Description: This report describes the improvement in the performance and the manufacturing yield of mercuric iodide detectors achieved by identifying the dominant impurities, carrier traps, and processing steps limiting device performance. Theoretical studies of electron and hole transport in this material set fundamental limits on detector performance and provided a standard against which to compare experimental results. Spectroscopy techniques including low temperature photoluminescence and thermally stimulated current spectroscopy were applied to characterize the deep level traps in this material. Traps and defects that can be introduced into the detector during growth, from the contact, and during the various steps in detector fabrication were identified. Trap energy levels and their relative abundances were determined. Variations in material quality and detector performance at the micron scale were investigated to understand the distribution in electric field in large volume detectors suitable for gamma-ray spectroscopy. Surface aging and contact degradation was studied extensively by techniques including atomic force microscopy, transmission electron microscopy, and variable angle spectroscopic ellipsometry. Preferred handling and processing procedures for maximizing detector performance and yield were established. The manufacturing yield of high resolution gamma-ray detectors was improved from a few percent to more than 30%.
Date: September 1, 1996
Creator: James, R.B.; Anderson, R.J. & Schlesinger, T.E.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department