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Synthesis of Pu-Doped Ceramic

Description: Plutonium-doped zircon containing about 10 wt% Pu was synthesized in this cooperative project between Russia and the United States conducted at the V. G. Khlopin Radium Institute. The sol-gel method was used for starting precursor preparation to provide complete mixing of initial components and to avoid dust formation inside the glove-box. The sol-gel process also gives interim Pu stabilization in the form of amorphous zirconium hydrosilicate (AZHS), which is a result of gel solidification. AZHS is a solid and relatively durable material that can be easy converted into crystalline zircon by pressureless sintering, thus avoiding significant radioactive contamination of laboratory equipment. A methanol-aqueous solution of tetraethoxysilane Si(OC2H5)4, Pu-nitrate, and zirconil oxynitrate was prepared in final stoichiometry of zircon (Zr,Pu)SiO4 80 wt% + zirconia (Zr,Pu)O2 20 wt%. Gelation occurred after 90 hours at room temperature. AZHS with excess of zirconia 20 wt% was obtained as an interim calcine product and then it was converted into zircon/zirconia ceramic by sintering at 1490 to 1500°C in air for different time periods. The samples obtained were studied by SRD and ESEM methods. It was found that both zircon yield and zircon cell parameters that are correlated with Pu incorporation depend on sintering time.
Date: September 2, 1998
Creator: Anderson, E. B
Partner: UNT Libraries Government Documents Department

Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

Description: An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises ytterbium doped apatite (Yb:Ca{sub 5}(PO{sub 4}){sub 3}F) or Yb:FAP, or ytterbium doped crystals structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.
Date: December 31, 1991
Creator: Krupke, W.F.; Payne, S.A.; Chase, L.L. & Smith, L.K.
Partner: UNT Libraries Government Documents Department

Recent developments in Cr{sup 2+}-doped II-VI compound lasers

Description: Transition-metal-doped zinc chalcogenide crystals have recently been investigated as potential mid-IR lasers. Tetrahedrally-coordinated Cr{sup 2+} ions are especially attractive as lasants on account of high luminescence quantum yields for emission in the 2000-3000 nm range. {sup 5}E radiative lifetimes and emission cross sections are respectively {approximately}10 {mu}sec and {approximately}10{sup -18} cm{sup 2}. The associated absorption band peaked at {approximately}1800 nm enables laser-diode pumping of the Cr{sup 2+} systems. Laser demonstrations with ZnS:Cr and ZnSe:Cr (using a MgF{sub 2}:Co{sup 2+} laser pump source) gave slope efficiencies up to 30%. Excited-state-absorption losses appear small, and passive losses dominate. Tuning experiments with a birefringent filter evidence a tuning range covering at least 2280 - 2530 nm. Cr-doped laser samples can be produced by Bridgman growth, seeded physical vapor transport, or diffusion doping.
Date: September 1, 1996
Creator: Page, R.H.; DeLoach, L.D.; Schaffers, K.I., Patel, F.D.; Beach, R.J.; Payne, S.A.; Krupke, W.F. et al.
Partner: UNT Libraries Government Documents Department

Upconversion-pumped luminescence efficiency of rare-earth-doped hosts sensitized with trivalent ytterbium

Description: We discuss the upconversion luminescence efficiencies of phosphors that generate red, green, and blue light. The phosphors studied are single crystals and powders co-doped with Er{sup 3+} and Yb{sup 3+}, and with Tm{sup 3+} and Yb{sup 3+}. The Yb ions are pumped near 980 nm; transfers of two or three quanta to the co-doped rare earth ion generate visible luminescence. The main contribution embodied in this work is the quantitative measurement of this upconversion efficiency, based on the use of a calibrated integrating sphere, determination of the fraction of pump light absorbed, and careful control of the pump laser beam profile. The green phosphors are the most efficient, yielding efficiency values as high as 4 %, with the red and blue materials giving 1 - 2 %. Saturation was observed in all cases, suggesting that populations of upconversion steps of the ions are maximized at higher power. Quasi-CW modeling of the intensity- dependent upconversion efficiency was attempted; input data included level lifetimes, transition cross sections, and cross-relaxation rate coefficients. The saturation of the Yb,Er:fluoride media is explained as the pumping of Er{sup 3+} ions into a bottleneck (long-lived state)- the {sup 4}I{sub 13/2} metastable level, making them unavailable for further excitation transfer. 32 refs., 5 figs., 3 tabs.
Date: July 26, 1997
Creator: Page, R.H.; Schaffers, K.I.; Waide, P.A.; Tassano, J.B.; Payne, S.A.; Kruplce, W.F. et al.
Partner: UNT Libraries Government Documents Department

Cooperative chemical rebonding in the segregation of impurities in silicon grain boundaries

Description: With ab initio calculations the authors show that the experimentally observed large segregation energies of As at Si grain boundaries can be explained by the formation of isolated dimers or ordered chains of dimers of threefold-coordinated As along the cores of grain boundary dislocations. They also find the intriguing possibility that As segregation may drive structural transformation of certain grain boundaries. Recently, they have obtained the first atomic-resolution STEM images of As in a Si grain boundary, consistent with the formation of As dimers. Segregation energy of As dimers was found to be significantly higher in isolated dislocation cores, where larger site-variation in strain than in grain boundaries lead to further lowering of the electronic levels of As deep into the bandgap.
Date: December 1996
Creator: Maiti, A.; Chisholm, M. F.; Pennycook, S. J. & Pantelides, S. T.
Partner: UNT Libraries Government Documents Department

Role of dopant counter-anion functionality in polyaniline salts/blends and implications to morphology

Description: Polyanilines are of particular current interest primarily due to their relative ease of synthesis, low cost and stable conductivity in air. The insulating, polyaniline emeraldine base (PANI-EB) form becomes electrically conducting by preferential protonation or doping the imine nitrogen sites to yield an electrically conducting polyaniline emeraldine salt (PANI-ES). In this paper, wide and small angle X-ray scattering techniques (i.e., WAXS and SAXS) and light microscopy are used to characterize the influence of the dopant`s structure on the morphology of both polyaniline salt and blend. In an attempt to modify the morphology of the PANI-ES, the authors have evaluated a number of doping acids (i.e., methane sulfonic acid (HMSA), butane sulfonic acid (HBSA), dodecyl benzene sulfonic acid (HDBSA) and camphor sulfonic acid (HCSA)) that vary in size and polarity to better understanding the role of the acid in PANI-ES`s morphology and the resulting electrical conductivity. The other goal was to investigate the effect of the counter-anion structure on the nature of the phase separated PANI-ES network. The shape of the PANI-ES network in the host polycaprolactam has important implications on the nature of conduction behavior and the final electrical conductivity of the blend.
Date: April 1, 1997
Creator: Hopkins, A.R.; Rasmussen, P.G.; Basheer, R.A.; Annis, B.K. & Wignall, G.D.
Partner: UNT Libraries Government Documents Department

Superconductivity in doped insulators

Description: It is shown that many synthetic metals, including high temperature superconductors are ``bad metals``, with such a poor conductivity that the usual meanfield theory of superconductivity breaks down because of anomalously large classical and quantum fluctuations of the phase of the superconducting order parameter. It is argued that the supression of a first order phase transition (phase separation) by the long-range Coulomb interaction leads to high temperature superconductivity accompanied by static or dynamical charge inhomogeneIty. Evidence in support of this picture for high temperature superconductors is described.
Date: December 31, 1995
Creator: Emery, V.J. & Kivelson, S.A.
Partner: UNT Libraries Government Documents Department

Wave propagation in ordered, disordered, and nonlinear photonic band gap materials

Description: Photonic band gap materials are artificial dielectric structures that give the promise of molding and controlling the flow of optical light the same way semiconductors mold and control the electric current flow. In this dissertation the author studied two areas of photonic band gap materials. The first area is focused on the properties of one-dimensional PBG materials doped with Kerr-type nonlinear material, while, the second area is focused on the mechanisms responsible for the gap formation as well as other properties of two-dimensional PBG materials. He first studied, in Chapter 2, the general adequacy of an approximate structure model in which the nonlinearity is assumed to be concentrated in equally-spaced very thin layers, or 6-functions, while the rest of the space is linear. This model had been used before, but its range of validity and the physical reasons for its limitations were not quite clear yet. He performed an extensive examination of many aspects of the model's nonlinear response and comparison against more realistic models with finite-width nonlinear layers, and found that the d-function model is quite adequate, capturing the essential features in the transmission characteristics. The author found one exception, coming from the deficiency of processing a rigid bottom band edge, i.e. the upper edge of the gaps is always independent of the refraction index contrast. This causes the model to miss-predict that there are no soliton solutions for a positive Kerr-coefficient, something known to be untrue.
Date: December 10, 1999
Creator: Lidorikis, Elefterios
Partner: UNT Libraries Government Documents Department

Local vibrational modes of Se-H complexes in AlSb

Description: Using infrared spectroscopy the authors have observed local vibrational modes (LVMs) arising from Se-H complexes in AlSb. At liquid-helium temperatures, hydrogenated AlSb:Se samples have three stretch mode peaks at 1,606.3, 1,608.6, and 1,615.7 cm{sup {minus}1}, whereas deuterated samples have only one peak at 1,173.4 cm{sup {minus}1}. The anomalous splitting of the se-H stretch mode may be explained by a resonance between the stretch mode and two multi-phonon modes. As the temperature or pressure is increased, the stretch mode and multi-phonon modes show anti-crossing behavior.
Date: September 1, 1996
Creator: McCluskey, M.D.; Hsu, L.; Haller, E.E.; Walukiewicz, W. & Becla, P.
Partner: UNT Libraries Government Documents Department

Scanning tunneling microscopy of Si donors in GaAs

Description: Using scanning tunneling microscopy, we have identified and characterized Si donors (Si{sub Ga}) in GaAs located on the (110) surface and in subsurface layers. Si{sub Ga} on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si{sub Ga} in subsurface layers appears as delocalized protrusions superimposed on the background lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si{sub Ga} Coulomb potential.
Date: July 1, 1993
Creator: Zheng, J.F.; Weber, E.R.; Liu, X.; Newman, N.; Ogletree, D.F. & Salmeron, M.B.
Partner: UNT Libraries Government Documents Department

Selectively excited blue luminescence in heavily Mg doped p-type GaN

Description: The emission at {approx}2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which includes potential fluctuations induced by heavy doping. We found a ''critical energy'' of {approx}2.8 eV for the BL. Electron-hole pairs with energies above this energy are able to achieve quasi-thermal equilibrium while those with energies below 2.8 eV are strongly ''localized''.
Date: December 31, 2000
Creator: Colton, John S. & Yu, Peter Y.
Partner: UNT Libraries Government Documents Department

Influence of dopants on defect formation in GaN

Description: Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals.
Date: October 15, 2001
Creator: Liliental-Weber, Z.; Jasinski, J.; Benamara, M.; Grzegory, I.; Porowski, S.; Lampert, D.J.H. et al.
Partner: UNT Libraries Government Documents Department

Influence of Mg and In on defect formation in GaN; bulk and MOCVD grown samples

Description: Transmission electron microscopy studies were applied to study GaN crystals doped with Mg. Both: bulk GaN:Mg crystals grown by a high pressure and high temperature process and those grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering (formation of polytypoids) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects with base on the basal planes and with walls inclined about 45O to these planes, empty inside (pinholes) were observed. A high concentration of these pyramidal defects was also observed in the MOCVD grown crystals. For samples grown with Mg delta doping planar defects were also observed especially at the early stages of growth followed by formation of pyramidal defects. TEM and x-ray studies of InxGa{sub 1{minus}x}N crystals for the range of 28-45% nominal In concentration shows formation of two sub-layers: strained and relaxed, with a much lower In concentration in the strained layer. Layers with the highest In concentration were fully relaxed.
Date: November 22, 2000
Creator: Liliental-Weber, Z.; Benamara, M.; Jasinski, J.; Swider, W.; Washburn, J.; Grzegory, I. et al.
Partner: UNT Libraries Government Documents Department

A Method to Improve Activation of Implanted Dopants in SiC

Description: Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) is achieved by using the highest possible processing temperature. This includes implantation at > 600 C followed by furnace annealing at temperatures as high as 1,750 C. Despite such aggressive and extreme processing, implantation suffers because of poor dopant activation, typically ranging between < 2%--50% with p-type dopants represented in the lower portion of this range and n-types in the upper. Additionally, high-temperature processing can led to several problems including changes in the stoichiometry and topography of the surface, as well as degradation of the electrical properties of devices. A novel approach for increasing activation of implanted dopants in SiC and lowering the activation temperature will be discussed. This approach utilizes the manipulation of the ion-induced damage to enhance activation of implanted dopants. It will be shown that nearly amorphous layers containing a small amount of residual crystallinity can be recrystallized at temperatures below 900 C with little residual damage. It will be shown that recrystallization traps a high fraction of the implanted dopant residing within the amorphous phase (prior to annealing) onto substitutional sites within the SiC lattice.
Date: January 16, 2001
Creator: Holland, O.W.
Partner: UNT Libraries Government Documents Department

Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

Description: It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.
Date: April 19, 2004
Creator: Tamargo, M. C. & Neumark, G. F.
Partner: UNT Libraries Government Documents Department

Screening study of mixed transition-metal oxides for use as cathodes in thermal batteries

Description: Over 100 candidates were examined, including commercial materials and many that were synthesized in house. The mixed oxides were based on Ti, V, Nb, Cr, Mo, W, Mn, Fe, Co, Ni, and Cu doped with other transition metals. A number of individual (single-metal) oxides were included for comparison. The candidates were tested in single cells with Li(Si) anodes and separators based on LiCl-KCl eutectic. Screening was done under constant-current conditions at current densities of 125 me/cm{sup 2} and, to a lesser extent, 50 me/cm{sup 2} at 500 C. Relative performance and limitations of the oxide cathodes are discussed.
Date: May 1, 1996
Creator: Guidotti, R.A. & Reinhardt, F.W.
Partner: UNT Libraries Government Documents Department

Low resistivity ohmic contacts to moderately doped n-GaAs with low temperature processing

Description: A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact resistivity of 1.5 {times} 10{sup {minus}6} {minus}cm{sup 2} has been obtained with a low anneal temperature of 250 C. Results for optimizing both time and temperature are reported and compared to GeAu n-GaAs contacts. Material compositions was analyzed by x-ray photoelectron spectroscopy and circuit metal interconnect contact resisitivity to the low-temperature processed PdGe contacts is reported. For the lowest temperature anneals considered, excess Ge on the ohmic contact layer is suspected of degrading interconnect metal contacts, while higher temperature anneals permitted interconnect metal formation with negligible contact resistivity. Atomic force microscopy measurements showed that the PdGe surface morphology is much more uniform than standard GeAu contacts.
Date: December 31, 1994
Creator: Lovejoy, M.L.; Howard, A.J.; Zavadil, K.R.; Rieger, D.J.; Shul, R.J. & Barnes, P.A.
Partner: UNT Libraries Government Documents Department

Investigation of effects of deposition parameters on composition, microstructure,a nd emission of RF sputtered SrS:Eu thin film phosphors

Description: There has been little systematic study of the cause of dead (inactive) layers in II-VI phosphors used in thin film electroluminescent devices. This paper discusses preparation and characterization of rf sputter deposited Eu-doped Sr sulfide (SrS:Eu) thin films for use in a study to determine the cause of the dead layer. (The dead layer`s behavior is likely influenced by thin film composition, crystallinity, and microstructure.) We have deposited SrS:Eu thin films in a repeatable, consistent manner and have characterized properties such as composition, crystallinity, and microstructure as well as photoluminescent (PL) and electroluminescent behavior. The composition was determined using Rutherford backscattering spectrometry and electron microprobe analysis. XRD was used to assess crystalline orientation and grain size, SEM to image thin film microstructure. Measuring the PL decay after subnanosecond laser excitation in the lowest absorption band of the dopant allowed direct measurement of the dopant luminescence efficiency.
Date: December 31, 1996
Creator: Droes, S.R.; Mueller-Mach, R.; Mueller, G.O. & Ruffner, J.A.
Partner: UNT Libraries Government Documents Department

Large persistent photochromic effect due to DX centers in AlSb doped with selenium

Description: A large photochromic effect has been observed in bulk AlSb crystals doped with Se. Illumination with light of energy higher than 1 eV leads to an increase of the absorption coefficient in the spectral range 0.1 to 1.6 eV. The enhanced absorption is persistent at temperatures below about K. The effect is a manifestation of a DX-like bistability of Se donors. The illumination transfers the from the DX center to a metastable hydrogenic level. The increased absorption with peaks around 0.2 eV and 0.5 is due to photoionization from the donor level to X{sub l} and X{sub 3} minima of the conduction band.
Date: April 1, 1995
Creator: Becla, P.; Witt, A.G.; Lagowski, J. & Walukiewicz, W.
Partner: UNT Libraries Government Documents Department