Pressure dependence of the bandgap energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum-well
Description:
We report the measurement of the pressure dependence for the bandgap energy E{sub g} and conduction-band mass m{sub c} for an 80{angstrom}-wide n-type In{sub 0.20}Ga{sub 0.80}As/GaAs single strained quantum well at 4.2K for pressures between 0 and 35 kbar and fields up to 30 tesla.
Date:
July 7, 1997
Creator:
Jones, E. D.; Tozer, S. T. & Schmiedel, T.
Item Type:
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