Search Results

Advanced search parameters have been applied.
open access

A new MBE CdTe photoconductor array detector for X-ray applications

Description: A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 {micro}m FWHM using a 50 {micro}m synchrotron x-ray beam. A substanti… more
Date: October 1, 1994
Creator: Yoo, S. S.; Sivananthan, S.; Faurie, J. P.; Rodricks, B.; Bai, J. & Montano, P. A.
Partner: UNT Libraries Government Documents Department
open access

Direct observations of atomic structures of defects in GaN by high-resolution Z-contrast STEM

Description: GaN/(0001) Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {l_brace}10-10{r_brace} surface. The surfaces of the nanopipe walls are on {l_brace}10-10{r_brace} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z contrast image of the prism… more
Date: December 1, 1997
Creator: Xin, Y.; Pennycook, S. J.; Browning, N. D.; Sivananthan, S.; Nellist, P. D.; Faurie, J. P. et al.
Partner: UNT Libraries Government Documents Department
open access

Direct observation of threading dislocations in GaN by high-resolution Z-contrast imaging

Description: Wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers. One interesting issue concerning GaN is that the material is relatively insensitive to the presence of a density of dislocations which is six orders of magnitude higher than that for III-V arsenide and phosphide based LEDs. Although it is well known that these dislocations originate at the film-substrate interface duri… more
Date: February 1, 1998
Creator: Xin, Y.; Browning, N. D.; Sivananthan, S.; Pennycook, S. J.; Nellist, P. D.; FAurie, J. P. et al.
Partner: UNT Libraries Government Documents Department
Back to Top of Screen