Description: The phase I program investigated the construction of electronic interconnections through the thickness of a silicon wafer. The novel aspects of the technology are that the length-to-width ratio of the channels is as high as 100:1, so that the minimum amount of real estate is used for contact area. Constructing a large array of these through-wafer interconnections will enable two circuit die to be coupled on opposite sides of a silicon circuit board providing high speed connection between the two.
Date: March 31, 2001
Creator: Beetz, C.P.; Steinbeck, J. & Hsueh, K.L.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department