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Progress Report for October 1947, Physics Section

Description: This summary discusses the following topics: (1) 184-inch cyclotron program; (2) a 60-inch cyclotron program; (3) synchrotron program; (4) Linear accelerator program; (5) Experimental physics, experiments with the 184-inch cyclotron, fast neutron scattering, and neutron-proton scattering; (6) Theoretical physics; and (7) isotope research program.
Date: October 1, 1947
Creator: Brobeck, W. M.; Hamilton, J. G.; Martin, M.; Alvarez, L. W.; Thornton, R. L.; Serber, R. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

Description: The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-fr… more
Date: August 5, 1999
Creator: Baca, A. G.; Brown, D. J.; Donaldson, R. D.; Helgeson, W. D.; Hjalmarson, H. P.; Loubriel, G. M. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

Description: The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itsel… more
Date: December 17, 1999
Creator: Mar,Alan; Loubriel,Guillermo M.; Zutavern,Fred J.; O'Malley,Martin W.; Helgeson,Wesley D.; Brown,Darwin James et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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