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in publisher: "RCA Labs., Princeton, NJ USA"

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Photovoltaic mechanisms in polycrystalline thin-film silicon solar cells

Fundamental limitations on the performance of Si solar cells are shown to be quite different from those that have been conventionally invoked. Particularly for heavy-doping effects, the usual models are shown to be invalid and a new method is devised for calculating the reverse saturation current of a heavily doped device in which nearly all minority carriers reach the junction (viz., good blue-response). Calculations by the new method show: (1) increased doping above 10/sup 18/cm/sup -3/ does … more

Date: February 1, 1980

Creator: Redfield, D.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979

In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron… more

Date: February 1, 1980

Creator: Carlson, D. E.; Balberg, I.; Crandall, R. S.; Goldstein, B. C.; Hanak, J. J.; Pankove, J. I. et al.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Amorphous thin films for solar-cell applications. Quarterly report No. 1, 11 September-10 December 1979

Research progress on amorphous Si:H solar cells is described. Tasks include theoretical modeling, deposition and doping studies, experimental characterization of a-Si:H, formation of solar cell structures, and evaluation of solar cell parameters. A new method for determining the drift mobility of majority carriers in doped a-Si:H is discussed. Deposition and doping studies have been performed in an rf magnetron discharge system. Mass spectroscopy has been used to show that the major impurities … more

Date: December 1, 1979

Creator: Carlson, D. E.; Crandall, R. S.; Dresner, J.; Goldstein, B.; Hanak, J. J.; Moore, A. R. et al.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Automated array assembly, Phase II. Quarterly report No. 7, July 1-September 30, 1979

During this period, work continued on studies of three manufacturing sequences for solar cells based on ion-implanted junctions, furnace annealing, screen-printed contacts, and spray-on antireflection (AR) coatings. The starting material has been primarily solar-grade, n- and p-type 3-in.-diameter wafers; in addition, a small quantity of dendritic web has been received. A total of 1500 solar cells has been fabricated and evaluated. As a result of this work, two problems areas have not been iden… more

Date: October 1, 1979

Creator: D'Aiello, R. V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Low-cost epitaxial techniques for solar-cell fabrication. Quarterly technical progress report No. 1, September 26, 1979-December 24, 1979

During the frst quarter, a candidate low-cost silicon substrate, designated upgraded metallurgical grade (UMG) silicon, was obtained. The electrical, physical, and structural properties of three grades of this material were measured. An initial epitaxial growth technique was standardized and qualified for application to the growth of diagnostic and solar-cell structures. Such structures were grown on the three UMG grades of substrates and the properties of these layers were compared to those of… more

Date: January 1, 1980

Creator: D'Aiello, R. V. & Robinson, P. H.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Automated array assembly, Phase II. Interim report

The work conducted during a 1-year program designed to establish the technological readiness and provide verification for the elements of a manufacturing sequence which would ultimately be suitable for the large-scale production of silicon solar-array modules at a cost of less than $500/peak kW is summarized. A detailed description of the development and experimental verification for individual process steps is given. The results of a detailed experimental study and evaluation of the factors wh… more

Date: January 1, 1979

Creator: D'Aiello, R. V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Epitaxial silicon growth for solar cells. Final report

The objectives of this contract were: (1) to determine the feasibility of silicon epitaxial growth on low-cost silicon substrates for the development of silicon sheet capable of producing low-cost, high efficiency solar cells; (2) to achieve a goal of 12% (AM-0) efficient solar cells fabricated on thin epitaxial layers (<25 ..mu..m) grown on low-cost substrates; and (3) to evaluate the add-on cost for the epitaxial process and to develop low-cost epitaxial growth procedures for application i… more

Date: April 1, 1979

Creator: D'Aiello, R.V.; Robinson, P.H. & Richman, D.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Amorphous silicon solar cells. Quarterly report No. 2, 1 October 1976 to 31 December 1976

Infrared absorption measurements have shown that discharge-produced a-Si contains approx. 16 at. % of bonded hydrogen when deposited near room temperature and that the hydrogen content decreases to approx. 2 at. % for a substrate temperature of approx. 500/sup 0/C. This variation in the concentration of bonded hydrogen appears to be responsible for a reduction in the optical gap as the substrate temperature increases. Improvements in the photoluminescence, the photoconductivity, and the collect… more

Date: January 1, 1977

Creator: Carlson, D.E.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Automated Array Assembly, Phase II. Quarterly report No. 5, January 1-March 31, 1979

The work reported represents a new phase of activity directed toward a cost and performance evaluation of three manufacturing sequences designed to convert silicon sheet and wafers into solar-cell array modules. The details of these sequences are described, and a near-term cost analysis for each is given. The progress made during this quarter in materials acquisition, mask design, equipment setup and qualification, process verification and refinement, and new equipment design and construction i… more

Date: March 1, 1979

Creator: D'Aiello, R. V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Epitaxial silicon growth for solar cells. Quarterly report No. 3, April 1--June 30, 1978

The epitaxial growth of thin solar-cell structures was extended to include another potentially low-cost form of silicon: upgraded metallurgical grade silicon obtained from Dow Corning. An AM-1 efficiency of 12.4% was achieved with a cell structure having only 14 ..mu..m of silicon grown on the Dow Corning. The best efficiency obtained was 13% on a 50-..mu..m thick structure. It was found that titanium (2 x 10/sup 14/ A/cm/sup -3/ level) intentionally incorporated into the substrates primarily c… more

Date: July 1, 1978

Creator: D'Aiello, R.V.; Robinson, P.H. & Richman, D.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Thin-film polycrystalline silicon solar cells. Final report, September 11, 1978-September 10, 1979

The effect of grain boundaries on the performance of solar cells fabricated on Wacker Silso polycrystalline silicon substrates has been studied. Efficiencies of 8% (no AR coating) were obtained (11.2% with AR coating). This is 20% lower than the efficiency obtained for identically fabricated single-crystal cells. This reduction can be accounted for as follows: 4% reduction in V/sub oc/ due to grain boundaries, 8% reduction in J/sub sc/ due to grain boundaries, and 8% reduction in J/sub sc/ due … more

Date: November 1, 1979

Creator: Faughnan, B W

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Automated Array Assembly, Phase II. Quarterly report No. 4

The purpose of the overall program is to establish technological readiness and provide verification for the elements of a manufacturing sequence which would ultimately be suitable for the large-scale production of silicon solar-array modules at a selling price of less than $500/kW. A program and process plan for accomplishing this objective was developed and put into operation during the first quarter. The processing sequence is described. Three junction-formation processes are under considerat… more

Date: October 1, 1978

Creator: D'Aiello, R. V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980

Progress is reported on the following: theoretical modeling, deposition and doping studies, experimental methods for the characterization of a-Si:H, formation of solar-cell structures, theoretical and experimental evaluation of solar-cell parameters, and stability studies. (MHR)

Date: February 1, 1981

Creator: Carlson, D. E.; Balberg, I.; Crandall, R. S.; Dresner, J.; Goldstein, B.; Hanak, J. J. et al.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Automated array assembly. Quarterly report No. 3, July 1, 1976--September 30, 1976

A review of the quality of the various possible forms of the starting silicon material leads to the conclusion that wafers from Czochralski-pulled ingots are the only form of silicon which will be available for automated array processing for the next several years. A new calculational procedure has been developed and tested for the optimization of performance of both the front and back contact metallizations. The survey of present-day contact and interconnect metallization technology for silico… more

Date: September 1, 1976

Creator: Williams, B. F.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Automated array assembly. Annual report

The goal of the ERDA/JPL LSSA program of $0.50/W selling price for array modules in 1986 turns out to have been remarkably appropriate. An extensive and detailed analysis of technologies which could be related to array module manufacturing was completed and a minimum manufacturing cost in a highly automated line of $0.30/W was found assuming the silicon is free. The panels are of a double glass construction and are based on round wafers. Screen printed silver has been used as the metallization … more

Date: May 1, 1977

Creator: Williams, B. F.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Automated array assembly. Quarterly report No. 4

The production line will be used to fabricate 3-in.-diameter silicon solar cells using the elements of the manufacturing sequences identified previously as most likely to achieve the cost goal of $0.50/W. A plan for introducing and selecting variables was established including three major junction-formation techniques: ion implantation, gaseous (POCl/sub 3/), and spin-on diffusion sources. The testing and development of screen-printed metallization with evaporated Ti/Ag contacts used as a contr… more

Date: May 1, 1977

Creator: D'Aiello, R. V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Automated array assembly. Phase II. Final report, October 1977-December 1979

The philosophy of this project was to establish an experimental process line starting with 3-in.-diameter silicon wafers and consisting of junction formation using POCl/sub 3/ gaseous diffusion, screen-printed thick-film metallization, reflow solder interconnect, and double-glass lamination panel assembly. This experimental production line produced a sufficient number of solar cells to demonstrate the technological readiness of each of those process steps. Variations (of each process) were made… more

Date: October 1, 1980

Creator: D'Aiello, R. V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Epitaxial silicon growth for solar cells. Quarterly report No. 2

The objective of this program is to develop and apply epitaxial growth techniques to the fabrication of efficient solar cells on low-cost forms of silicon. Progress is reported. The efficiency of baseline epitaxial solar-cell structures of about 1 mil thickness grown on single-crystal substrates and processed with diffused junctions has been reproducibly established at approximately 13% (AM-1). Experiments were conducted in the growth of the entire cell structure including the junction layer. F… more

Date: April 1, 1978

Creator: D'Aiello, R.V.; Faughnan, B.W.; Robinson, P.H. & Richman, D.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Automated array assembly. Final report

Three main sections are included which describe a general technology assessment and manufacturing cost analysis; a near-term (1982) factory design; and the results of an experimental production study for the large-scale production of flat-panel silicon solar-cell arrays. The results of an extensive study and detailed analysis of technologies which could be related to array module manufacturing are presented. From this study, several manufacturing sequences emerge as candidates for satisfying th… more

Date: December 1, 1977

Creator: D'Aiello, R.V.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II. LSA Project. Final report, October 1, 1977-March 31, 1979

Amorphous CVD layers of silicon nitride and silicon oxynitride are prepared by chemical vapor deposition (CVD). The CVD layers are converted to ..cap alpha..- and ..beta..-Si/sub 3/N/sub 4/ in contact with molten silicon. Silicon nitride layers are converted initially to ..cap alpha..-Si/sub 3/N/sub 4/ with a low ..beta..-Si/sub 3/N/sub 4/ content. The ..cap alpha.. phase is then slowly converted to the ..beta.. phase accompanied by simultaneous decomposition. By contrast, silicon oxynitride (S… more

Date: December 1, 1979

Creator: Duffy, M. T.; Berkman, S.; Cullen, G. W.; D'Aiello, R. V. & Moss, H. I.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process: Task II, LSSA Project. Quarterly report No. 3

The thermal stability of CVD SiO/sub x/N/sub y/ layers in contact with molten silicon has been studied by x-ray analysis. The results indicate that these layers are converted to the ..cap alpha.. and ..beta.. phases of Si/sub 3/N/sub 4/ with the ..beta.. phase predominating. Results to date indicate that the ..beta.. phase is the more stable form in contact with molten silicon. This explains why CVD oxynitride layers appeared to be more stable in contact with molten silicon than CVD Si/sub 3/N/… more

Date: June 1, 1978

Creator: Duffy, M. T.; Berkman, S.; Moss, H. I. & Cullen, G. W.

Item Type: Report

Partner: UNT Libraries Government Documents Department

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Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II: LSSA project. Quarterly report No. 4

The results of emission spectroscopic analysis indicate that molten silicon (sessile drop) can remain in contact with hot-pressed Si/sub 3/N/sub 4/ (99.2% theoretical density) for prolonged periods without attaining the impurity content level of the nitride. It is interesting to note that, although MgO was used as binder (approx. 3.8%), Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. The conversion of CVD … more

Date: September 1, 1978

Creator: Duffy, M. T.; Berkman, S.; Moss, H. I. & Cullen, G. W.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II. LSSA Project. Quarterly report No. 5, October 1-December 31, 1978

Several ribbon growth experiments were performed in the Mark II ribbon growth facility from V-shaped dies coated with CVD Si/sub 3/N/sub 4/. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si/sub 3/N/sub 4/. Silicon oxynitride, Si/sub 2/N/sub 2/O, was examined with respect to thermal stability in contact with molten si… more

Date: December 1, 1978

Creator: Duffy, M. T.; Berkman, S.; Moss, H. I. & Cullen, G. W.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Amorphous thin films for solar-cell applications. Quarterly report No. 2, 11 December 1979-10 March 1980

Measurements of both primary and secondary photocurrents for photon energies between 0.58 and 2.0 eV in a-Si:H solar-cell structures have been used to provide information about the density of states above the valence band as well as show that holes are mobile deep in the bandgap. The drift mobility is independent of excitation energy, indicating that the majority carriers are excited to the same states, irrespective of the excitation energy. Deposition studies in the dc proximity system have sh… more

Date: March 1, 1980

Creator: Carlson, D. E.; Crandall, R. S.; Dresner, J.; Goldstein, B.; Hanak, J. J.; Moore, A. R. et al.

Item Type: Report

Partner: UNT Libraries Government Documents Department