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Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

Description: The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).
Date: June 1, 2012
Creator: Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L. & Wang, Q.
Partner: UNT Libraries Government Documents Department
open access

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

Description: We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and… more
Date: June 1, 2012
Creator: Yuan, H. C.; Oh, J.; Zhang, Y.; Kuznetsov, O. A.; Flood, D. J. & Branz, H. M.
Partner: UNT Libraries Government Documents Department
open access

Silicon Solar Cells with Front Hetero-contact and Aluminum Alloy Back Junction (Poster)

Description: The objectives of this report are: (1) to apply industrial back Al process in efficient n-wafer cells with a-Si:H front surface passivation; and (2) to evaluate the surface recombination velocity (SRV) of the a-Si:H passivated front surface with different surface preparation procedures.
Date: May 1, 2008
Creator: Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q. et al.
Partner: UNT Libraries Government Documents Department
open access

Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint

Description: We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.
Date: May 1, 2008
Creator: Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q. et al.
Partner: UNT Libraries Government Documents Department
open access

Hydride transfer made easy in the oxidation of alcohols catalyzed by choline oxidase

Description: Choline oxidase (E.C. 1.1.3.17) catalyzes the two-step, four-electron oxidation of choline to glycine betaine with betaine aldehyde as enzyme-associated intermediate and molecular oxygen as final electron acceptor (Scheme 1). The gem-diol, hydrated species of the aldehyde intermediate of the reaction acts as substrate for aldehyde oxidation, suggesting that the enzyme may use similar strategies for the oxidation of the alcohol substrate and aldehyde intermediate. The determination of the chemic… more
Date: June 8, 2008
Creator: Gadda, G.; Orville, A.; Pennati, A.; Francis, K.; Quaye, O.; Yuan, H. et al.
Partner: UNT Libraries Government Documents Department
open access

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint

Description: Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an ind… more
Date: May 1, 2008
Creator: Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R. et al.
Partner: UNT Libraries Government Documents Department
open access

Nature of room-temperature photoluminescence in ZnO

Description: The temperature dependence of the photoluminescence (PL) transitions associated with various excitons and their phonon replicas in high-purity bulk ZnO has been studied at temperatures from 12 K to above room temperature (320 K). Several strong PL emission lines associated with LO phonon replicas of free and bound excitons are clearly observed. The room temperature PL spectrum is dominated by the phonon replicas of the free exciton transition with the maximum at the first LO phonon replica. The… more
Date: November 11, 2004
Creator: Shan, W.; Walukiewicz, W.; Ager, J. W., III; Yu, K. M.; Yuan, H. B.; Xin, H. P. et al.
Partner: UNT Libraries Government Documents Department
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