Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen
Description:
Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N{sub 2} ambient without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range were obtained for a range of nitrogen pressures The maximum hole concentration equals the highest hole doping reported to date for any wide band gap II-VI co…
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Date:
April 1, 1995
Creator:
Lowndes, D. H.; Rouleau, C. M.; Budai, J. D.; Poker, D. B.; Geohegan, D. B.; Zhu, Shen et al.
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