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AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different

Description: The morphology of Si{sub 1-Y} Ge{sub Y}:H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T{sub s}=300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H{sub 2} dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm{sup 2} area. All the images demonstrated ''grain'' like structure, which was characterized… more
Date: March 28, 2005
Creator: Sanchez, L & Kosarev, A
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Partner: UNT Libraries Government Documents Department
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Electrical and electron microscopy observations on defects in ion implanted silicon

Description: Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10/sup 16/ ions/cm/sup 2/ at both room-temperature and 600/sup 0/C. They were isochronally annealed at temperatures ranging from 400/sup 0/C to 900/sup 0/C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs.
Date: February 28, 1978
Creator: Ling, H.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Influence of Reaction with XeF2 on Surface Adhesion of Al and Al2O3 Surfaces

Description: The change of surface adhesion after fluorination of Al and Al{sub 2}O{sub 3} surfaces using XeF{sub 2} was investigated with atomic force microscopy. The chemical interaction between XeF{sub 2} and Al and Al{sub 2}O{sub 3} surfaces was studied by in situ x-ray photoelectron spectroscopy. Fresh Al and Al{sub 2}O{sub 3} surfaces were obtained by etching top silicon layers of Si/Al and Si/Al{sub 2}O{sub 3} with XeF{sub 2}. The surface adhesion and chemical composition were measured as a function … more
Date: July 28, 2008
Creator: Zhang, Tianfu; Park, Jeong Y.; Huang, Wenyu & Somorjai, Gabor A.
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Partner: UNT Libraries Government Documents Department
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Robotic Enrichment Processing of Roche 454 Titanium Emlusion PCR at the DOE Joint Genome Institute

Description: Enrichment of emulsion PCR product is the most laborious and pipette-intensive step in the 454 Titanium process, posing the biggest obstacle for production-oriented scale up. The Joint Genome Institute has developed a pair of custom-made robots based on the Microlab Star liquid handling deck manufactured by Hamilton to mediate the complexity and ergonomic demands of the 454 enrichment process. The robot includes a custom built centrifuge, magnetic deck positions, as well as heating and cooling … more
Date: May 28, 2010
Creator: Hamilton, Matthew; Wilson, Steven; Bauer, Diane; Miller, Don; Duffy-Wei, Kecia; Hammon, Nancy et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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A theoretical comparison of evolutionary algorithms and simulated annealing

Description: This paper theoretically compares the performance of simulated annealing and evolutionary algorithms. Our main result is that under mild conditions a wide variety of evolutionary algorithms can be shown to have greater performance than simulated annealing after a sufficiently large number of function evaluations. This class of EAs includes variants of evolutionary strategie and evolutionary programming, the canonical genetic algorithm, as well as a variety of genetic algorithms that have been a… more
Date: August 28, 1995
Creator: Hart, W.E.
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Partner: UNT Libraries Government Documents Department
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ANNEALING OF GAMMA RAY INDUCED CHANGES IN ANTIMONY DOPED GERMANIUM

Description: An investigatiori of the annealing of the radioinduced carrier concentration change in Sb-doped Ge in the range 370 to 455 l K was made. The irradiations were conducted at liquid nitrogen temperature using Co/ sup 60/ gamma irradiation. A model that explains the observed behavior is presented. On the basis of the model, the observed annealing consists of vacancy diffusion simultaneously to impurity sites and annihilation centers. Analysis of the activation energy for the annealing process yield… more
Date: May 28, 1963
Creator: Pigg, J.C.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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TRANSFORMATIONS IN URANIUM-BASE ALLOYS. Summary Report for December 14, 1955-March 31, 1957

Description: Transformation kinetics of binary U -Nb and ternary U-Nb-base alloys were investigated. Additions included zirconium, chromium, titanium, silicon, nickel, nnthenium, and vanadium. Encapsulated samples were given a homogenizstion anneal at 1000 or 1100/sup o/C, water-quenched from 906/sup o/C to retain the phase, and reheated to temperatures between 360 and 600/sup o/C. The metastability of the phase was examined by metallographic, hardness, resistometric, dilatometric and x-ray-diffraction tech… more
Date: June 28, 1957
Creator: Parry, S. J. S.; Holtz, F. C. & Van Thyne, R. J.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Direct Observations of Rapid Diffusion of Cu in Au Thin Films using In-Situ X-ray Diffraction

Description: In-situ x-ray diffraction was performed while annealing thin-film Au/Cu binary diffusion couples to directly observe diffusion at elevated temperatures. The temperature dependence of the interdiffusion coefficient was determined from isothermal measurements at 700 C, 800 C, and 900 C, where Cu and Au form a disordered continuous face centered cubic solid solution. Large differences in the lattice parameters of Au and Cu allowed the initial diffraction peaks to be easily identified, and later tr… more
Date: November 28, 2005
Creator: Elmer, J W; Palmer, T A & Specht, E D
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Nanoporous gold as a highly active substrate for surface-enhanced Raman scattering spectroscopy

Description: Colloidal solutions of metal nanoparticles are currently among most studied substrates for sensors based on surface-enhanced Raman scattering (SERS). However, such substrates often suffer from not being cost-effective, reusable, or stable. Here, we develop nanoporous Au as a highly active, tunable, a.ordable, stable, bio-compatible, and reusable SERS substrate. Nanoporous Au is prepared by a facile process of free corrosion of AgAu alloys followed by annealing. Results show that nanofoams with … more
Date: March 28, 2006
Creator: Kucheyev, S O; Hayes, J R; Biener, J & Hamza, A V
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Microstructure and thermal stability of transition metal nitrides and borides on GaN

Description: Microstructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100 C in N2 atmosphere does not lead to any observable metal/ semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800 C, when the heat treatment is performed in O2 ambient has been observed.
Date: June 28, 2000
Creator: Jasinski, J.; Kaminska, E.; Piotrowska, A.; Barcz, A. & Zielinski, M.
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Partner: UNT Libraries Government Documents Department
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InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

Description: The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar… more
Date: June 28, 2000
Creator: Jasinski, J.; Babinski, A.; Czeczott, M. & Bozek, R.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Stable, free-standing Ge nanocrystals

Description: Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nan… more
Date: January 28, 2005
Creator: Sharp, I. D.; Xu, Q.; Liao, C. Y.; Yi, D. O.; Beeman, J. W.; Liliental-Weber, Z. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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