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IMPROVEMENT OF CdMnTe DETECTOR PERFORMANCE BY MnTe PURIFICATION

Description: Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.
Date: April 25, 2011
Creator: Kim, K. H.; Bolotnikov, A. E.; Camarda, G. S.; Tappero, R.; Hossain, A.; Cui, Y. et al.
Partner: UNT Libraries Government Documents Department

Investigations of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

Description: Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot, and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam X-ray topography (SWBXT), current-voltage (I-V) measurements, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors to irradiation exposure. The crystal from the stable growth region proved superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by two orders-of-magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau}){sub e} value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including for applications in medicine.
Date: October 6, 2009
Creator: Yang, G.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K. et al.
Partner: UNT Libraries Government Documents Department

SNM Movement Detection/Radiation Sensors and Advanced Materials Portfolio Review, CdMnTe (CMT) Gamma Ray Detectors

Description: The project goals are: (1) Develop CMT radiation detectors - Demonstrate feasibility (Phase 1 is complete) and Improve material properties and device performance; (2) This project will lead to novel radiation detectors - high detection efficiency, high energy-resolution, ambient-temperature operation, and low production cost; and (3) Such detectors are needed in areas of nonproliferation and national security for detection of SNM. Research highlights are: (1) We achieved our Phase-I goal - Demonstration of CMT detector performance approaching that of CZT detectors; (2) Demonstrated that In-doped CMT is much closer to its anticipated performance as radiation detectors than other alternative materials, TlBr and HgI{sub 2} - Large crystal volumes, 10{sup 10}{Omega}{center_dot}cm, 3 x 10{sup -3}cm{sup 2}/V, and stable response; and (3) Conducted material and device characterization experiments - Detectors: I-V, {mu}{sub e}, ({mu}{tau}){sub e}, internal E fields, energy spectra, and high-resolution x-ray response mapping data and Materials - DLTS, TCT, PL, EPDs, XRD, PCD and IR transmission.
Date: June 2, 2009
Creator: Bolotnikov, A.
Partner: UNT Libraries Government Documents Department

Investigation of Cd1-xMgxTe Alloys for Tandem Solar Cell Applications (Poster)

Description: Fabrication and characterization of Cd{sub 1-x}Mg{sub x}Te(CMT) alloys and to determine their potential for device applications. Main emphasis is on the development of the devices in 1.5 to 1.8 eV range for the top cell of two-junction tandem solar cells. The conclusions are: (1) CMT alloy films with a wide composition range were fabricated; (2) the optical band gap shows a systematic variation with composition and CMT alloy films withstood the commonly used device processing steps for CdTe; and (3) they have fabricated cells with 5% efficiency in the energy gap range of 1.5 to 1.7 eV and established the viability of CMT for device applications.
Date: May 1, 2006
Creator: Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A. et al.
Partner: UNT Libraries Government Documents Department