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Defect reduction in gallium nitride using cantilever epitaxy.

Description: Cantilever epitaxy (CE) has been developed to produce GaN on sapphire with low dislocation densities as needed for improved devices. The basic mechanism of seeding growth on sapphire mesas and lateral growth of cantilevers until they coalesce has been modified with an initial growth step at 950 C. This step produces a gable with (11{bar 2}2) facets over the mesas, which turns threading dislocations from vertical to horizontal in order to reduce the local density above mesas. This technique has produced material with densities as low as 2-3x10{sup 7}/cm{sup 2} averaged across extended areas of GaN on sapphire, as determined with AFM, TEM and cathodoluminescence (CL). This density is about two orders of magnitude below that of conventional planar growths; these improvements suggest that locating wide-area devices across both cantilever and mesa regions is possible. However, the first implementation of this technique also produced a new defect: cracks at cantilever coalescences with associated arrays of lateral dislocations. These defects have been labeled 'dark-block defects' because they are non-radiative and appear as dark rectangles in CL images. Material has been grown that does not have dark-block defects. Examination of the evolution of the cantilever films for many growths, both partial and complete, indicates that producing a film without these defects requires careful control of growth conditions and crystal morphology at multiple steps. Their elimination enhances optical emission and uniformity over large (mm) size areas.
Date: August 1, 2003
Creator: Mitchell, Christine Charlotte
Partner: UNT Libraries Government Documents Department

The Band Gap of AlGaN Alloys

Description: The band gap of AlXGal.XN is measured for the composition range 0s<0.45; the resulting bowing parameter, b=+O.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlXGal_XN: directly nucleated or buffered growths of AlXGal-XN initiated at temperatures T>800 C on sapphire usually lead to stronger apparent bowing (b> +1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+ 1.3 eV). Extant data suggests that the correct band-gap bowing parameter for AlXGal-XN is b=+O.62 (N.45) eV.
Date: January 29, 1999
Creator: Biefeld, R.M.; Crawford, M.H.; Han, J.; Lee, S.R.; Petersen, G.A. & Wright, A.F.
Partner: UNT Libraries Government Documents Department

Stress and Defect Control in GaN Using Low Temperature Interlayers

Description: In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.
Date: December 4, 1998
Creator: Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J. et al.
Partner: UNT Libraries Government Documents Department

The Influence of Crystal Structure on the Lattice Sites and Formation Energies of Hydrogen in Wurtzite and Zinc-Blende GaN

Description: Charge-state calculations based on density-functional theory are used to study the formation energy of hydrogen in wurtzite and zinc-blende GaN as a function of Fermi level Comparison of these results reveals notable differences including a 0.56 eV lower formation energy for H2 in wurtzite, and different configurations for H2 and H- in the two crystal structures. Furthermore, H+ is found to be equally stable at bond-centered and anti-bonding sites in wurtzite, whereas it is unstable at a bond-centered site in zinc blende. These differences are due to distinct features of the two crystal structures including: the lower symmetry of wurtzite which provides a wider selection of bonding sites for H+, and the existence of extended three-fold symmetric channels oriented along the c-axis in wurtzite which provide more favorable bonding configurations for H2 and H-.N-H+ stretch-mode vibration frequencies, clustering of ?3+ in p-type material, and diffusion barriers for H" are also investigated in wurtzite GaN. A diffusion barrier of 1.6 eV is found for H- in wurtzite GaN, significantly lower than a previous estimate, and a tendency for H+ clustering in p-type material is found.
Date: February 1, 1999
Creator: Wright, A.F.
Partner: UNT Libraries Government Documents Department

Nucleation and Growth of GaN on GaAs (001) Substrates

Description: The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N<SUB>2</SUB>. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.
Date: May 3, 1999
Creator: Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei et al.
Partner: UNT Libraries Government Documents Department

GaN pnp bipolar junction transistors operated to 250 C

Description: The authors report on the dc performance of the first GaN pnp bipolar junction transistor. The structure was grown by MOCVD on c-plane sapphire substrates and mesas formed by low damage Inductively Coupled Plasma etching with a Cl{sub 2}/Ar chemistry. The dc characteristics were measured up to V{sub BC} of 65 V in common base mode and at temperatures up to 250 C. Under all conditions, I{sub C} {approximately} I{sub E}, indicating higher emitter injection efficiency. The offset voltage was {le} 2 V and devices were operated up to power densities of 40kW{center{underscore}dot}cm{sup {minus}2}.
Date: January 3, 2000
Creator: Zhang, A.P.; Dang, G.; Ren, F.; Han, J.; Monier, C.; Baca, A.G. et al.
Partner: UNT Libraries Government Documents Department

High-Density Plasma-Induced Etch Damage of GaN

Description: Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias andlor high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.
Date: April 29, 1999
Creator: Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J. et al.
Partner: UNT Libraries Government Documents Department

Effects of Hydrogen Implantation into GaN

Description: Proton implantation in GaN is found to reduce the free carrier density through two mechanisms - first, by creating electron and hole traps at around Ec-0.8eV and Ev+0.9eV that lead to compensation in both n- and p-type material, and second, by leading to formation of (AH)O complexes, where A is any acceptor (Mg, Ca, Zn, Be, Cd). The former mechanism is usefid in creating high resistivity regions for device isolation, whereas the latter produces unintentional acceptor passivation that is detrimental to device performance. The strong affinity of hydrogen for acceptors leads to markedly different redistribution behavior for implanted in n- and p-GaN due to the chemical reaction to form neutral complexes in the latter. The acceptors may be reactivated by simple annealing at 2600{degrees}C, or by electron injection at 25-150{degrees}C that produces debonding of the (AH) centers. Implanted hydrogen is also strongly attracted to regions of strain in heterostructure samples during annealing, leading to pile-up at epi-epi and epi-substrate interfaces. II? spectroscopy shows that implanted hydrogen also decorates VG, defects in undoped and n-GaN.
Date: December 24, 1998
Creator: Abernathy, C.R.; Han, J.; Pearton, S.J.; Shul, R.J.; Song, C.Y.; Stavola, M. et al.
Partner: UNT Libraries Government Documents Department

Effect of carrier gas on the surface of morphology and mosaic dispersion for GaN films by low-pressure MOCVD

Description: Low-pressure metal-organic chemical vapor deposition (MOCVD) has been used to deposit unnucleated and self-nucleated GaN thin films on (00.1) sapphire substrates. For the self-nucleated films, initial layers were grown at 540{degrees}C using trimethylgallium and ammonia as elemental sources and either nitrogen or hydrogen as the carrier gas. Using these same gas phase conditions, overlayers on native (00.1) sapphire substrates or the GaN-nucleated (00.1) sapphire substrates were deposited at 1025{degrees}C. The surface morphology and mosaic dispersion of these unnucleated and self-nucleated GaN thin films have been surveyed by a combination of real space images from atomic force microscopy and reciprocal space intensity data from X-ray scattering measurements. As expected, the unnucleated GaN films show a large-grained hexagonal relief, typical of three-dimensional island growth. However, the self-nucleated films are shown to be dense mosaics of highly oriented islands, emblematic of a more two-dimensional growth.
Date: December 31, 1995
Creator: Kistenmacher, T.J.; Wickerden, D.K.; Hawley, M.E. & Leavitt, R.P.
Partner: UNT Libraries Government Documents Department

Filamentation and Fundamental-Mode Operation in InGaN Quantum Well Lasers

Description: Filamentation, and consequently output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In{sub 0.2}Ga{sub 0.8}N/GaN gain medium the antiguiding factor in a thick 4nm quantum well is considerably smaller than that for a narrow 2nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels.
Date: December 8, 1999
Partner: UNT Libraries Government Documents Department

GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

Description: The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050"C. Furthermore, in-situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.
Date: October 14, 1998
Creator: Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S. et al.
Partner: UNT Libraries Government Documents Department

GaN: Defect and Device Issues

Description: The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Date: November 9, 1998
Creator: Pearton, S.J.; Ren, F.; Shul, R.J. & Zolper, J.C.
Partner: UNT Libraries Government Documents Department

Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

Description: We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development.
Date: January 1, 2006
Creator: Dupuis, Russell D.
Partner: UNT Libraries Government Documents Department

Small Area Array-Based LED Luminaire Design

Description: This report contains a summary of technical achievements during a three-year project to demonstrate high efficiency LED luminaire designs based on small area array-based gallium nitride diodes. Novel GaN-based LED array designs are described, specifically addressing the thermal, optical, electrical and mechanical requirements for the incorporation of such arrays into viable solid-state LED luminaires. This work resulted in the demonstration of an integrated luminaire prototype of 1000 lumens cool white light output with reflector shaped beams and efficacy of 89.4 lm/W at CCT of 6000oK and CRI of 73; and performance of 903 lumens warm white light output with reflector shaped beams and efficacy of 63.0 lm/W at CCT of 2800oK and CRI of 82. In addition, up to 1275 lumens cool white light output at 114.2 lm/W and 1156 lumens warm white light output at 76.5 lm/W were achieved if the reflector was not used. The success to integrate small area array-based LED designs and address thermal, optical, electrical and mechanical requirements was clearly achieved in these luminaire prototypes with outstanding performance and high efficiency.
Date: January 9, 2008
Creator: Yuan, Thomas
Partner: UNT Libraries Government Documents Department

High Efficiency LED Lamp for Solid-State Lighting

Description: This report contains a summary of technical achievements during a three-year project to demonstrate high efficiency, solid-state lamps based on gallium nitride/silicon carbide light-emitting diodes. Novel chip designs and fabrication processes are described for a new type of nitride light-emitting diode with the potential for very high efficiency. This work resulted in the demonstration of blue light-emitting diodes in the one watt class that achieved up to 495 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 51% and 45%, respectively. When combined with a phosphor in Cree's 7090 XLamp package, these advanced blue-emitting devices resulted in white light-emitting diodes whose efficacy exceeded 85 lumens per watt. In addition, up to 1040 lumens at greater than 85 lumens per watt was achieved by combining multiple devices to make a compact white lamp module with high optical efficiency.
Date: December 31, 2006
Creator: Ibbetson, James
Partner: UNT Libraries Government Documents Department

Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

Description: Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.
Date: January 2, 2004
Creator: Ozpineci, B.
Partner: UNT Libraries Government Documents Department

Defects in p-GaN and their atomic structure

Description: In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reverse polarity compared to the matrix. It was proposed that lateral overgrowth of the cavities restores matrix polarity on the defect base. Exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 {+-} 0.2 {angstrom} displacement between the Ga sublattices of these two areas. A [1{und 1}00]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid is observed
Date: October 8, 2004
Creator: Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J. & and O'Keefe, M.
Partner: UNT Libraries Government Documents Department

The role of AlN encapsulation of GaN during implant activation annealing

Description: With the demonstration of implant doping of GaN and the resulting need to perform the activation anneal at 1100 C, details of thermal stability of the GaN surface needs to be understood. This work reports on the use of a sputtered AlN encapsulant to preserve the surface of GaN during such annealing. The surface was characterized by formation of Pt/Au Schottky contacts and by AES. Schottky contacts deposited an GaN annealed wtih the AlN encapsulant displayed good rectification properties while those formed on GaN annealed uncapped approached ohmic behavior. AES analysis supports the hypothesis that the uncapped sample has lost N from the very near surface which creates N-vacancies that act as donors and thereby form an n{sup +}-surface layer.
Date: September 1, 1996
Creator: Zolper, J.C.; Rieger, D.J.; Baca, A.G.; Pearton, S.J.; Lee, J.W.; Vartulli, C.R. et al.
Partner: UNT Libraries Government Documents Department