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Pressure dependence of the bandgap energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum-well

Description: We report the measurement of the pressure dependence for the bandgap energy E{sub g} and conduction-band mass m{sub c} for an 80{angstrom}-wide n-type In{sub 0.20}Ga{sub 0.80}As/GaAs single strained quantum well at 4.2K for pressures between 0 and 35 kbar and fields up to 30 tesla.
Date: July 7, 1997
Creator: Jones, E. D.; Tozer, S. T. & Schmiedel, T.
Partner: UNT Libraries Government Documents Department
open access

Bandgap renormalization: GaAs/AlGaAs quantum wells

Description: Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4K and for magnetic fields up to 30T. The 2D- carrier densities varied between 1 and 12 x 10(11) cm(-2). At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.
Date: January 1, 1998
Creator: Jones, E. D.; Blount, M.; Chow, W.; Hou, H.; Simmons, J. A.; Kim, Yongmin et al.
Partner: UNT Libraries Government Documents Department
open access

High hydrostatic pressure effects on the exciton spin states in CdTe/Cd{sub 1-x}Mn{sub x}Te single quantum wells

Description: Photoluminescence (PL) was measured in a CdTe/Cd{sub 0.76}Mn{sub 0. 24}Te single quantum well structure under hydrostatic pressure up to 2.68 GPa and magnetic fields up to 30 T at 4.2 K. Pressure coefficients of exciton energies were found to be well width dependent. Magneto-PL experiments revealed negative pressure dependence of N{sub 0}({alpha}-{beta}) in barriers and saturation of T{sub 0} by the pressure.
Date: October 1, 1996
Creator: Yokoi, H.; Kakudate, Y.; Schmiedel, T.; Tozer, S.; Jones, E. D.; Takeyama, S. et al.
Partner: UNT Libraries Government Documents Department
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