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Carrier heating in disordered conjugated polymers in electric field

Description: The electric field dependence of charge carrier transport and the effect of carrier heating in disordered conjugated polymers were investigated. A parameter-free multiscale methodology consisting of classical molecular dynamics simulation for the generation of the atomic structure, large system electronic structure and electron-phonon coupling constants calculations and the procedure for extracting the bulk polymer mobility, was used. The results suggested that the mobility of a fully disordered poly(3-hexylthiophene) (P3HT) polymer increases with electric field which is consistent with the experimental results on samples of regiorandom P3HT and different from the results on more ordered regioregular P3HT polymers, where the opposite trend is often observed at low electric fields. We calculated the electric field dependence of the effective carrier temperature and showed however that the effective temperature cannot be used to replace the joint effect of temperature and electric field, in contrast to previous theoretical results from phenomenological models. Such a difference was traced to originate from the use of simplified Miller-Abrahams hopping rates in phenomenological models in contrast to our considerations that explicitly take into account the electronic state wave functions and the interaction with all phonon modes.
Date: January 26, 2010
Creator: Vukmirovic, Nenad & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Carrier hopping in disordered semiconducting polymers: How accurate is the Miller-Abrahams model?

Description: We performed direct calculations of carrier hopping rates in strongly disordered conjugated polymers based on the atomic structure of the system, the corresponding electronic states and their coupling to all phonon modes. We found that the dependence of hopping rates on distance and the dependence of the mobility on temperature are significantly different than the ones stemming from the simple Miller-Abrahams model, regardless of the choice of the parameters in the model. A model that satisfactorily describes the hopping rates in the system and avoids the explicit calculation of electron-phonon coupling constants was then proposed and verified. Our results indicate that, in addition to electronic density of states, the phonon density of states and the spatial overlap of the wavefunctions are the quantities necessary to properly describe carrier hopping in disordered conjugated polymers.
Date: July 30, 2010
Creator: Vukmirovic, Nenad & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

A divide-and-conquer linear scaling three dimensional fragment method for large scale electronic structure calculations

Description: We present a new linear scaling ab initio total energy electronic structure calculation method based on the divide-and-conquer strategy. This method is simple to implement, easily to parallelize, and produces very accurate results when compared with the direct ab initio method. The method has been tested using up to 8,000 processors, and has been used to calculate nanosystems up to 15,000 atoms.
Date: July 11, 2008
Creator: Wang, Lin-Wang; Zhao, Zhengji; Meza, Juan & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Effects of d-electrons in pseudopotential screened-exchange density functional calculations

Description: We report a theoretical study on the role of shallow d states in the screened-exchange local density approximation (sX-LDA) band structure of binary semiconductor systems. We found that the inaccurate pseudo-wavefunctions can lead to (1) an overestimation of the screened-exchange interaction between the localized d states and the delocalized higher energy s and p states and (2) an underestimation of the screened-exchange interaction between the d states. The resulting sX-LDA band structures have substantially smaller band gaps compared with experiments. We correct the pseudo-wavefunctions of d states by including the semicore s and p states of the same shell in the valence states. The correction of pseudo-wavefunctions yields band gaps and the d state binding energy with good agreements with experiments and the full potential linearized augmented planewave (FLAPW) calculations. Compared with the quasi-particle GW method, our sX-LDA results shows not only similar quality on the band gaps but also much better d state binding energy. Combined with its capability of ground state structure calculation, the sX-LDA is expected to be a valuable theoretical tool for the II-VI and III-V (especially the III-N) bulk semiconductors and nanostructure studies.
Date: August 11, 2008
Creator: Wang, Lin-Wang; Lee, Byounghak; Canning, Andrew & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Non-Bloch nature of alloy states in a conventional semiconductor alloy - GaxIn1-xP as an example

Description: Contrary to the conventional wisdom, electronic states in a 'well behaved' semiconductor alloy such as Ga{sub x}In{sub 1-x}P may drastically deviate from a Bloch state, which can be true even for band edge states if they are derived from degenerate critical points. For Ga{sub x}In{sub 1-x}P in the entire composition range, k-space spectral analyses are performed for the important critical points, revealing the significance of the (near) resonant inter-and intra-valley scatterings of the fluctuation potential in the alloy. The non-trivial implications of such scatterings on the transport and strain effect are discussed.
Date: July 11, 2008
Creator: Wang, Lin-Wang; Zhang, Yong; Mascarenhas, Angelo & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

Description: High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.
Date: July 11, 2008
Creator: Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang & Buhro, William E.
Partner: UNT Libraries Government Documents Department

Linear scaling 3D fragment method for large-scale electronic structure calculations

Description: We present a new linearly scaling three-dimensional fragment (LS3DF) method for large scale ab initio electronic structure calculations. LS3DF is based on a divide-and-conquer approach, which incorporates a novel patching scheme that effectively cancels out the artificial boundary effects due to the subdivision of the system. As a consequence, the LS3DF program yields essentially the same results as direct density functional theory (DFT) calculations. The fragments of the LS3DF algorithm can be calculated separately with different groups of processors. This leads to almost perfect parallelization on tens of thousands of processors. After code optimization, we were able to achieve 35.1 Tflop/s, which is 39% of the theoretical speed on 17,280 Cray XT4 processor cores. Our 13,824-atom ZnTeO alloy calculation runs 400 times faster than a direct DFT calculation, even presuming that the direct DFT calculation can scale well up to 17,280 processor cores. These results demonstrate the applicability of the LS3DF method to material simulations, the advantage of using linearly scaling algorithms over conventional O(N{sup 3}) methods, and the potential for petascale computation using the LS3DF method.
Date: July 11, 2008
Creator: Wang, Lin-Wang; Wang, Lin-Wang; Lee, Byounghak; Shan, HongZhang; Zhao, Zhengji; Meza, Juan et al.
Partner: UNT Libraries Government Documents Department

Multiple Valley Couplings in Nanometer Si MOSFETs

Description: We investigate the couplings between different energy band valleys in a MOSFET device using self-consistent calculations of million-atom Schroedinger-Poisson Equations. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. The MOSFET device is under nonequilibrium condition with a source-drain bias up to 2V, and a gate potential close to the threshold potential. We find that all the intervalley couplings are small, with the coupling constants less than 3 meV. As a result, the system eigenstates derived from different bulk valleys can be calculated separately. This will significantly reduce the simulation time, because the diagonalization of the Hamiltonian matrix scales as the third power of the total number of basis functions.
Date: July 11, 2008
Creator: Wang, Lin-Wang; Deng, Hui-Xiong; Jiang, Xiang-Wei; Luo, Jun-Wei; Li, Shu-Shen; Xia, Jian-Bai et al.
Partner: UNT Libraries Government Documents Department

A fully 3D atomistic quantum mechanical study on random dopant induced effects in 25nm MOSFETs

Description: We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled Schroedinger equation and Poisson equation approach. Empirical pseudopotential is used to represent the single particle Hamiltonian and linear combination of bulk band (LCBB) method is used to solve the million atom Schroedinger's equation. We studied gate threshold fluctuations and threshold lowering due to the discrete dopant configurations. We compared our results with semiclassical simulation results. We found quantum mechanical effects increase the threshold fluctuation while decreases the threshold lowering. The increase of threshold fluctuation is in agreement with previous study based on approximated density gradient approach to represent the quantum mechanical effect. However, the decrease in threshold lowering is in contrast with the previous density gradient calculations.
Date: July 11, 2008
Creator: Wang, Lin-Wang; Jiang, Xiang-Wei; Deng, Hui-Xiong; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang et al.
Partner: UNT Libraries Government Documents Department

Towards bulk based preconditioning for quantum dotcomputations

Description: This article describes how to accelerate the convergence of Preconditioned Conjugate Gradient (PCG) type eigensolvers for the computation of several states around the band gap of colloidal quantum dots. Our new approach uses the Hamiltonian from the bulk materials constituent for the quantum dot to design an efficient preconditioner for the folded spectrum PCG method. The technique described shows promising results when applied to CdSe quantum dot model problems. We show a decrease in the number of iteration steps by at least a factor of 4 compared to the previously used diagonal preconditioner.
Date: May 25, 2006
Creator: Dongarra, Jack; Langou, Julien; Tomov, Stanimire; Channing,Andrew; Marques, Osni; Vomel, Christof et al.
Partner: UNT Libraries Government Documents Department

Electronic structure of disordered conjugated polymers: Polythiophenes

Description: Electronic structure of disordered semiconducting conjugated polymers was studied. Atomic structure was found from a classical molecular dynamics simulation and the charge patching method was used to calculate the electronic structure with the accuracy similar to the one of density functional theory in local density approximation. The total density of states, the local density of states at different points in the system and the wavefunctions of several states around the gap were calculated in the case of poly(3-hexylthiophene) (P3HT) and polythiophene (PT) systems to gain insight into the origin of disorder in the system, the degree of carrier localization and the role of chain interactions. The results indicated that disorder in the electronic structure of alkyl substituted polythiophenes comes from disorder in the conformation of individualchains, while in the case of polythiophene there is an additional contribution due to disorder in the electronic coupling between the chains. Each of the first several wavefunctions in the conduction and valence band of P3HT is localized over several rings of a single chain. It was shown that the localization can be caused in principle both by ring torsions and chain bending, however the effect of ring torsions is much stronger. PT wavefunctions are more complicated due to larger interchain electronic coupling and are not necessarily localized on a single chain.
Date: November 26, 2008
Creator: Vukmirovic, Nenad & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Effects of d-electrons in pseudopotential screened-exchange density functional calculations

Description: We report a theoretical study on the role of shallow d states in the screened-exchange local density approximation (sX-LDA) band structure of binary semiconductor systems.We found that inaccurate pseudo-wavefunctions can lead to 1) an overestimation of the screened-exchange interaction betweenthe localized d states and the delocalized higher energy s and p states and 2) an underestimation of the screened-exchange interaction between the d states. The resulting sX-LDA band structures have substantially smaller band gaps compared with experiments. We correct the pseudo-wavefunctions of d states by including the semicore s and p states of the same shell in the valence states. The correction of pseudo-wavefunctions yields band gaps and d state binding energies in good agreement with experiments and the full potential linearized augmented plane wave sX-LDA calculations. Compared with the quasi-particle GW method, our sX-LDA results shows not only similar quality on the band gaps but also much better d state binding energies. Combined with its capability of ground state structure calculation, the sX-LDA is expected to be a valuable theoretical tool for the II-VI and III-V (especially the III-N) bulk semiconductors and nanostructure studies.
Date: September 12, 2007
Creator: Lee, Byounghak; Canning, Andrew & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

A Linear Scaling Three Dimensional Fragment Method for Large ScaleElectronic Structure Calculations

Description: We present a novel linear scaling ab initio total energyelectronic structure calculation method, which is simple to implement,easily to parallelize, and produces essentially thesame results as thedirect ab initio method, while it could be thousands of times faster.Using this method, we have studied the dipole moments of CdSe quantumdots, and found both significant bulk and surface contributions. The bulkdipole contribution cannot simply be estimated from the bulk spontaneouspolarization value by a proportional volume factor. Instead it has ageometry dependent screening effect. The dipole moment also produces astrong internal electric field which induces a strong electron holeseparation.
Date: July 26, 2007
Creator: Wang, Lin-Wang; Zhao, Zhengji & Meza, Juan
Partner: UNT Libraries Government Documents Department

Localized Electron States Near a Metal-SemiconductorNanocontact

Description: The electronic structure of nanowires in contact withmetallic electrodes of experimentally relevant sizes is calculated byincorporating the electrostatic polarization potential into the atomisticsingle particle Schrodinger equation. We show that the presence of anelectrode produces localized electron/hole states near the electrode, aphenomenon only exhibited in nanostructures and overlooked in the past.This phenomenon will have profound implications on electron transport insuch nanosystems. We calculate several electrode/nanowire geometries,with varying contact depths and nanowire radii. We demonstrate the changein the band gap of up to 0.5 eV in 3 nm diameter CdSe nanowires andcalculate the magnitude of the applied electric field necessary toovercome the localization.
Date: April 25, 2007
Creator: Demchenko, Denis O. & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Mechanical and electronic-structure properties of compressed CdSetetrapod nanocrystals

Description: The coupling of mechanical and optical properties insemiconductor nanostructures can potentially lead to new types ofdevices. This work describes our theoretical examination of themechanical properties of CdSe tetrapods under directional forces, such asmay be induced by AFM tips. In addition to studying the general behaviorof the mechanical properties under modifications of geometry,nanocrystal-substrate interaction, and dimensional scaling, ourcalculations indicate that mechanical deformations do not lead to largechanges in the band-edge state eigenenergies, and have only a weak effecton the oscillator strengths of the lowest energy transitions.
Date: January 18, 2007
Creator: Schrier, Joshua; Lee, Byounghak & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Nonlocal exchange correlation in screened-exchange densityfunctional methods

Description: We present a systematic study on the exchange-correlationeffects in screened-exchange local density functional method. Toinvestigate the effects of the screened-exchange potential in the bandgap correction, we have compared the exchange-correlation potential termin the sX-LDA formalism with the self-energy term in the GWapproximation. It is found that the band gap correction of the sX-LDAmethod primarily comes from the downshift of valence band states,resulting from the enhancement of bonding and the increase of ionizationenergy. The band gap correction in the GW method, on the contrary, comesin large part from the increase of theconduction band energies. We alsostudied the effects of the screened-exchange potential in the totalenergy by investigating the exchange-correlation hole in comparison withquantum Monte Carlo calculations. When the Thomas-Fermi screening isused, the sX-LDA method overestimates (underestimates) theexchange-correlation hole in short (long) range. From theexchange-correlation energy analysis we found that the LDA method yieldsbetter absolute total energy than sX-LDA method.
Date: April 22, 2007
Creator: Lee, Byounghak; Wang, Lin-Wang; Spataru, Catalin D. & Louie,Steven G.
Partner: UNT Libraries Government Documents Department

A survey of codes and algorithms used in NERSC material scienceallocations

Description: We have carried out a survey of codes and algorithms used on NERSC computers within the science category of material science. This is part of the effort to track the usage of different algorithms in NERSC community. This survey is based on the data provided in the ERCAP application of FY06. To figure out the usage of each code in one account, we have multiplied the total high performance computer (HPC) time allocation (MPP hours) of this account with the percentage usage of this code as estimated by the users in the ERCAP application. This is not the actual usage time, but should be a good estimation of it, and it represents the intention of the users.
Date: June 1, 2006
Creator: Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Electronic structure of Calcium hexaborides

Description: We present a theoretical study of crystal and electronic structures of CaB6 within a screened-exchange local density approximation (sX-LDA). Our ab initio total energy calculations show that CaB6 is a semiconductor with a gap of >1.2 eV, in agreement with recent experimental observations. We show a very sensitive band gap dependence on the crystal internal parameter, which might partially explain the scatter of previous theoretical results. Our calculation demonstrates that it is essential to study this system simultaneously for both crystal structures and electronic properties, and that the sX-LDA provides an ideal method for this problem.
Date: June 15, 2005
Creator: Lee, Byounghak & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Band gap bowing and electron localization of (GaxIn1-x)N

Description: The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local density approximation (LDA)and screened-exchange local density functional (sX-LDA) methods. Thecalculated sX-LDA band gaps are in good agreement with the experimentallyobserved values, with errors of -0.26 and 0.09 eV for bulk GaN and InN,respectively. The LDA band gap errors are 1.33 and 0.81 eV for GaN andInN, in order. In contrast to the gap itself, the band gap bowingparameter is found to be very similar in sX-LDA and LDA. We identify thelocalization of hole states in GaxIn1-xN alloys along In-N-In chains. Thepredicted localizationis stronger in sX-LDA.
Date: May 9, 2006
Creator: Lee, Byounghak & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Motif based Hessian matrixfor ab initio geometry optimization ofnanostructures

Description: A simple method to estimate the atomic degree Hessian matrixof a nanosystem is presented. The estimated Hessian matrix, based on themotif decomposition of the nanosystem, can be used to accelerate abinitio atomic relaxations with speedups of 2 to 4 depending on the sizeof the system. In addition, the programing implementation for using thismethod in a standard ab initio package is trivial.
Date: April 5, 2006
Creator: Zhao, Zhengji; Wang, Lin-Wang & Meza, Juan
Partner: UNT Libraries Government Documents Department

A brief comparison between grid based real space algorithms andspectrum algorithms for electronic structure calculations

Description: Quantum mechanical ab initio calculation constitutes the biggest portion of the computer time in material science and chemical science simulations. As a computer center like NERSC, to better serve these communities, it will be very useful to have a prediction for the future trends of ab initio calculations in these areas. Such prediction can help us to decide what future computer architecture can be most useful for these communities, and what should be emphasized on in future supercomputer procurement. As the size of the computer and the size of the simulated physical systems increase, there is a renewed interest in using the real space grid method in electronic structure calculations. This is fueled by two factors. First, it is generally assumed that the real space grid method is more suitable for parallel computation for its limited communication requirement, compared with spectrum method where a global FFT is required. Second, as the size N of the calculated system increases together with the computer power, O(N) scaling approaches become more favorable than the traditional direct O(N{sup 3}) scaling methods. These O(N) methods are usually based on localized orbital in real space, which can be described more naturally by the real space basis. In this report, the author compares the real space methods versus the traditional plane wave (PW) spectrum methods, for their technical pros and cons, and the possible of future trends. For the real space method, the author focuses on the regular grid finite different (FD) method and the finite element (FE) method. These are the methods used mostly in material science simulation. As for chemical science, the predominant methods are still Gaussian basis method, and sometime the atomic orbital basis method. These two basis sets are localized in real space, and there is no indication that their roles in quantum ...
Date: December 1, 2006
Creator: Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Electronic Structure of zinc-blende AlxGa1-xN; Screened-ExchangeStudy

Description: We present a first principle investigation of the electronicstructure and the band gap bowing parameter of zinc-blende \AlGaN usingboth local density approximation and screened-exchange density functionalmethod. The calculated sX-LDA band gaps for GaN and AlN are 95 percentand 90 percent of the experimentally observed values, respectively, whileLDA under estimates the gaps to 62 percent and 70 percent. In contrast tothe gap itself, the band gap bowing parameter is found to be very similarin sX-LDA and LDA. Because of the difference in the conduction bandstructure, the direct to indirect band gap crossover is predicted tooccur at different Al concentration.
Date: January 3, 2006
Creator: Lee, Byounghak & Wang, Lin-Wang
Partner: UNT Libraries Government Documents Department

Single particle wavefunction localizations in bulged CdSenanowires

Description: Using atomistic empirical pseudopotentials, we havecalculated the electronic structures of CdSe nanowires with a bulgedarea. The localized state wavefunctions and their binding energies arecalculated, and their dependences on the bulged area shape are analyzed.We find that both the binding energy and the wavefunction localizationstrongly depend on the bulged area shape, with the most compact shapeproduces the largest binding energy and strongest wavefunctionlocalization. We also find that the top of the valence band state has aweaker localization than the bottom of the conduction band state due toan effective mass anisotropy.
Date: July 2, 2006
Creator: Zhao, Zhengji; Wang, Lin-Wang & Wu, Fengmin
Partner: UNT Libraries Government Documents Department

PetaScale calculations of the electronic structures ofnanostructures with hundreds of thousands of processors

Description: Density functional theory (DFT) is the most widely used ab initio method in material simulations. It accounts for 75% of the NERSC allocation time in the material science category. The DFT can be used to calculate the electronic structure, the charge density, the total energy and the atomic forces of a material system. With the advance of the HPC power and new algorithms, DFT can now be used to study thousand atom systems in some limited ways (e.g, a single selfconsistent calculation without atomic relaxation). But there are many problems which either requires much larger systems (e.g, >100,000 atoms), or many total energy calculation steps (e.g. for molecular dynamics or atomic relaxations). Examples include: grain boundary, dislocation energies and atomic structures, impurity transport and clustering in semiconductors, nanostructure growth, electronic structures of nanostructures and their internal electric fields. Due to the O(N{sup 3}) scaling of the conventional DFT algorithms (as implemented in codes like Qbox, Paratec, Petots), these problems are beyond the reach even for petascale computers. As the proposed petascale computers might have millions of processors, new computational paradigms and algorithms are needed to solve the above large scale problems. In particular, O(N) scaling algorithms with parallelization capability up to millions of processors are needed. For a large material science problem, a natural approach to achieve this goal is by divide-and-conquer method: to spatially divide the system into many small pieces, and solve each piece by a small local group of processors. This solves the O(N) scaling and the parallelization problem at the same time. However, the challenge of this approach is for how to divide the system into small pieces and how to patch them up without the trace of the spatial division. Here, we present a linear scaling 3 dimensional fragment (LS3DF) method which uses a novel ...
Date: April 1, 2006
Creator: Wang, Lin-Wang; Zhao, Zhengji & Meza, Juan
Partner: UNT Libraries Government Documents Department