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Printability and inspectability of programmed pit defects on teh masks in EUV lithography

Description: Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.
Date: March 12, 2010
Creator: Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S. et al.
Partner: UNT Libraries Government Documents Department

Comparison of fast 3D simulation and actinic inspection for EUV masks with buries defects

Description: Aerial images for isolated defects and the interactions of defects with features are compared between the Actinic Inspection Tool (AIT) at Lawrence Berkeley National Laboratory (LBNL) and the fast EUV simulation program RADICAL. Comparisons between AIT images from August 2007 and RADICAL simulations are used to extract aberrations. At this time astigmatism was the dominant aberration with a value of 0.55 waves RMS. Significant improvements in the imaging performance of the AIT were made between August 2007 and December 2008. A good match will be shown between the most recent AIT images and RADICAL simulations without aberrations. These comparisons will demonstrate that a large defect, in this case 7nm tall on the surface, is still printable even if it is centered under the absorber line. These comparisons also suggest that the minimum defect size is between 1.5nm and 0.8nm surface height because a 1.5nm defect was printable but a 0.8nm was not. Finally, the image of a buried defect near an absorber line through focus will demonstrate an inversion in the effect of the defect from a protrusion of the dark line into the space to a protrusion of the space into the line.
Date: February 23, 2009
Creator: Clifford, C. H.; Wiraatmadja, S.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I. et al.
Partner: UNT Libraries Government Documents Department

Development of practical damage-mapping and inspection systems

Description: We have developed and are continuing to refine semi-automated technology for the detection and inspection of surface and bulk defects and damage in large laser optics Different manifestations of the DAMOCLES system (Damage and Artifact Mapping Of Coherent-Laser-Exposed Substrates) provide an effective and economical means of being able to detect, map and characterize surface and bulk defects which may become precursors of massive damage in optics when subjected to high-fluence laser irradiation Subsequent morphology and evolution of damage due to laser irradiation can be tracked efficiently The strength of the Damocles system is that it allows for immediate visual observation of defects in an entire optic, which can range up to l-meter dimensions, while also being able to provide digital map and magnified images of the defects with resolutions better than 5 µm.
Date: August 19, 1998
Creator: Rainer, F.
Partner: UNT Libraries Government Documents Department

Pyramidal Defects in GaN:Mg Grown with Ga Polarity

Description: Transmission electron microscopy (TEM) studies show formation of different types of Mg-rich defects in GaN. Types of defects strongly depend on crystal growth polarity. For bulk crystals grown with N-polarity, the planar defects are distributed at equal distances (20 unit cells of GaN). For growth with Ga-polarity (for both bulk and MOCVD grown crystals) a different type of defects have been found. These defects are three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and six walls formed on 1123 planes. The defects appear in [1120] and [1100] cross-section TEM micrographs as triangular and trapezoidal with sides inclined at 43 and 47 degrees to the base depending on the above observation directions, respectively. The dimension of these pyramids varies depending on growth method (50-1000 Angstrom), but the angle between the base and their sides remain the same. The direction from the tip of the pyramid to its base (and from the shorter to the longer base for trapezoidal defects) is along the Ga to N matrix bond direction. Analysis of the reconstructed exit wave phase image from the pyramid side indicates a shift of Ga atomic column positions from the matrix to the N position within the pyramid. In this way a 0.6{+-}0.2 Angstrom displacement can be measured on the pyramid side between Ga positions in the matrix and within the pyramid.
Date: February 15, 2005
Creator: Liliental-Weber, Zuzanna; Tomaszewicz, Tomasz; Zakharov, Dmitri & O'Keefe, Michael A.
Partner: UNT Libraries Government Documents Department


Description: Photon-stimulated desorption experiments were performed on the (001) face of LiF for photon energies near the F(2s) and Li(ls) edges (from 37 to 72 eV). There are structures in the F{sup +} yield above the F(2s) edge which are absent in the Li{sup +} spectrum, differences in detail in the Li{sup +} and F{sup +} yields near the Li(1s) edge, and considerable broadening of the desorption yields as compared to the bulk photoabsorption spectrum. The first observation of a strong x-ray, and visible, beam exposure dependence of ion yields from LiF and NaF is also presented. These results are discussed in terms of electronic and defect properties of alkali halides.
Date: November 1, 1983
Creator: Parks, C.C.; Shirley, D.A. & Loubriel, G.
Partner: UNT Libraries Government Documents Department

Removal of Lattice Imperfections that Impact the Optical Quality of Ti:Sapphire using Advanced Magnetorheological Finishing Techniques

Description: Advanced magnetorheological finishing (MRF) techniques have been applied to Ti:sapphire crystals to compensate for sub-millimeter lattice distortions that occur during the crystal growing process. Precise optical corrections are made by imprinting topographical structure onto the crystal surfaces to cancel out the effects of the lattice distortion in the transmitted wavefront. This novel technique significantly improves the optical quality for crystals of this type and sets the stage for increasing the availability of high-quality large-aperture sapphire and Ti:sapphire optics in critical applications.
Date: February 26, 2008
Creator: Menapace, J A; Schaffers, K I; Bayramian, A J; Davis, P J; Ebbers, C A; Wolfe, J E et al.
Partner: UNT Libraries Government Documents Department

Actinic imaging of native and programmed defects on a full-field mask

Description: We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMA TECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength (13.4 nm) actinic microscope, are compared with mask and printed-wafer images collected with scanning electron microscopy (SEM) and deep ultraviolet (DUV) inspection tools. We observed that defects that appear to be opaque in the SEM can be highly transparent to EUV light, and inversely, defects that are mostly transparent to the SEM can be highly opaque to EUV. The nature and composition of these defects, whether they appear on the top surface, within the multilayer coating, or on the substrate as buried bumps or pits, influences both their significance when printed, and their detectability with the available techniques. Actinic inspection quantitatively predicts the characteristics of printed defect images in ways that may not be possible with non-EUV techniques. As a quantitative example, we investigate the main structural characteristics of a buried pit defect based on EUV through-focus imaging.
Date: March 12, 2010
Creator: Mochi, I.; Goldberg, K. A.; Fontaine, B. La; Tchikoulaeva, A. & Holfeld, C.
Partner: UNT Libraries Government Documents Department

A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection

Description: The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm{sup 2}. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.
Date: March 12, 2010
Creator: Huh, S.; Ren, L.; Chan, D.; Wurm, S.; Goldberg, K. A.; Mochi, I. et al.
Partner: UNT Libraries Government Documents Department

EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

Description: Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.
Date: August 1, 2009
Creator: Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth et al.
Partner: UNT Libraries Government Documents Department

Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation

Description: The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose.
Date: December 7, 1998
Creator: Barbour, J.C.; Missert, N.; Son, K.-A; Wall, F.D. & Zavadil, K.R.
Partner: UNT Libraries Government Documents Department

Atomistic simulation of point defects and dislocations in bbc transition metals from first principles

Description: Using multi-ion interatomic potentials derived from first-principles generalized pseudopotential theory, we have been studying point defects and dislocations in bcc transition metals, with molybdenum (Mo) as a prototype. For point defects in Mo, the calculated vacancy formation and activation energies are in excellent agreement with experimental results. The energetics of six self-interstitial configurations in Mo have also been investigated. The <110> split dumb-bell is found to have the lowest formation energy, as is experimentally observed, but the corresponding migration energy is calculated to be 3--15 times higher than previous theoretical estimates. The atomic structure and energetics of <111> screw dislocations in Mo are now being investigated. We have found that the ``easy`` core configuration has a lower formation energy than the ``hard`` one, consistent with previous theoretical studies. The former has a distinctive 3-fold symmetry with a spread out of the dislocation core along the <112> directions, an effect which is driven by the strong angular forces present in these metals.
Date: January 19, 1996
Creator: Xu, W & Moriarty, J.A.
Partner: UNT Libraries Government Documents Department

Final report. Defects and transport in mixed oxides

Description: New results on the point defect chemistry of (Ni{sub x}Fe{sub 1-x}){sub 3-delta}O{sub 4} and on the cation tracer diffusion in this spinel solid solution are presented and discussed. The equation system for the defect chemistry of perovskites of the type A{sub 1-x}B{sub 1+x}O{sub 3-delta} have been worked out and used to derive Kr{umlt o}ger-Vink diagrams. The deviation from stoichiometry, delta, in LA{sub 1-x}Mn{sub 1+x}O{sub 3-delta} has been measured at 1100, 1200, and 1300 degrees Celsius as a function of the oxygen activity and the composition variable x. At high and low oxygen activities, the data were fit by taking into account the electrostatic interaction between the charge defects by making use of the Debye H{umlt u}ckel theory.
Date: December 13, 2001
Creator: Dieckmann, R {umlt u}diger
Partner: UNT Libraries Government Documents Department

Effects of self-irradiation on local crystal structure and 5flocalization in PuCoGa5

Description: The 18.5 K superconductor PuCoGa{sub 5} has many unusual properties, including those due to damage induced by self-irradiation. The superconducting transition temperature decreases sharply with time, suggesting a radiation-induced Frenkel defect concentration much larger than predicted by current radiation damage theories. Extended x-ray absorption fine-structure measurements demonstrate that while the local crystal structure in fresh material is well ordered, aged material is disordered much more strongly than expected from simple defects, consistent with strong disorder throughout the damage cascade region. These data highlight the potential impact of local lattice distortions relative to defects on the properties of irradiated materials and underscore the need for more atomic-resolution structural comparisons between radiation damage experiments and theory.
Date: October 20, 2006
Creator: Booth, C.H.; Daniel, M.; Wilson, R.E.; Bauer, E.D.; Mitchell,J.N.; Moreno, N.O. et al.
Partner: UNT Libraries Government Documents Department

Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects

Description: Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers’ drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.
Date: October 25, 2009
Creator: Bolotnikov, A.E.; Babalola, S.; Camarda, G.S.; Cui, Y.; Egarievwe, S.U.; Hawrami, R. et al.
Partner: UNT Libraries Government Documents Department


Description: Molecular dynamics calculations have been employed to simulate displacement cascades in neutron irradiated Mo. A total of 90 simulations were conducted for PKA energies between 1 and 40 keV and temperatures from 298 to 923K. The results suggest very little effect of temperature on final defect count and configuration, but do display a temperature effect on peak defect generation prior to cascade collapse. Cascade efficiency, relative to the NRT model, is computed to lie between 1/4 and 1/3 in agreement with simulations performed on previous systems. There is a tendency for both interstitials and vacancies to cluster together following cascade collapse producing vacancy rich regions surrounded by interstitials. Although coming to rest in close proximity, the point defects comprising the clusters generally do not lie within the nearest neighbor positions of one another, except for the formation of dumbbell di-interstitials. Cascades produced at higher PKA energies (20 or 40 keV) exhibit the formation of subcascades.
Date: September 8, 2003
Creator: Smith, Richard Whiting
Partner: UNT Libraries Government Documents Department

Atomistic models of point defects in plutonium metal.

Description: The aging properties of plutonium (Pu) metal and alloys are. driven by a combination of materials composit ion, p rocessing history, and self-irradiat ion effects . Understanding these driving forces requires a knowledge of both t h ermodynamic and defect properties of the material . The multiplicity of phases and the small changes in tempe rat u re, pressure, and/or stress that can induce phase changes lie at the heart of these properties . In terms of radiation damage, Pu metal represents a unique situation because of the large volume chan ges that accompany the phase changes . The most workable form of the meta l is the fcc (S-) phase, which in practice is stabi l ized by addit io n of a ll oying el eme n ts s u c h as Ga or Al. The thermodynamically stable phase at ambient conditions is the monoclinic (a-) phase, which, however, is 2 0 % lower i n volume th an the S phase . In stabilized Pu metal, there is an in t er play between th e n atu ral swe l li n g tendencies of fcc metals and the volume-contraction tendency of the u n d erlyin g thermodynamicall y stable phase. This study exp lores the point d efect pr operties that are necessary to model the long-term outcome of this interplay.
Date: January 1, 2003
Creator: Valone, S. M. (Steven M.); Baskes, M. I. (Michael I.); Uberuaga, B. P. (Blas Pedro) & Voter, A. F.
Partner: UNT Libraries Government Documents Department