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Comparison of fast 3D simulation and actinic inspection for EUV masks with buries defects

Description: Aerial images for isolated defects and the interactions of defects with features are compared between the Actinic Inspection Tool (AIT) at Lawrence Berkeley National Laboratory (LBNL) and the fast EUV simulation program RADICAL. Comparisons between AIT images from August 2007 and RADICAL simulations are used to extract aberrations. At this time astigmatism was the dominant aberration with a value of 0.55 waves RMS. Significant improvements in the imaging performance of the AIT were made between August 2007 and December 2008. A good match will be shown between the most recent AIT images and RADICAL simulations without aberrations. These comparisons will demonstrate that a large defect, in this case 7nm tall on the surface, is still printable even if it is centered under the absorber line. These comparisons also suggest that the minimum defect size is between 1.5nm and 0.8nm surface height because a 1.5nm defect was printable but a 0.8nm was not. Finally, the image of a buried defect near an absorber line through focus will demonstrate an inversion in the effect of the defect from a protrusion of the dark line into the space to a protrusion of the space into the line.
Date: February 23, 2009
Creator: Clifford, C. H.; Wiraatmadja, S.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I. et al.
Partner: UNT Libraries Government Documents Department

Pyramidal Defects in GaN:Mg Grown with Ga Polarity

Description: Transmission electron microscopy (TEM) studies show formation of different types of Mg-rich defects in GaN. Types of defects strongly depend on crystal growth polarity. For bulk crystals grown with N-polarity, the planar defects are distributed at equal distances (20 unit cells of GaN). For growth with Ga-polarity (for both bulk and MOCVD grown crystals) a different type of defects have been found. These defects are three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and six walls formed on 1123 planes. The defects appear in [1120] and [1100] cross-section TEM micrographs as triangular and trapezoidal with sides inclined at 43 and 47 degrees to the base depending on the above observation directions, respectively. The dimension of these pyramids varies depending on growth method (50-1000 Angstrom), but the angle between the base and their sides remain the same. The direction from the tip of the pyramid to its base (and from the shorter to the longer base for trapezoidal defects) is along the Ga to N matrix bond direction. Analysis of the reconstructed exit wave phase image from the pyramid side indicates a shift of Ga atomic column positions from the matrix to the N position within the pyramid. In this way a 0.6{+-}0.2 Angstrom displacement can be measured on the pyramid side between Ga positions in the matrix and within the pyramid.
Date: February 15, 2005
Creator: Liliental-Weber, Zuzanna; Tomaszewicz, Tomasz; Zakharov, Dmitri & O'Keefe, Michael A.
Partner: UNT Libraries Government Documents Department

Development of practical damage-mapping and inspection systems

Description: We have developed and are continuing to refine semi-automated technology for the detection and inspection of surface and bulk defects and damage in large laser optics Different manifestations of the DAMOCLES system (Damage and Artifact Mapping Of Coherent-Laser-Exposed Substrates) provide an effective and economical means of being able to detect, map and characterize surface and bulk defects which may become precursors of massive damage in optics when subjected to high-fluence laser irradiation Subsequent morphology and evolution of damage due to laser irradiation can be tracked efficiently The strength of the Damocles system is that it allows for immediate visual observation of defects in an entire optic, which can range up to l-meter dimensions, while also being able to provide digital map and magnified images of the defects with resolutions better than 5 µm.
Date: August 19, 1998
Creator: Rainer, F.
Partner: UNT Libraries Government Documents Department

Atomistic simulation of point defects and dislocations in bbc transition metals from first principles

Description: Using multi-ion interatomic potentials derived from first-principles generalized pseudopotential theory, we have been studying point defects and dislocations in bcc transition metals, with molybdenum (Mo) as a prototype. For point defects in Mo, the calculated vacancy formation and activation energies are in excellent agreement with experimental results. The energetics of six self-interstitial configurations in Mo have also been investigated. The <110> split dumb-bell is found to have the lowest formation energy, as is experimentally observed, but the corresponding migration energy is calculated to be 3--15 times higher than previous theoretical estimates. The atomic structure and energetics of <111> screw dislocations in Mo are now being investigated. We have found that the ``easy`` core configuration has a lower formation energy than the ``hard`` one, consistent with previous theoretical studies. The former has a distinctive 3-fold symmetry with a spread out of the dislocation core along the <112> directions, an effect which is driven by the strong angular forces present in these metals.
Date: January 19, 1996
Creator: Xu, W & Moriarty, J.A.
Partner: UNT Libraries Government Documents Department

BEAM EXPOSURE DEPENDENCE AND MECHANISMS OF PHOTON-STIMULATED DESORPTION FROM ALKALI FLUORIDES

Description: Photon-stimulated desorption experiments were performed on the (001) face of LiF for photon energies near the F(2s) and Li(ls) edges (from 37 to 72 eV). There are structures in the F{sup +} yield above the F(2s) edge which are absent in the Li{sup +} spectrum, differences in detail in the Li{sup +} and F{sup +} yields near the Li(1s) edge, and considerable broadening of the desorption yields as compared to the bulk photoabsorption spectrum. The first observation of a strong x-ray, and visible, beam exposure dependence of ion yields from LiF and NaF is also presented. These results are discussed in terms of electronic and defect properties of alkali halides.
Date: November 1, 1983
Creator: Parks, C.C.; Shirley, D.A. & Loubriel, G.
Partner: UNT Libraries Government Documents Department

Final report. Defects and transport in mixed oxides

Description: New results on the point defect chemistry of (Ni{sub x}Fe{sub 1-x}){sub 3-delta}O{sub 4} and on the cation tracer diffusion in this spinel solid solution are presented and discussed. The equation system for the defect chemistry of perovskites of the type A{sub 1-x}B{sub 1+x}O{sub 3-delta} have been worked out and used to derive Kr{umlt o}ger-Vink diagrams. The deviation from stoichiometry, delta, in LA{sub 1-x}Mn{sub 1+x}O{sub 3-delta} has been measured at 1100, 1200, and 1300 degrees Celsius as a function of the oxygen activity and the composition variable x. At high and low oxygen activities, the data were fit by taking into account the electrostatic interaction between the charge defects by making use of the Debye H{umlt u}ckel theory.
Date: December 13, 2001
Creator: Dieckmann, R {umlt u}diger
Partner: UNT Libraries Government Documents Department

Removal of Lattice Imperfections that Impact the Optical Quality of Ti:Sapphire using Advanced Magnetorheological Finishing Techniques

Description: Advanced magnetorheological finishing (MRF) techniques have been applied to Ti:sapphire crystals to compensate for sub-millimeter lattice distortions that occur during the crystal growing process. Precise optical corrections are made by imprinting topographical structure onto the crystal surfaces to cancel out the effects of the lattice distortion in the transmitted wavefront. This novel technique significantly improves the optical quality for crystals of this type and sets the stage for increasing the availability of high-quality large-aperture sapphire and Ti:sapphire optics in critical applications.
Date: February 26, 2008
Creator: Menapace, J A; Schaffers, K I; Bayramian, A J; Davis, P J; Ebbers, C A; Wolfe, J E et al.
Partner: UNT Libraries Government Documents Department

EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

Description: Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.
Date: August 1, 2009
Creator: Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth et al.
Partner: UNT Libraries Government Documents Department

Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation

Description: The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose.
Date: December 7, 1998
Creator: Barbour, J.C.; Missert, N.; Son, K.-A; Wall, F.D. & Zavadil, K.R.
Partner: UNT Libraries Government Documents Department

Interaction between point defects and edge dislocation in BCC iron

Description: We present results of atomistic simulations of the interaction between self interstitial atoms and vacancies with edge dislocations in BCC iron. The calculations are carried out using molecular dynamics with an energy minimization scheme based on the quasi-Newton approach and use the Finnis-Sinclair interatomic potential for BCC iron developed by Ackland et al. Large anisotropy in the strain field of self interstitials is observed and it causes strong interaction with edge dislocations even when the defect is located on the dislocation glide plane. For vacancies, the relaxation volume is smaller and much more isotropic, which results in a far weaker interaction with the dislocation. A temperature dependent capture radius for vacancies and self interstitials is extracted from the simulations. The difference between the capture radii of vacancies and self interstitials is used to define the sink strength of the dislocation. Large deviations are observed from the predictions of elasticity based on treating point defects as isotropic dilatational centers. Further, the capture radius of edge dislocations in BCC iron is observed to be small and is of the order of l-3 nm for self interstitials.
Date: October 12, 1998
Creator: Diaz de la Rubia, T. & Shastry, V.
Partner: UNT Libraries Government Documents Department

Point defect production, geometry and stability in silicon: A molecular dynamics simulation study

Description: We present results of molecular dynamics computer simulation studies of the threshold energy for point defect production in silicon. We employ computational cells with 8000 atoms at ambient temperature of 10 K that interact via the Stillinger-Weber potential. Our simulations address the orientation dependence of the defect production threshold as well as the structure and stability of the resulting vacancy-interstitial pairs. Near the <111> directions, a vacancy tetrahedral-interstitial pair is produced for 25 eV recoils. However, at 30 eV recoil energy, the resulting interstitial is found to be the <110> split dumbbell configuration. This Frenkel pair configuration is lower in energy than the former by 1.2 eV. Moreover, upon warming of the sample from 10 K the tetrahedral interstitial converts to a <110> split before finally recombining with the vacancy. Along <100> directions, a vacancy-<110> split interstitial configuration is found at the threshold energy of 22 eV. Near <110> directions, a wide variety of closed replacement chains are found to occur for recoil energies up to 45 eV. At 45 eV, the low energy vacancy-<l 10> split configuration is found. At 300 K, the results are similar. We provide details on the atomic structure and relaxations near these defects as well as on their mobilities.
Date: February 1, 1994
Creator: Caturla, M.J.; Rubia, T.D. de la & Gilmer, G.H.
Partner: UNT Libraries Government Documents Department

Fermi level stabilization energy in group III-nitrides

Description: Energetic particle irradiation is used to systematically introduce point defects into In{sub 1-x}Ga{sub x}N alloys over the entire composition range. Three types of energetic particles (electrons, protons, and {sup 4}He{sup +}) are used to produce a displacement damage dose spanning five decades. In InN and In-rich InGaN the free electron concentration increases with increasing irradiation dose but saturates at a sufficiently high dose. The saturation is due to Fermi level pinning at the Fermi Stabilization Energy (E{sub FS}), which is located at 4.9 eV below the vacuum level. Electrochemical capacitance-voltage (ECV) measurements show that the pinning of the surface Fermi energy at E{sub FS} is also responsible for the surface electron accumulation in as-grown InN and In-rich InGaN alloys. The results are in agreement with the amphoteric defect model that predicts that the same type of native defects are responsible for the Fermi level pinning in both cases.
Date: January 7, 2005
Creator: Li, S.X.; Yu, K.M.; Wu, J.; Jones, R.E.; Walukiewicz, W.; AgerIII, J.W. et al.
Partner: UNT Libraries Government Documents Department

Effects of self-irradiation on local crystal structure and 5flocalization in PuCoGa5

Description: The 18.5 K superconductor PuCoGa{sub 5} has many unusual properties, including those due to damage induced by self-irradiation. The superconducting transition temperature decreases sharply with time, suggesting a radiation-induced Frenkel defect concentration much larger than predicted by current radiation damage theories. Extended x-ray absorption fine-structure measurements demonstrate that while the local crystal structure in fresh material is well ordered, aged material is disordered much more strongly than expected from simple defects, consistent with strong disorder throughout the damage cascade region. These data highlight the potential impact of local lattice distortions relative to defects on the properties of irradiated materials and underscore the need for more atomic-resolution structural comparisons between radiation damage experiments and theory.
Date: October 20, 2006
Creator: Booth, C.H.; Daniel, M.; Wilson, R.E.; Bauer, E.D.; Mitchell,J.N.; Moreno, N.O. et al.
Partner: UNT Libraries Government Documents Department

Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects

Description: Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers’ drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.
Date: October 25, 2009
Creator: Bolotnikov, A.E.; Babalola, S.; Camarda, G.S.; Cui, Y.; Egarievwe, S.U.; Hawrami, R. et al.
Partner: UNT Libraries Government Documents Department

MOLECULAR DYNAMICS SIMULATIONS OF DISPLACEMENT CASCADES IN MOLYBDENUM

Description: Molecular dynamics calculations have been employed to simulate displacement cascades in neutron irradiated Mo. A total of 90 simulations were conducted for PKA energies between 1 and 40 keV and temperatures from 298 to 923K. The results suggest very little effect of temperature on final defect count and configuration, but do display a temperature effect on peak defect generation prior to cascade collapse. Cascade efficiency, relative to the NRT model, is computed to lie between 1/4 and 1/3 in agreement with simulations performed on previous systems. There is a tendency for both interstitials and vacancies to cluster together following cascade collapse producing vacancy rich regions surrounded by interstitials. Although coming to rest in close proximity, the point defects comprising the clusters generally do not lie within the nearest neighbor positions of one another, except for the formation of dumbbell di-interstitials. Cascades produced at higher PKA energies (20 or 40 keV) exhibit the formation of subcascades.
Date: September 8, 2003
Creator: Smith, Richard Whiting
Partner: UNT Libraries Government Documents Department

Point Defects in Binary Laves-Phase Alloys

Description: Point defect mechanisms in the binary C15 NbCr{sub 2} and NbCo{sub 2}, and C14 NbFe{sub 2} systems on both sides of stoichiometry was studied and clarified by both bulk density and X-ray lattice parameter measurements. It was found that the vacancy concentrations in these systems after quenching from 1000 C are essentially zero. The constitutional defects on both sides of stoichiometry for these systems were found to be of the anti-site type in comparison with the model predictions. However, thermal vacancies exhibiting a maximum at the stoichiometric composition were obtained in NbCr{sub 2} laves phase alloys after quenching from 1400 C. These could be completely eliminated by annealing at 1000 C. Anti-site hardening was found on both sides of stoichiometry for all three Laves phase systems studied. Furthermore, the thermal vacancies in NbCr{sub 2} alloys after quenching from 1400 C were found to soften the Laves phase. The anti-site hardening of the Laves phases is similar to that of the B2 compounds, while the thermal vacancy softening is unique to the Laves phase. Both the anti-site defects and thermal vacancies do not significantly affect the fracture toughness of the Laves phases.
Date: November 30, 1998
Creator: Liaw, P.K.; Liu, C.T.; Pike, L.M. & Zhu, J.H.
Partner: UNT Libraries Government Documents Department

Point Defect Incorporation During Diamond Chemical Vapor Deposition

Description: The incorporation of vacancies, H atoms, and sp{sup 2} bond defects into single-crystal homoepitaxial (100)(2x1)- and(111)-oriented CVD diamond was simulated by atomic-scale kinetic Monte Carlo. Simulations were performed for substrate temperatures from 600 C to 1200 C with 0.4% CH{sub 4} in the feed gas, and for 0.4% to 7% CH{sub 4} feeds with a substrate temperature of 800 C. The concentrations of incorporated H atoms increase with increasing substrate temperature and feed gas composition, and sp{sup 2} bond trapping increases with increasing feed gas composition. Vacancy concentrations are low under all conditions. The ratio of growth rate to H atom concentration is highest around 800-900 C, and the growth rate to sp{sup 2} ratio is maximum around 1% CH{sub 4}, suggesting that these conditions are ideal for economical diamond growth under the simulated conditions.
Date: August 2, 1999
Creator: Battaile, C.C.; Srolovitz, D.J. & Butler, J.E.
Partner: UNT Libraries Government Documents Department

Atomistic models of point defects in plutonium metal.

Description: The aging properties of plutonium (Pu) metal and alloys are. driven by a combination of materials composit ion, p rocessing history, and self-irradiat ion effects . Understanding these driving forces requires a knowledge of both t h ermodynamic and defect properties of the material . The multiplicity of phases and the small changes in tempe rat u re, pressure, and/or stress that can induce phase changes lie at the heart of these properties . In terms of radiation damage, Pu metal represents a unique situation because of the large volume chan ges that accompany the phase changes . The most workable form of the meta l is the fcc (S-) phase, which in practice is stabi l ized by addit io n of a ll oying el eme n ts s u c h as Ga or Al. The thermodynamically stable phase at ambient conditions is the monoclinic (a-) phase, which, however, is 2 0 % lower i n volume th an the S phase . In stabilized Pu metal, there is an in t er play between th e n atu ral swe l li n g tendencies of fcc metals and the volume-contraction tendency of the u n d erlyin g thermodynamicall y stable phase. This study exp lores the point d efect pr operties that are necessary to model the long-term outcome of this interplay.
Date: January 1, 2003
Creator: Valone, S. M. (Steven M.); Baskes, M. I. (Michael I.); Uberuaga, B. P. (Blas Pedro) & Voter, A. F.
Partner: UNT Libraries Government Documents Department

Determining the Critcial Size of EUV Mask Substrate Defects

Description: Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tool. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.
Date: February 28, 2008
Creator: Mccall, Monnikue M; Han, Hakseung; Cho, Wonil; Goldberg, Kenneth; Gullikson, Eric; Jeon, Chan-Uk et al.
Partner: UNT Libraries Government Documents Department