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The cosmic microwave background after MAXIMA and BOOMERANG

Description: The first release of data from the MAXIMA and BOOMERANG experiments has introduced a new era of precision cosmology. The two data sets are essentially independent, consistent and complementary. In a joint effort by the two teams, the two data sets were combined and then used to test cosmological models and determine values of cosmological constants. These results are available because of the success of bolometric detection techniques. The experimental approach is described with references to the MAXIMA-1 experiment. Important new cosmological experiments at far infrared and millimeter wavelengths require major improvements in bolometric techniques. A new technology, the voltage-biased superconducting bolometer, promises to provide the required experimental power.
Date: December 1, 2000
Creator: Richards, Paul L.
Partner: UNT Libraries Government Documents Department

Antenna-coupled arrays of voltage-biased superconducting bolometers

Description: We report on the development of antenna-coupled Voltage-biased Superconducting Bolometers (VSBs) which use Transition-edge Sensors (TES). Antenna coupling can greatly simplify the fabrication of large multi-frequency bolometer arrays compared to horn-coupled techniques. This simplification can make it practical to implement 1000+ element arrays that fill the focal plane of mm/sub-mm wave telescopes. We have designed a prototype device with a double-slot dipole antenna, integrated band-defining filters, and a membrane-suspended bolometer. A test chip has been constructed and will be tested shortly.
Date: July 23, 2001
Creator: Myers, Michael J.; Lee, Adrian T.; Richards, P.L.; Schwan, D.; Skidmore, J.T.; Smith, A.D. et al.
Partner: UNT Libraries Government Documents Department

Effects of annealing on self-assembled InAs quantum dots and wetting layer in GaAs matrix

Description: Post-growth thermal annealing effects on InAs/GaAs quantum dots (QDs) near Stransky-Krastanow transformation were investigated. Self-assembled QDs of average size of about 10 nm were grown by metal-organic vapor phase epitaxy. The photoluminescence (PL) due to emission from QDs as well as two peaks due to emission from the strained InAs wetting layer (WL) were observed in as-grown samples. Bimodal structure of the WL PL was attributed to WL regions of different thickness. There was almost no difference in the PL spectrum after 30 s annealing at 600 C. However, annealing at temperatures in the range between 700 C and 950 C resulted in quenching of the PL from QDs and the thinner WL. The PL peak from the new, thicker WL blue-shifted and narrowed with increasing annealing temperature. This behavior was in agreement with TEM observations. Complete dissolution of the QDs and substantial broadening of the WL was observed. All our results indicate that thermally induced modifications of the WL rather than QDs can be responsible for the blue-shift and narrowing of the PL peaks in structures containing InAs QDs.
Date: April 18, 2001
Creator: Jasinski, J.; Babinski, A.; Bozek, R.; Szepielow, A. & Baranowski, J.M.
Partner: UNT Libraries Government Documents Department

Effects of annealing on self-assembled InAs quantum dots and wetting layer in GaAs matrix

Description: Post-growth thermal annealing effects on InAs/GaAs quantum dots (QDs) near Stransky-Krastanow transformation were investigated. Self-assembled QDs of average size of about 10 nm were grown by metal organic vapour phase epitaxy. The photoluminescence (PL) due to emission from QDs as well as two peaks due to emission from the strained InAs wetting layer (WL) were observed in as-grown samples. Bimodal structure of the WL PL was attributed to WL regions of different thickness. There was almost no difference in the PL spectrum after 30 s annealing at 600 C. However, annealing at temperatures in the range between 700 C and 950 C resulted in quenching of the PL from QDs and the thinner WL. The PL peak from the new, thicker WL blue-shifted and narrowed with increasing annealing temperature. This behavior was in agreement with TEM observations. Complete dissolution of the QDs and substantial broadening of the WL was observed. All our results indicate that thermally induced modifications of the WL rather than QDs can be responsible for the blue-shift and narrowing of the PL peaks in structures containing InAs QDs.
Date: April 18, 2001
Creator: Jasinski, J.; Babinski, A.; Bozek, R.; Szepielow, A. & Baranowski, J.M.
Partner: UNT Libraries Government Documents Department

New technologies for the detection of millimeter and submillimeter waves

Description: Voltage-biased superconducting bolometers have many operational advantages over conventional bolometer technology including sensitivity, linearity, speed, and immunity from environmental disturbance. A review is given of the Berkeley program for developing this new technology. Developments include fully lithographed individual bolometers in the spiderweb configuration, arrays of 1024 close-packed absorber-coupled bolometers, antenna-coupled bolometers, and a frequency-domain SQUID readout multiplexer.
Date: September 20, 2001
Creator: Richards, P.L.; Clarke, J.; Gildemeister, J.M.; Lanting, T.; Lee, A.T.; Myers, M.J. et al.
Partner: UNT Libraries Government Documents Department

Influence of Mg and In on defect formation in GaN; bulk and MOCVD grown samples

Description: Transmission electron microscopy studies were applied to study GaN crystals doped with Mg. Both: bulk GaN:Mg crystals grown by a high pressure and high temperature process and those grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering (formation of polytypoids) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects with base on the basal planes and with walls inclined about 45O to these planes, empty inside (pinholes) were observed. A high concentration of these pyramidal defects was also observed in the MOCVD grown crystals. For samples grown with Mg delta doping planar defects were also observed especially at the early stages of growth followed by formation of pyramidal defects. TEM and x-ray studies of InxGa{sub 1{minus}x}N crystals for the range of 28-45% nominal In concentration shows formation of two sub-layers: strained and relaxed, with a much lower In concentration in the strained layer. Layers with the highest In concentration were fully relaxed.
Date: November 22, 2000
Creator: Liliental-Weber, Z.; Benamara, M.; Jasinski, J.; Swider, W.; Washburn, J.; Grzegory, I. et al.
Partner: UNT Libraries Government Documents Department