However, problems arc also known to occur with a heat-affected zone around the scribe, and for some materials and some focus conditions high positive ridges or collars are left along the scribe line. The commercially-available scribing systems have been optimized typically for other applications and other materials such as scribing of crystalline Si. Optimum operation for thin-film PV materials has been investigated by several PV manufacturers but there has been limited discussion of problems or of optimum parameters in the open literature. Furthermore, to our knowledge, there has been little investigation of the applicability, for thin-film PV, of laser systems other than the traditional cw lamp-pumped, Q-switched Nd:YAG.
Date: October 1, 1996
Creator: Compaan, A.D.; Jayamaha, U.; Matulionis, I. & Miller, M.J.
Partner: UNT Libraries Government Documents Department

Advanced Processing of CdTe- and CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2}-Based Solar Cells; Phase I Report

Description: The main tasks of the cadmium telluride portion of this project include the development of simplified processing for fabricating high-efficiency CdTe solar cells, studies on the long-term stability of CdTe devices, and the development of alternative transparent conducting oxides, window layers, and back contacts. The second portion of this project focused on CIGS solar cells. The main tasks include the development of a manufacturable process for CIGS devices and the development of high-band-gap alloys for use in tandem cell structures. Additional objectives include development of improved junction formation processing and contributing to the overall understanding of these materials and devices. Because the processing is manufacturing-driven, the authors use an all solid-state, simplified two-step process that relaxes the level of deposition control required.
Date: September 5, 2000
Creator: Morel, D.L. & Ferekides, C.S.
Partner: UNT Libraries Government Documents Department

Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors

Description: The authors have fabricated high-efficiency thin-film CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).
Date: May 22, 2000
Creator: Bhattacharya, R. N.; Balcioglu, A.; Ramanathan, K. & Batchelor, W. K., Ahrenkiel, R. K.
Partner: UNT Libraries Government Documents Department