Barrier/Cu contact resistivity
Description:
The specific contact resistivity of Cu with ({alpha} + {beta})-Ta, TiN, {alpha}-W, and amorphous-Ta{sub 36}Si{sub 14}N{sub 50} barrier films is measured using a novel four-point-probe approach. Geometrically, the test structures consist of colinear sets of W-plugs to act as current and voltage probes that contact the bottom of a planar Cu/barrier/Cu stack. Underlying Al interconnects link the plugs to the current source and voltmeter. The center-to-center distance of the probes ranges from 3 to…
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Date:
October 17, 1995
Creator:
Reid, J.S.; Nicolet, M.A.; Angyal, M.S.; Lilienfeld, D.; Shacham-Diamand, Y. & Smith, P.M.
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Partner:
UNT Libraries Government Documents Department