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Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy

Description: Laser irradiated Si(100) surfaces were studied with an ultrahigh-vacuum scanning tunneling microscopy (STM) system. Our observations indicate that only the dimerized outermost atomic layer is removed if the laser fluence is below the melting threshold with a photon energy larger than the band gap. The newly exposed layer, surprisingly, did not have a dimerized atomic structure, but rather, resembled that of a bulk-terminated structure. The uncovered layer remained atomically smooth (no vacancies) even after 90% of the outermost layer was removed. A possible explanation of these observations is that atom removal occurs by a preferential breakage of the atomic bonds in defect sites. When the laser fluence was increased to levels above the melting threshold, extensive surface roughening occurs.
Date: July 1, 1995
Creator: Xu, Jun; Overbury, S.H. & Wendelken, J.F.
Partner: UNT Libraries Government Documents Department