Description: Implantation of uranium ions into silicon to a maximum dose of 6 x 10/sup 16/ atoms/cm/sup 2/, with a maximum concentration of 6 x 10/sup 21/ atoms/cm/sup 3/, has been carried out. This concentration corresponds to 12 at. % of uranium in the silicon host material. The implanted uranium content was measured by Rutherford backscattering and confirmed by a measurement of the alpha-particle activity of the buried uranium layer. The range and straggling of the uranium, and sputtering of the silicon target by uranium, were measured and are compared with theoretical estimates. The implantation was performed at an ion mean energy of 157 keV using a new kind of high current metal ion source.
Date: May 1, 1987
Creator: Brown, I.G.; Galvin, J.E. & Yu, K.M.
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