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in creator/contributor: "Rouleau, C. M."  
Results: 1 - 7
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Silicon and zinc telluride nanoparticles synthesized by pulsed laser ablation: Size distributions and nanoscale structure

Description: Size distributions of Si and ZnTe nanoparticles produced by low energy density ArF (193 nm) pulsed laser ablation into ambient gases were measured as a function of the gas pressure and target-substrate separation, D{sub ts}, using atomic force microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). For low energy density (Ed = 1.04 J/cm{sup 2}) ablation of Si into He at pressures of 0.5, 1.5, 4 and 10 torr, large nanoparticles were most numerous at D{sub ts} = 10 mm, with sma… more
Date: August 1, 1997
Creator: Lowndes, D.H.; Rouleau, C.M. & Duscher, G.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Study of substrate diffusion in epitaxial n-type CdSe films grown on GaAs (001) by pulsed laser ablation

Description: N-type CdSe films with thicknesses of 470--630 nm were grown on (001) and 2{degree}-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (T{sub p}) of 250--425 C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films g… more
Date: April 1, 1998
Creator: Park, J.; Rouleau, C.M. & Lowndes, D.H.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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AnGa{sub 2}O{sub 4} Thin-Film Phosphors Grown by Pulsed Laser Ablation

Description: The growth and properties of undoped and Mn-doped ZnGa{sub 2}O{sub 4} thin-film phosphors on (100) MgO and glass substrates using pulsed laser ablation were investigated. Blue-white and green emission were observed for as-deposited undoped and Mn-doped films, respectively. Luminescent properties as well as crystallinity were considerably affected by processing conditions and film stoichiometry. Films with enhanced luminescent characteristics were obtained on single crystal substrates without po… more
Date: April 5, 1999
Creator: Lee, Y. E.; Rouleau, C. M.; Park, C. & Norton, D. P.
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Partner: UNT Libraries Government Documents Department
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Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation

Description: Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) and unintentionally doped (p-type) GaSb (001) substrates by pulsed KrF (248 nm) excimer laser ablation of a ZnTe target through an N{sub 2} ambient, without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range have been obtained. This appears to be the first time that any wide band gap (E{sub g} {ge} 2 eV) II-VI compound (or… more
Date: June 1, 1995
Creator: Lowndes, D. H.; Rouleau, C. M.; Budai, J. D.; Geohegan, D. B. & McCamy, J. W.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen

Description: Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N{sub 2} ambient without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range were obtained for a range of nitrogen pressures The maximum hole concentration equals the highest hole doping reported to date for any wide band gap II-VI co… more
Date: April 1, 1995
Creator: Lowndes, D. H.; Rouleau, C. M.; Budai, J. D.; Poker, D. B.; Geohegan, D. B.; Zhu, Shen et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Effect of ambient gas pressure on pulsed laser ablation plume dynamics and ZnTe film growth

Description: Epitaxial thin films of nitrogen-doped p-ZnTe were grown on single-crystal, semi-insulating Ga-As substrates via pulsed laser ablation of a stoichiometric ZnTe target. Both low pressure nitrogen ambients and high vacuum were used. Results of in situ reflection high energy electron diffraction (RHEED) and time-resolved ion probe measurements have been compared with ex situ Hall effect and transmission electron microscopy (TEM) measurements. A strong correlation was observed between the nature of… more
Date: December 1, 1995
Creator: Rouleau, C. M.; Lowndes, D. H.; Geohegan, D. B.; Allard, L. F.; Strauss, M. A.; Cao, S. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Pulsed laser ablation growth and doping of epitaxial compound semiconductor films

Description: Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound … more
Date: December 1995
Creator: Lowndes, D. H.; Rouleau, C. M.; Geohegan, D. B.; Budai, J. D.; Poker, D. B.; Puretzky, A. A. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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