Multiple Valley Couplings in Nanometer Si MOSFETs
Description:
We investigate the couplings between different energy band valleys in a MOSFET device using self-consistent calculations of million-atom Schroedinger-Poisson Equations. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. The MOSFET device is under nonequilibrium condition with a source-drain bias up to 2V, and a gate potential close to the threshold potential. We find that all the intervalley couplings are small, with the coup…
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Date:
July 11, 2008
Creator:
Wang, Lin-Wang; Deng, Hui-Xiong; Jiang, Xiang-Wei; Luo, Jun-Wei; Li, Shu-Shen; Xia, Jian-Bai et al.
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