Applications of Heavy-Ion Rutherford Backscattering Spectrometry (HIRBS) to the analysis of contact structures on GaAs and Ge
Description: The use of Heavy-Ion Rutherford Backscattering Spectrometry (HIRBS) for the analysis of layered structures on GaAs and Ge substrates has been studied. Direct comparisons of data obtained using both /sup 16/O and /sup 4/He projectiles for the characterization of contact structures have demonstrated the advantages of HIRBS for the study of substrates with increased atomic masses due to the improved mass resolution of the method for high Z materials. We present results obtained from a study of thermally induced interactions between Ga As and Ge substrates and the metals Pt and Pd. Results of the analysis of multiple layered structures on GaAs and GaAlAs substrate with HIRBS are also discussed.
Date: September 1, 1984
Creator: Yu, K.M.; Jaklevic, J.M. & Haller, E.E.
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