Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation
Description: The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose.
Date: December 7, 1998
Creator: Barbour, J.C.; Missert, N.; Son, K.-A; Wall, F.D. & Zavadil, K.R.
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