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The Band Gap of AlGaN Alloys

Description: The band gap of AlXGal.XN is measured for the composition range 0s<0.45; the resulting bowing parameter, b=+O.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlXGal_XN: directly nucleated or buffered growths of AlXGal-XN initiated at temperatures T>800 C on sapphire usually lead to stronger apparent bowing (b> +1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+ 1.3 eV). Extant data suggests that the correct band-gap bowing parameter for AlXGal-XN is b=+O.62 (N.45) eV.
Date: January 29, 1999
Creator: Biefeld, R.M.; Crawford, M.H.; Han, J.; Lee, S.R.; Petersen, G.A. & Wright, A.F.
Partner: UNT Libraries Government Documents Department

Energy gap structure and tunneling characteristics of layered superconductors

Description: The authors have analyzed the energy gaps and density-of-states (DOS) of layered superconductors with two inequivalent layers in a unit cell along the c-axis. In the physically interesting parameter range where the interlayer hopping strengths of the quasiparticles are comparable to the critical temperature, the peaks in the DOS curve do not correspond to the order parameters (OP`s) of each layer, but depend on the OP`s and the interlayer hopping strengths in a complex manner. In contrast to a BCS superconductor, the DOS of layered systems have logarithmic singularities. The simulated tunneling characteristics bear close resemblance to experimental results.
Date: June 1, 1993
Creator: Liu, S.H. & Klemm, R.A.
Partner: UNT Libraries Government Documents Department

Universal bandgap bowing in group III nitride alloys

Description: The energy gaps of MBE-grown wurtzite-structure In{sub 1-x}Al{sub x}N alloys with x {le} 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of {approx}0.8 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and AlGaN, these results show a universal relationship between the bandgap variations of group III nitride alloys and their compositions.
Date: August 6, 2002
Creator: Wu, J.; Walukiewicz, W.; Yu, K.M.; Ager III, J.W.; Li, S.X.; Haller, E.E. et al.
Partner: UNT Libraries Government Documents Department

HOLE-HOLE INTERACTIONS AND THE PROPERTIES OF NUCLEAR MATTER

Description: Recently a number of authors have suggested modifications of the Brueckner theory of nuclear matter so as to include hole-hole interactions, as well as particle-particle interactions. Iwamoto has demonstrated that in a perturbation theory calculation the inclusion of hole-hole interaction makes no change in the ground-state energy through second order. The singular two-body potential between nucleons makes it difficult, however, to conclude anything about the contribution of these terms in nuclear matter. The formal similarity between the equation of Iwamoto and the equation for the energy gap in nuclear matter, coupled with the fact that the energy gap is very small at normal density, indicates that the effect of hole-hole interactions is probably only a very small change in the ground-state energy of nuclear matter. It is the point of this note to show that this conclusion is in fact correct, the demonstration proceeding by use of the separation method for evaluating the energy of nuclear matter.
Date: April 4, 1960
Creator: Moszkowski, S.A. & Sessler, A.M.
Partner: UNT Libraries Government Documents Department

Insulator to Metal Transition in Fluid Hydrogen

Description: The authors have investigated the insulator to metal transition (ITM) in fluid hydrogen using first principles simulations. Both density functional and quantum Monte Carlo calculations show that the electronic energy gap of the liquid vanishes at about 9 fold compression and 3000 K. At these conditions the computed conductivity values are characteristic of a poor metal. These findings are consistent with those of recent shock wave experiments but the computed conductivity is larger than the measured value. From the ab-initio results they conclude that the ITM is driven by molecular dissociation rather than disorder and that both temperature and pressure play a key role in determining structural changes in the fluid.
Date: June 15, 2003
Creator: Hood, R Q & Galli, G
Partner: UNT Libraries Government Documents Department

Upconversion of near GaAs bandgap photons to GaInP{sub 2} emission at the GaAs/(ordered) GaInP{sub 2} heterojunction

Description: The authors have observed upconversion of photoluminescence in several partially ordered GaInP{sub 2} epilayers grown on [100] oriented GaAs substrates. They found that this upconversion occurs even when the excitation photon energy is below the bandgap of GaAs but near the electron-acceptor transitions at {approximately} 1.49 eV. A two-step two-photon absorption model in which the conduction band alignment at the GaAs/GaInP{sub 2} is of type 2 is proposed to explain the results.
Date: September 1, 1996
Creator: Teo, K.L.; Su, Z.P.; Yu, P.Y. & Uchida, K.
Partner: UNT Libraries Government Documents Department

Surface Engineering of Silicon and Carbon by Pulsed-Laser Ablation

Description: Experiments are described in which a focused pulsed-excimer laser beam is used either to ablate a graphite target and deposit hydrogen-free amorphous carbon films, or to directly texture a silicon surface and produce arrays of high-aspect-ratio silicon microcolumns. In the first case, diamond-like carbon (or tetrahedral amorphous carbon, ta-C) films were deposited with the experimental conditions selected so that the masses and kinetic energies of incident carbon species were reasonably well controlled. Striking systematic changes in ta-C film properties were found. The sp{sup 3}-bonded carbon fraction, the valence electron density, and the optical (Tauc) energy gap ail reach their maximum values in films deposited at a carbon ion kinetic energy of {approximately}90 eV. Tapping-mode atomic force microscope measurements also reveal that films deposited at 90 eV are extremely smooth (rms roughness {approximately}1 {angstrom} over several hundred nm) and relatively free of particulate, while the surface roughness increases in films deposited at significantly lower energies. In the second set of experiments, dense arrays of high-aspect-ratio silicon microcolumns {approximately}20-40 {micro}m tall and {approximately}2 {micro}m in diameter were formed by cumulative nanosecond pulsed excimer laser irradiation of silicon wafers in air and other oxygen-containing atmospheres. It is proposed that microcolumn growth occurs through a combination of pulsed-laser melting of the tips of the columns and preferential redeposition of silicon on the molten tips from the ablated flux of silicon-rich vapor. The common theme in this research is that a focused pulsed-laser beam can be used quite generally to create an energetic flux, either the energetic carbon ions needed to form sp{sup 3} (diamond-like) bonds or the overpressure of silicon-rich species needed for microcolumn growth. Thus, new materials synthesis opportunities result from the access to nonequilibrium growth conditions provided by pulsed-laser ablation.
Date: February 28, 1999
Creator: Fowlkes, J.D.; Geohegan, D.B.; Jellison, G.E., Jr.; Lowndes, D.H.; Merkulov, V.I.; Pedraza, A.J. et al.
Partner: UNT Libraries Government Documents Department

Optical Properties of InGaAsN: A New 1eV Bandgap Material System

Description: InGaAsN is a new semiconductor alloy system with the remarkable property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In order to help understand the physical origin of this extreme deviation from the typically observed nearly linear dependence of alloy properties on concentration, we have investigated the pressure dependence of the excited state energies using both experimental and theoretical methods. We report measurements of the low temperature photohnninescence energy of the material for pressures between ambient and 110 kbar. We describe a simple, density-functional-theory-based approach to calculating the pressure dependence of low lying excitation energies for low concentration alloys. The theoretically predicted pressure dependence of the bandgap is in excellent agreement with the experimental data. Based on the results of our calculations, we suggest an explanation for the strongly non-linear pressure dependence of the bandgap that, surprisingly, does not involve a nitrogen impurity band. Addhionally, conduction-band mass measurements, measured by three different techniques, will be described and finally, the magnetoluminescence determined pressure coefficient for the conduction-band mass is measured.
Date: January 25, 1999
Creator: Allerman, A.A.; Fritz, I.J.; Jones, E.D.; Kurtz, S.R.; Modine, N.A.; Tozer, S.T. et al.
Partner: UNT Libraries Government Documents Department

The Effects of Biaxial Strain and Chemical Ordering on the Band Gap of InGaN

Description: The authors have performed first-principles calculations to examine the effects of biaxial strain and chemical ordering on the band gap of wurtzite In{sub x}Ga{sub 1{minus}x}N in the range 0 {le} x {le} 0.5. The results for unstrained, random alloys are in good agreement with theoretical estimates and measurements on unstrained zinc-blende alloys, but are in poor agreement with recent measurements on strained wurtzite alloys which display significantly lower gaps. Biaxial strain is found to have a non-linear effect on calculated alloy gaps, increasing them for x &lt; 0.25 and decreasing them for x &gt; 0.25. However, the overall agreement with measured wurtzite values remains poor. Chemical ordering along the [0001] direction in strained alloys is found to decrease the band gaps considerably, yielding much improved agreement with measurements. They discuss their results with regard to current theories concerning the optical properties of wurtzite InGaN alloys.
Date: July 17, 2000
Creator: Wright, Alan F. & van Schilfgaarde, Mark
Partner: UNT Libraries Government Documents Department

Wave propagation in ordered, disordered, and nonlinear photonic band gap materials

Description: Photonic band gap materials are artificial dielectric structures that give the promise of molding and controlling the flow of optical light the same way semiconductors mold and control the electric current flow. In this dissertation the author studied two areas of photonic band gap materials. The first area is focused on the properties of one-dimensional PBG materials doped with Kerr-type nonlinear material, while, the second area is focused on the mechanisms responsible for the gap formation as well as other properties of two-dimensional PBG materials. He first studied, in Chapter 2, the general adequacy of an approximate structure model in which the nonlinearity is assumed to be concentrated in equally-spaced very thin layers, or 6-functions, while the rest of the space is linear. This model had been used before, but its range of validity and the physical reasons for its limitations were not quite clear yet. He performed an extensive examination of many aspects of the model's nonlinear response and comparison against more realistic models with finite-width nonlinear layers, and found that the d-function model is quite adequate, capturing the essential features in the transmission characteristics. The author found one exception, coming from the deficiency of processing a rigid bottom band edge, i.e. the upper edge of the gaps is always independent of the refraction index contrast. This causes the model to miss-predict that there are no soliton solutions for a positive Kerr-coefficient, something known to be untrue.
Date: December 10, 1999
Creator: Lidorikis, Elefterios
Partner: UNT Libraries Government Documents Department

Spectral ellipsometry of GaSb: Experiment and modelling

Description: The optical constants {epsilon}(E)[{equals}{epsilon}{sub 1}(E) + i{epsilon}{sub 2}(E)] of single crystal GaSb at 300K have been measured using spectral ellipsometry in the range of 0.3--5.3 eV. The {epsilon}(E) spectra displayed distinct structures associated with critical points (CPs) at E{sub 0}(direct gap), spin-orbit split E{sub 0} + {Delta}{sub 0} component, spin-orbit split (E{sub 1}), E{sub 1} + {Delta}{sub 1} and (E{sub 0}{prime}), E{sub 0}{prime} + {Delta}{sub 0}{prime} doublets, as well as E{sub 2}. The experimental data over the entire measured spectral range (after oxide removal) has been fit using the Holden model dielectric function [Phys.Rev.B 56, 4037 (1997)] based on the electronic energy-band structure near these CPs plus excitonic and band-to-band Coulomb enhancement effects at E{sub 0}, E{sub 0} + {Delta}{sub 0}and the E{sub 1}, E{sub 1} + {Delta}{sub 1} doublet. In addition to evaluating the energies of these various band-to-band CPs, information about the binding energy (R{sub 1}) of the two-dimensional exciton related to the E{sub 1}, E{sub 1} + {Delta}{sub 1} CPS was obtained. The value of R{sub 1} was in good agreement with effective mass/{rvec k} {center_dot} {rvec p} theory. The ability to evaluate R{sub 1} has important ramifications for recent first-principles band structure calculations which include exciton effects at E{sub 0}, E{sub 1}, and E{sub 2}.
Date: May 1, 1999
Creator: Charache, G.W.; Mu {tilde n}oz, M.; Wei, K.; Pollak, F.H. & Freeouf, J.L.
Partner: UNT Libraries Government Documents Department

Reciprocal-space and real-space analyses of compositional modulation in InAs/AlAs short-period superlattices

Description: The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP is examined. The use of x-ray diffraction, TEM, AFM, and STEM to characterize the modulations is discussed. Combining the information from these techniques gives increased insight into the phenomenon and how to manipulate it. Diffraction measures the intensity of modulation and its wavelength, and is used to identify growth conditions giving strong modulation. The TEM and STEM analyses indicate that local compositions are modulated by as much as 0.38 InAs mole fraction. Plan-view images show that modulated structures consists of short ({approx_lt}0.2 {micro}m) In-rich wires with a 2D organization in a (001) growth plane. However, growth on miscut substrates can produce a single modulation along the miscut direction with much longer wires ({approx_gt}0.4 {micro}m), as desired for potential applications. Photoluminescence studies demonstrate that the modulation has large effects on the bandgap energy of the superlattice.
Date: January 25, 2000
Creator: FOLLSTAEDT,DAVID M.; LEE,STEPHEN R.; RENO,JOHN L.; JONES,ERIC D.; TWESTEN,R.D.; NORMAN,A.G. et al.
Partner: UNT Libraries Government Documents Department

Coexistence of Haldane Gap Excitations and Long-Range Order in R{sub 2}BaNiO{sub 5} (R=Rare Earth)

Description: R2BaNiO5 (R = rare earth) quasi-1-D antiferromagnets are structurally equivalent to the well-studied 1-D S = 1 Haldane-gap compound Y2BaNiO5. Unlike the Y-nickelate though, these materials undergo 3-D magnetic ordering at finite temperatures. Recent inelastic neutron scattering studies of Pr2BaNiO5 and (Nd(x)Y(1-x))2BaNiO5 revealed purely one-dimensional gap excitations that propagate exclusively on the Ni-chains and are strikingly similar to Haldane gap modes in Y2BaNiO5. In the ordered phase these excitations survive and actually coexist with conventional spin waves. The results suggest that the Haldane singlet ground state of the Ni-chains is not fully destroyed by Neel ordering.
Date: June 19, 1997
Creator: Zheludev, A.
Partner: UNT Libraries Government Documents Department

Optical properties of spontaneous lateral composition modulations in AlAs/InAs short-period superlattices

Description: The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of a AlAs/InAs short-period superlattice, on the electronic band structure is investigated using photo-transmission and photoluminescence spectroscopy. Compared with uniform layers of similar average composition, the presence of the composition modulation considerably reduces the band gap energy and produces strongly polarized emission and absorption spectra. The authors demonstrate that the dominant polarization can selectively be aligned along the [{bar 1}10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward [111]A or [101] resulted in modulation directions along [110] or [100], respectively, and dominant polarizations along a direction orthogonal to the respective composition modulation. Band gap reduction as high as 350 meV and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Polarization ratios up to 26 are observed in transmission spectra.
Date: May 11, 2000
Creator: FRANCOEUR,S.; ALSINA,F.; ZHANG,YONG; NORMAN,A.G.; MASCARENHAS,A.; JONES,ERIC D. et al.
Partner: UNT Libraries Government Documents Department

A Three-Dimensional Optical Photonic Crystal

Description: The search for a photonic crystal to confine optical waves in all three dimensions (3D) has proven to be a formidable task. It evolves from an early theoretical suggestion [1,2], a brief skepticism [3-5] and triumph in developing the mm-wave [6-8] and infrared 3D photonic crystals [9]. Yet, the challenge remains, as the ultimate goal for optoelectronic applications is to realize a 3D crystal at X=1.5 pm communication wavelengths. Operating at visible and near infrared wavelengths, X=1-2 pm, a photonic crystal may enhance the spontaneous emission rate [1, 10] and give rise to a semiconductor lasers with a zero lasing threshold[11, 12]. Another important application is optically switching, routing and interconnecting light [13,14] with an ultrafast transmission speed of terabits per second. A photonic crystal may also serve as a platform for integrating an all-optical circuitry with multiple photonic components, such as waveguides and switches, built on one chip [15]. In this Letter, we report on the successful fabrication of a working 3D crystal operating at optical L The minimum feature size of the 3D structure is 180 nanometers. The 3D crystal is free from defects over the entire 6-inch silicon wafer and has an absolute photonic band gap centered at A.-1.6 pm. Our data provides the first conclusive evidence for the existence of a full 3D photonic band gap in optical A. This development will pave the way to tinier, cheaper, more effective waveguides, optical switches and lasers.
Date: December 17, 1998
Creator: Fleming, J.G. & Lin, S.
Partner: UNT Libraries Government Documents Department